A67L93181/A67L83361 Preliminary 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 13, 2005 Preliminary (July, 2005, Version 0.0) AMIC Technology, Corp. A67L93181/A67L83361 Preliminary 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAM Features Fast access time: 6.5/7.5/8.5 ns (153, 133, 117 MHz) Zero Bus Latency between READ and WRITE cycles allows 100% bus utilization Signal +3.3V ± 5% power supply Individual Byte Write control capability Clock enable ( CEN ) pin to enable clock and suspend operations Clock-controlled and registered address, data and control signals Registered output for pipelined applications Three separate chip enables allow wide range of options for CE control, address pipelining Internally self-timed write cycle Selectable BURST mode (Linear or Interleaved) SLEEP mode (ZZ pin) provided Available in 100 pin LQFP package General Description The AMIC Zero Bus Latency (ZeBLTM) SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. The A67L93181, A67L83361 SRAMs integrate a 512K X 18, 256K X 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. These SRAMs are optimized for 100 percent bus utilization without the insertion of any wait cycles during Write-Read alternation. The positive edge triggered single clock input (CLK) controls all synchronous inputs passing through the registers. The synchronous inputs include all address, all data inputs, active low chip enable ( CE ), two additional chip enables for easy depth expansion (CE2, CE2 ), cycle start input (ADV/ LD ), synchronous clock enable ( CEN ), byte write enables ( BW1 , BW2 , BW3 , BW4 ) and read/write generated by the chip and controlled by the same input pin ADV/ LD in High state. Write cycles are internally self-time and synchronous with the rising edge of the clock input and when R/ W is Low. The feature simplified the write interface. Individual Byte enables allow individual bytes to be written. BW1 controls I/Oa pins; BW2 controls I/Ob pins; BW3 controls I/Oc pins; and BW4 controls I/Od pins. Cycle types can only be defined when an address is loaded. The SRAM operates from a +3.3V power supply, and all inputs and outputs are LVTTL-compatible. The device is ideally suited for high bandwidth utilization systems. (R/ W ). Asynchronous inputs include the output enable ( OE ), clock (CLK), SLEEP mode (ZZ, tied LOW if unused) and burst mode (MODE). Burst Mode can provide either interleaved or linear operation, burst operation can be initiated by synchronous address Advance/Load (ADV/ LD ) pin in Low state. Subsequent burst address can be internally PRELIMINARY (July, 2005, Version 0.0) 2 AMIC Technology, Corp. A67L93181/A67L83361 Pin Configuration OE ADV/ LD NC A17 A8 A9 VSS CLK R/W CEN OE ADV/ LD NC A18 A8 A9 90 89 88 87 86 84 83 82 81 85 CEN VCC 91 CLK R/W CE2 92 VSS BW1 93 VCC BW1 BW2 94 CE2 BW2 NC 95 BW3 BW4 NC 96 CE CE2 CE CE2 A7 99 97 A7 A6 100 512K X 18 98 A6 256K X 36 I/Oc8 NC 1 80 A10 I/Ob 8 I/Oc0 NC 2 79 NC I/Ob 7 I/Oc1 NC 3 78 NC I/Ob6 VCCQ VCCQ 4 77 VCCQ VCCQ VSSQ VSSQ 5 76 VSSQ VSSQ I/Oc2 NC 6 75 NC I/Ob5 I/Oc3 NC 7 74 I/Oa0 I/Ob4 I/Oc4 I/Ob8 8 73 I/Oa1 I/Ob3 9 72 I/Oa2 I/Ob2 I/Oc5 I/Ob7 VSSQ VSSQ 10 71 