ISC BDT65BF Isc silicon npn darlington power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector Current -IC= 12A
·High DC Current Gain-hFE= 1000(Min)@ IC= 5A
·Complement to Type BDT64F/AF/BF/CF
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCER
VCEO
VEBO
PARAMETER
Collector-Emitter
Voltage
Collector-Emitter
Voltage
VALUE
BDT65F
60
BDT65AF
80
BDT65BF
100
BDT65CF
120
BDT65F
60
BDT65AF
80
BDT65BF
100
BDT65CF
120
UNIT
V
V
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
0.5
A
PC
Collector Power Dissipation
@ TC=25℃
39
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
5.7
℃/W
isc Website:www.iscsemi.cn
BDT65F/AF/BF/CF
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BDT65F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT65F
V(BR)CEO
Collector-Emitter
Breakdown Voltage
MIN
TYP.
MAX
UNIT
60
BDT65AF
80
IC= 30mA ;IB=0
V
B
BDT65BF
100
BDT65CF
120
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 20mA
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 100mA
3.0
V
Base-Emitter On Voltage
IC= 5A ; VCE= 4V
2.5
V
VECF
C-E Diode Forward Voltage
IF= 5A
2.0
V
ICEO
Collector Cutoff Current
VCE= 1/2VCEOmax; IB= 0
1
mA
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0;TC= 150℃
0.4
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
hFE-3
DC Current Gain
IC= 12A ; VCE= 4V
1500
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest=1MHz
200
VBE(on)
B
1500
1000
pF
Switching times
ton
Turn-On Time
toff
Turn-Off Time
isc Website:www.iscsemi.cn
IC= 5A; IB1= -IB2= 20mA;
VCC= 30V
2
1
2.5
μs
6
10
μs
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