NPN MJ4033 – MJ4034 – MJ4035 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS They are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use as output devices in complementary general purpose amplifier applications. The complementary PNP types are the MJ4030, MJ4031, MJ4032. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage IE=0 VCEO Collector-EmitterVoltage IB=0 VEBO Emitter-Base Voltage IC=0 IC IB PT TJ Collector Current Base Current Power Dissipation Junction Temperature Ts Storage Temperature Value MJ4033 MJ4034 MJ4035 MJ4033 MJ4034 MJ4035 MJ4033 MJ4034 MJ4035 @ TC < 25° 60 80 100 60 80 100 Unit V V 5.0 V 16 0.5 150 200 A A W -65 to +200 °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 29/10/2012 COMSET SEMICONDUCTORS Value Unit 1.17 °C/W 1|3 NPN MJ4033 – MJ4034 – MJ4035 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCEO Collector-Emitter Voltage (*) IC=100 mA, IB=0 ICEO Collector Cutoff Current VCE=30 Vdc, IB=0 VCE=40 Vdc, IB=0 VCE=50 V, IB=0 IEBO Emitter Cutoff Current VBE=5.0 V, IC=0 Collector-Emitter Leakage Current VCB=60 V RBE=1.0 kΩ VCB=80 V RBE=1.0 kΩ VCB=100 V RBE=1.0 kΩ VCB=60 V RBE=1.0 kΩ TC=150°C VCB=80 V RBE=1.0 kΩ TC=150°C VCB=100 V RBE=1.0 kΩ TC=150°C ICER VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A IB=40 mA IC=16 A IB=80 mA VBE Base-Emitter Voltage (*) IC=10 A VCE=3.0V hFE DC Current Gain (*) VCE=10 V IC=3.0 A Min Typ Max Unit MJ4033 MJ4034 MJ4035 MJ4033 MJ4034 MJ4035 MJ4033 MJ4034 MJ4035 60 80 100 - - - V - 3.0 mA - - 5.0 mA MJ4033 - - MJ4034 - - MJ4033 - - MJ4034 - - 5.0 - - 2.5 1.0 MJ4035 mAdc MJ4035 MJ4033 MJ4034 MJ4035 MJ4033 MJ4034 MJ4035 MJ4033 MJ4034 MJ4035 MJ4033 MJ4034 MJ4035 Vdc - - 4.0 - - 3 V 1000 - - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 29/10/2012 COMSET SEMICONDUCTORS 2|3 NPN MJ4033 – MJ4034 – MJ4035 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 29/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3