VSSQ VSSQ VCCQ VCCQ 11 70 VCCQ VCCQ I/Oc6 I/Ob6 12 69 I/Oa3 I/Ob1 I/Oc 7 I/Ob5 13 68 I/Oa4 I/Ob0 VSS VSS 14 67 VSS VSS VCC VCC 15 66 VSS VSS VCC VCC 16 65 VCC VCC VSS VSS 17 64 ZZ ZZ I/Od 0 I/Ob4 18 63 I/Oa5 I/Oa7 I/Od 1 I/Ob3 19 62 I/Oa6 I/Oa6 VCCQ VCCQ 20 61 VCCQ VCCQ VSSQ VSSQ 21 60 VSSQ VSSQ I/Od 2 I/Ob 2 22 59 I/Oa7 I/Oa5 I/Od 3 I/Ob 1 23 58 I/Oa8 I/Oa4 I/Od 4 I/Ob 0 24 57 NC I/Oa3 I/Od 5 NC 25 56 NC I/Oa2 A67L93181E A67L83361E (July, 2005, Version 0.0) 3 50 A17 A16 49 A16 A15 48 A15 A14 47 A14 A13 46 A13 A12 45 A12 A11 44 A11 A10 43 NC NC 42 NC 41 VCC NC VSS VSS VCC NC NC 40 A0 NC A0 NC MODE MODE PRELIMINARY 39 I/Oa8 38 NC 37 51 36 30 35 NC A1 I/Oa0 I/Od8 A2 I/Oa1 NC A1 NC 52 A2 53 29 34 28 NC A3 NC I/Od7 A3 I/Od6 33 VCCQ A4 VSSQ VCCQ A4 VSSQ 54 32 55 27 31 26 VCCQ A5 VSSQ A5 VSSQ VCCQ AMIC Technology, Corp. A67L93181/A67L83361 Block Diagram (256K X 36) ZZ MODE LOGIC MODE ADV/LD CLK LOGIC CEN CLK A0-A17 BURST LOGIC ADDRESS COUNTER CLR WRITE ADDRESS REGISTER ADDRESS REGISTERS 9 9 ADV/LD R/W BW1 BW2 BW3 BW4 WRITE REGISTRY & CONTROL LOGIC 9 9 BYTEa WRITE DRIVER 9 BYTEb WRITE DRIVER 9 256KX9X4 MEMORY BYTEc WRITE DRIVER 9 BYTEd WRITE DRIVER 9 SENSE AMPS OUTPUT BUFFERS I/O s ARRAY DATA-IN REGISTERS CE CHIP ENABLE LOGIC CE2 CE2 FLOW-THROUGH ENABLE LOGIC OUTPUT ENABLE LOGIC OE PRELIMINARY (July, 2005, Version 0.0) 4 AMIC Technology, Corp. A67L93181/A67L83361 Block Diagram (512K X 18) ZZ MODE LOGIC MODE ADV/LD CLK LOGIC CEN CLK A0- A18 BURST LOGIC ADDRESS COUNTER CLR WRITE ADDRESS REGISTER ADDRESS REGISTERS 9 ADV/LD R/W BW1 WRITE REGISTRY & CONTROL LOGIC BW2 BYTEa WRITE DRIVER 9 512KX9X2 MEMORY 9 BYTEb WRITE DRIVER 9 SENSE AMPS OUTPUT BUFFERS I/O S ARRAY DATA-IN REGISTERS CE CHIP ENABLE LOGIC CE2 CE2 FLOWTHROUGH ENABLE LOGIC OUTPUT ENABLE LOGIC OE PRELIMINARY (July, 2005, Version 0.0) 5 AMIC Technology, Corp. A67L93181/A67L83361 Pin Description Pin No. Symbol Description A0 A1 A2 – A9 Synchronous Address Inputs : These inputs are registered and must meet the setup and hold times around the rising edge of CLK. Pins 84 are reserved as address bits for higher-density 18Mb ZeBL SRAMs, respectively. A0 and A1 are the two lest significant bits (LSB) of the address field and set the internal burst counter if burst is desired. LQFP (X18) LQFP (X36) 37 36 35,34,33,32, 100,99,82,81 44,45,46,47, 48,49,50,83 80 37 36 35,34,33,32, 100,99,82,81 45,46,47,48, 49,50,83, 44 93 ( BW1) 94 ( BW2 ) 93 ( BW1) 94 ( BW2 ) 95 ( BW3 ) 96 ( BW4 ) BW1 BW2 BW3 89 89 CLK 98 98 CE Synchronous Chip Enable : This active low input is used to enable the device. This input is sampled only when a new external address is loaded (ADV/ LD LOW). 92 92 CE2 Synchronous Chip Enable : This active low input is used to enable the device and is sampled only when a new external address is loaded (ADV/ LD LOW). This input can be used for memory depth expansion. 97 97 CE2 Synchronous Chip Enable : This active high input is used to enable the device and is sampled only when a new external address is loaded (ADV/ LD LOW). This input can be used for memory depth expansion. 86 86 OE Output Enable : This active low asynchronous input enables the data I/O output drivers. 85 85 ADV/ LD Synchronous Address Advance/Load : When HIGH, this input is used to advance the internal burst counter, controlling burst access after the external address is loaded. When HIGH, R/ W is ignored. A LOW on this pin permits a new address to be loaded at CLK rising edge. 87 87 CEN Synchronous Clock Enable : This active low input permits CLK to propagate throughout the device. When HIGH, the device ignores the CLK input and effectively internally extends the previous CLK cycle. This input must meet setup and hold times around the rising edge of CLK. PRELIMINARY (July, 2005, Version 0.0) A11-A18 A10 BW4 Synchronous Byte Write Enables : These active low inputs allow individual bytes to be written when a WRITE cycle is active and must meet the setup and hold times around the rising edge of CLK. BYTE WRITEs need to be asserted on the same cycle as the address, BWs are associated with addresses and apply to subsequent data. BW1 controls I/Oa pins; BW2 controls I/Ob pins; BW3 controls I/Oc pins; BW4 controls I/Od pins. Clock : This signal registers the address, data, chip enables, byte write enables and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock’s rising edge. 6 AMIC Technology, Corp. A67L93181/A67L83361 Pin Description (continued) Pin No. Symbol Description LQFP (X18) LQFP (X36) 64 64 ZZ Snooze Enable : This active high asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. When active, all other inputs are ignored. 88 88 R/ W Read/Write : This active input determines the cycle type when ADV/ LD is LOW. This is the only means for determining READs and WRITEs. READ cycles may not be converted into WRITEs (and vice versa) other than by loading a new address. A LOW on this pin permits BYTE WRITE operations and must meet the setup and hold times around the rising edge of CLK. Full bus width WRITEs occur if all byte write enables are LOW. 52, 53, 56, 57, 58, 59, 62, 63, 51 68, 69, 72, 73, 74, 75, 78, 79, 80 2, 3, 6, 7, 8, 9, 12, 13,1 18, 19, 22, 23, 24, 25, 28, 29, 30 I/Oa SRAM Data I/O : Byte “a” is I/Oa pins; Byte “b” is I/Ob pins; Byte “c” is I/Oc pins; Byte “d” is I/Od pins. Input data must meet setup and hold times around CLK rising edge. 31 31 MODE Mode: This input selects the burst sequence. A LOW on this pin selects linear burst. NC or HIGH on this pin selects interleaved burst. Do not alter input state while device is operating. 1, 2, 3, 6, 7, 25, 28, 29, 30, 38, 39, 42,43 51, 52, 53, 56, 57, 75, 78, 79, 95, 96 38,39,42,43 NC No Connect : These pins can be left floating or connected to GND to minimize thermal impedance. 15, 16, 41, 65, 91 15, 16, 41, 65, 91 VCC 4, 11, 20, 27, 54, 61, 70, 77 4, 11, 20, 27, 54, 61, 70, 77 VCCQ 14, 17, 40, 66, 90 14, 17, 40, 66, 90 VSS 5,10,21,26, 55,60,71,76 5,10,21,26, 55,60,71,76 VSSQ 74, 73, 72, 69, 68 63, 62, 59, 58 24, 23, 22, 19, 18 13, 12, 9, 8 PRELIMINARY (July, 2005, Version 0.0) I/Ob I/Oc I/Od Power Supply Isolated Output Buffer Supply Ground : GND. Isolated Output Buffer Ground 7 AMIC Technology, Corp. A67L93181/A67L83361 Truth Table (Notes 5 - 7) Operation Address Used None CE CE2 CE2 ZZ ADV/ LD L R/ W BWx OE CEN CLK I/O Notes Deselected Cycle, H X X L X X X L L→H High-Z Power-down Deselected Cycle, None X H X L L X X X L L→H High-Z Power-down Deselected Cycle, None X X L L L X X X L L→H High-Z Power-down Continue Deselect None X X X L H X X X L L→H High-Z 1 Cycle READ Cycle External L L H L L H X L L L→H Q (Begin Burst) READ Cycle Next X X X L H X X L L L→H Q 1,7 (Continue Burst) NOP/Dummy READ External L L H L L H X H L L→H High-Z 2 (Begin Burst) Dummy READ Next X X X L H X X H L L→H High-Z 1,2,7 (Continue Burst) WRITE Cycle External L L H L L L L X L L→H D 3 (Begin Burst) WRITE Cycle Next X X X L H X L X L L→H D 1,3,7 (Continue Burst) NOP/WRITE Abort None L L H L L L H X L L→H High-Z 2,3 (Begin Burst) WRITE Abort Next X X X L H X H X L L→H High-Z 1,2,3,7 (Continue Burst) IGNORE Clock Edge Current X X X L X X X X H L→ H 4 (Stall) SLEEP Mode None X X X H X X X X X X High-Z Notes: 1. Continue Burst cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or WRITE) is chosen in the initial Begin Burst cycle. A Continue Deselect cycle can only be entered if a Deselect cycle is executed first. 2. Dummy READ and WRITE Abort cycles can be considered NOPs because the device performs no operation. A WRITE Abort means a WRITE command is given, but no operation is performed. 3. OE may be wired LOW to minimize the number of control signals to the SRAM. The device will automatically turn off the output drivers during a WRITE cycle. Some users may use OE when the bus turn-on and turn-off times do not meet their requirements. 4. If an Ignore Clock Edge command occurs during a READ operation, the I/O bus will remain active (Low-Z). If it occurs during a WRITE cycle, the bus will remain in High-Z. No WRITE operations will be performed during the Ignored Clock Edge cycle. 5. X means “Don’t Care.” H means logic HIGH. L means logic LOW. BWx = H means all byte write signals ( BW1, BW2 , BW3 and BW4 ) are HIGH. BWx = L means one or more byte write signals are LOW. 6. BW1enables WRITEs to Byte “a” (I/Oa pins); BW2 enables WRITEs to Byte “b” (I/Ob pins); BW3 enables WRITEs to Byte “c” (I/Oc pins); BW4 enables WRITEs to Byte “d” (I/Od pins). 7. The address counter is incremented for all Continue Burst cycles. PRELIMINARY (July, 2005, Version 0.0) 8 AMIC Technology, Corp. A67L93181/A67L83361 Partial Truth Table for READ/WRITE Commands (X18) Operation R/ W BW1 BW2 READ H X X WRITE Byte “a” L L H WRITE Byte “b” L H L WRITE all bytes L L L WRITE Abort/NOP L H H Note : Using R/ W and BYTE WRITE(s), any one or more bytes may be written. Partial Truth Table for READ/WRITE Commands (X36) Operation R/ W BW1 BW2 BW3 BW4 READ H X X X X WRITE Byte “a” L L H H H WRITE Byte “b” L H L H H WRITE Byte “c” L H H L H WRITE Byte “d” L H H H L WRITE all bytes L L L L L WRITE Abort/NOP L H H H H Note : Using R/ W and BYTE WRITE(s), any one or more bytes may be written. Linear Burst Address Table (MODE = LOW) First Address (External) Second Address (Internal) Third Address (Internal) Fourth Address (Internal) X . . . X00 X . . . X01 X . . . X10 X . . . X11 X . . . X01 X . . . X10 X . . . X11 X . . . X00 X . . . X10 X . . . X11 X . . . X00 X . . . X01 X . . . X11 X . . . X00 X . . . X01 X . . . X10 Interleaved Burst Address Table (MODE = HIGH or NC) First Address (External) Second Address (Internal) Third Address (Internal) Fourth Address (Internal) X . . . X00 X . . . X01 X . . . X10 X . . . X11 X . . . X01 X . . . X00 X . . . X11 X . . . X10 X . . . X10 X . . . X11 X . . . X00 X . . . X01 X . . . X11 X . . . X10 X . . . X01 X . . . X00 PRELIMINARY (July, 2005, Version 0.0) 9 AMIC Technology, Corp. A67L93181/A67L83361 Absolute Maximum Ratings* *Comments Power Supply Voltage (VCC) . . . . . . . . . . -0.3V to +4.6V Voltage Relative to GND for any Pin Except VCC (Vin, Vout) . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC +0.3V Operating Temperature (Topr) . . . . . . . . . . . 0°C to 70°C Storage Temperature (Tbias) . . . . . . . . . . -10°C to 85 °C Storage Temperature (Tstg) . . . . . . . . . . -55°C to 125°C Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics and Operating Conditions (0°C ≤ TA ≤ 70°C, VCC, VCCQ = +3.3V± 5% unless otherwise noted) Symbol Parameter Conditions Min. Max. Unit Note VIH Input High Voltage 1.7 VCC+0.3 V 1,2 VIL Input Low Voltage -0.3 0.8 V 1,2 ILI Input Leakage Current 0V ≤ VIH ≤ VCC -2.0 2.0 µA ILO Output Leakage Current Output(s) disabled, -2.0 2.0 µA 0V ≤ VIN≤ VCC VOH Output High Voltage IOH = -1.0mA VOL Output Low Voltage IOL = 1.0mA VCC Supply Voltage Isolated Output Buffer Supply VCCQ 2.0 V 1,3 0.4 V 1,3 3.135 3.465 V 1 3.135 VCC V 1,4 Conditions Typ. Max. Unit Note Capacitance Symbol Parameter CI Control Input Capacitance TA = 25°C; f = 1MHz 3 4 pF 6 CO Input/Output Capacitance (I/O) VCC = 3.3V 4 5 pF 6 CA Address Capacitance 3 3.5 pF 6 Note : 1. All voltages referenced to VSS (GND). 2. Overshoot : VIH ≤ +4.6V for t ≤ tKHKH/2 for I ≤ 20mA Undershoot : VIL ≥ -0.7V for t ≤ tKHKH/2 for I ≤ 20mA Power-up : VIH ≤ +3.465V and VCC ≤ 3.135V for t ≤ 200ms 3. The load used for VOH, VOL testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O curves are available upon request. 4. VCC and VCCQ can be externally wired together to the same power supply. 5. This parameter is sampled. PRELIMINARY (July, 2005, Version 0.0) 10 AMIC Technology, Corp. A67L93181/A67L83361 ICC Operating Condition and Maximum Limits Max. Symbol Parameter -7.5 -8.5 -10.0 Unit Conditions ICC Power Supply Current : Operating TBD TBD TBD mA Device selected; All inputs ≤ VIL or ≥ VIH; Cycle time ≥ tKC (MIN); VCC = MAX; Output open ISB Standby TBD TBD TBD mA Device deselected; VCC = MAX; All inputs ≤ VSS+0.2 or ≥ VCC-0.2; Cycle time ≥ tKC (MIN) ISB Standby TBD TBD TBD mA Device deselected; VCC = MAX; All inputs ≤VSS+0.2 or ≥ VCC-0.2; All inputs static; CLK frequency=MAX; ZZ ≥ VCC-0.2V ISB2 Standby TBD TBD TBD mA Device deselected; VCC = MAX; All inputs ≤ VIL; or ≥ VIH; All inputs static; CLK frequency=0 ISB2Z SLEEP Mode TBD TBD TBD mA ZZ ≥ VIH PRELIMINARY (July, 2005, Version 0.0) 11 AMIC Technology, Corp. A67L93181/A67L83361 AC Characteristics (Note 4) (0°C ≤ TA ≤ 70°C, VCC = +3.3V± 5%) Symbol -7.5 Parameter -8.5 -10.0 Unit Min. Max. Min. Max. Min. Max. Note Clock tKHKH Clock cycle time 7.5 - -8.5 - 10 - ns tKF Clock frequency - 133 - 117 - 100 MHz tKHKL Clock HIGH time 2.5 - 2.8 - 3.0 - ns tKLKH Clock LOW time 2.5 - 2.8 - 3.0 - ns - 6.5 - 7.5 - 8.5 ns Output Times tKHQV Clock to output valid tKHQX Clock to output invalid 3.0 - 3.0 - 3.0 - ns tKHQX1 Clock to output in Low-Z 2.5 - 2.5 - 2.5 - ns 1,2,3 tKHQZ Clock to output in High-Z 1.5 3.8 1.5 4.0 1.5 5.0 ns 1,2,3 tGLQV OE to output valid - 3.5 - 3.5 - 4.0 ns 4 tGLQX OE to output in Low-Z 0 - 0 - 0 - ns 1,2,3 tGHQZ OE to output in High-Z - 3.5 - 3.5 - 4.0 ns 1,2,3 Setup Times tAVKH Address 1.5 - 2.0 - 2.0 - ns 5 tEVKH Clock enable ( CEN) 1.5 - 2.0 - 2.0 - ns 5 tCVKH Control signals 1.5 - 2.0 - 2.0 - ns 5 tDVKH Data-in 1.5 - 2.0 - 2.0 - ns 5 Hold Times tKHAX Address 0.5 - 0.5 - 0.5 - ns 5 tKHEX Clock enable ( CEN) 0.5 - 0.5 - 0.5 - ns 5 tKHCX Control signals 0.5 - 0.5 - 0.5 - ns 5 tKHDX Data-in 0.5 - 0.5 - 0.5 - ns 5 Notes: 1. This parameter is sampled. 2. Output loading is specified with C1=5pF as in Figure 2. 3. Transition is measured ±200mV from steady state voltage. 4. OE can be considered a “Don’t Care” during WRITE; however, controlling OE can help fine-tune a system for turnaround timing. 5. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK when ADV/ LD is LOW and chip enabled. All other synchronous inputs meet the setup and hold times with stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each rising edge of CLK (when ADV/ LD is LOW) to remain enabled. PRELIMINARY (July, 2005, Version 0.0) 12 AMIC Technology, Corp. A67L93181/A67L83361 AC Test Conditions Input Pulse Levels GND to 3.0V Input Rise and Fall Times 1.0ns Input Timing Reference Levels 1.25V Output Reference Levels 1.25V Output Load See Figures 1 and 2 +3.3V 319 Ω Q Q ZO=50Ω 50Ω 353 Ω 5pF VT=1.5V Figure 1 Output Load Equivalent PRELIMINARY (July, 2005, Version 0.0) Figure 2 Output Load Equivalent 13 AMIC Technology, Corp. A67L93181/A67L83361 SLEEP Mode SLEEP Mode is a low current “Power-down” mode in which the device is deselected and current is reduced to ISB2Z. This duration of SLEEP Mode is dictated by the length of time the ZZ is in a HIGH state. After entering SLEEP Mode, all inputs except ZZ become disabled and all outputs go to High-Z. The ZZ pin is asynchronous, active high input that causes the device to enter SLEEP Mode. When the ZZ pin becomes logic HIGH, ISB2Z is guaranteed after the time tZZI is met. Any operation pending when entering SLEEP Mode is not guaranteed to successfully complete. Therefore, SLEEP Mode (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting SLEEP Mode during tRZZ, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SLEEP Mode. SLEEP Mode Electrical Characteristics (VCC, VCCQ = +3.3V±5%) Symbol ISB2Z Parameter Current during SLEEP Mode Conditions Min. Max. Unit ZZ ≥ VIH - TBD mA Note tZZ ZZ active to input ignored 0 2(tKHKH) ns 1 tRZZ ZZ inactive to input sampled 0 2(tKHKH) ns 1 tZZI ZZ active to snooze current - 2(tKHKH) ns 1 tRZZI ZZ inactive to exit snooze current 0 ns 1 Note : 1. This parameter is sampled. SLEEP Mode Waveform CLK tZZ tRZZ ZZ tZZI I SUPPLY IISB2Z tRZZI ALL INPUTS (except ZZ) DESELECT or READ Only Output (Q) High-Z : Don't Care PRELIMINARY (July, 2005, Version 0.0) 14 AMIC Technology, Corp. A67L93181/A67L83361 READ/WRITE Timing 1 2 3 tKHKH 4 5 A3 A4 6 7 8 9 A5 A6 A7 10 CLK tEVK tKHE H X tCVKH tKHCX tKHKL tKLKH CEN CE ADV/ LD R/W BWx ADDRESS A2 A1 tAVKH tKHAX tKHQV tKHQX1 tDVKH I/O tKHQX tGLQV tKHDX D(A1) D(A2) D(A2+1) Q(A3) Q(A4) tKHQZ D(A5) Q(A4+1) Q(A6) D(A7) tKHQX tGHQZ tGLQX OE COMMAND WRITE D(A1) WRITE D(A2) BURST WRITE D(A2+1) READ Q(A3) BURST READ Q(A4+1) READ Q(A4) WRITE D(A5) READ Q(A6) : Don't Care WRITE D(A7) DESELECT : Undefined Note : 1. For this waveform, ZZ is tied LOW. 2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BRST operations are optional. 3. CE represents three signals. When CE = 0, it represents CE = 0, CE2 = 0, CE2 = 1. 4. Data coherency is provided for all possible operations. If a READ is initiated the most current data is used. The most recent data may be from the input data register. PRELIMINARY (July, 2005, Version 0.0) 15 AMIC Technology, Corp. A67L93181/A67L83361 NOP, STALL and Deselect Cycles 1 2 A1 A2 3 4 5 A3 A4 6 7 8 9 10 CLK CEN CE ADV/ LD R/W BWx ADDRESS A5 tKHQZ I/O D(A1) Q(A2) Q(A3) Q(A5) D(A4) tKHQX COMMAND WRITE D(A1) READ Q(A2) STALL READ Q(A3) WRITE D(A4) STALL NOP READ Q(A5) : Don't Care DESELECT CONTINUE DESELECT : Undefined Note : 1. The IGNORE CLOCK EDGE or STALL cycle (clock 3) illustrates CEN being used to create a “pause.” A WRITE is not performed during this cycle. 2. For this waveform, ZZ and OE are tied LOW. 3. CE represents three signals. When CE = 0, it represents CE = 0, CE2 = 0, CE2 = 1. 4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most recent data may be from the input data register. PRELIMINARY (July, 2005, Version 0.0) 16 AMIC Technology, Corp. A67L93181/A67L83361 Ordering Information Part No. Configure Cycle Time / Access Time Package A67L93181E-7.5 7.5ns / 6.5ns 100L LQFP A67L93181E-7.5F 7.5ns / 6.5ns 100L Pb-Free LQFP 8.5ns / 7.5ns 100L LQFP A67L93181E-8.5F 8.5ns / 7.5ns 100L Pb-Free LQFP A67L93181E-10.0 10ns / 8.5ns 100L LQFP A67L93181E-10.0F 10ns / 8.5ns 100L Pb-Free LQFP A67L83361E-7.5 7.5ns / 6.5ns 100L LQFP A67L83361E-7.5F 7.5ns / 6.5ns 100L Pb-Free LQFP 8.5ns / 7.5ns 100L LQFP A67L83361E-8.5F 8.5ns / 7.5ns 100L Pb-Free LQFP A67L83361E-10.0 10ns / 8.5ns 100L LQFP A67L83361E-10.0F 10ns / 8.5ns 100L Pb-Free LQFP A67L93181E-8.5 512K X 18 A67L83361E-8.5 256K X 36 PRELIMINARY (July, 2005, Version 0.0) 17 AMIC Technology, Corp. A67L93181/A67L83361 Package Information LQFP 100L Outline Dimensions unit: inches/mm HE A2 A1 D E 80 51 50 100 31 1 L1 L HD D 81 y 30 e b c θ Symbol A1 Dimensions in inches Dimensions in mm Min. Nom. Max. Min. Nom. Max. 0.002 - 0.006 0.05 - 0.15 A2 0.053 0.055 0.057 1.35 1.40 1.45 b 0.009 0.012 0.015 0.22 0.30 0.38 c 0.004 - 0.008 0.09 - 0.20 HE 0.866 BSC E 0.787 BSC 20.00 BSC HD 0.630 BSC 16.00 BSC D 0.551 BSC 14.00 BSC e 0.026 BSC L 0.018 L1 0.024 22.00 BSC 0.65 BSC 0.030 0.45 0.039 REF 0.60 0.75 1.00 REF y - - 0.004 - - 0.10 θ 0° 3.5° 7° 0° 3.5° 7° Notes: 1. Dimensions D and E do not include mold protrusion. 2. Dimensions b does not include dambar protrusion. Total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. PRELIMINARY (July, 2005, Version 0.0) 18 AMIC Technology, Corp.