EPIGAP ELS-750-134 Smd-led Datasheet

SMD-LED
ELS-750-134
16.11.2007
rev. 04
Radiation
Type
Technology
Case
Infrared
SMD
AlGaAs/AlGaAs
SMD 1206, lens
Description
1600
High speed, high power LED in standard
SMD package with lens, compact design
allows for easy circuit board mounting
and assembling of arrays
500
R
0
75
1600
3200
C a th o d e
A no de
A no de
marking
m arking
u n i t: µ m
to l e r a n c e : ± 1 0 0 µ m
b ack side
1900
Applications
Optical communications, remote control,
light barriers, measurement applications
and security systems, automation
Absolute Maximum Ratings
at Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
IF
50
mA
IFM
150
mA
P
90
mW
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +90
°C
Typ
Max
Unit
1,9
2,3
V
DC forward current
tp ≤ 100 µs, tp/T ≤ 0.1
Peak forward current
Power dissipation
Electrical and Optical Characteristics
at Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Forward voltage
IF = 50 mA
VF
Reverse voltage
IF = 100 µA
VR
Radiant power
IF = 50 mA
Φe
Peak wavelength
IF = 50 mA
λp
Spectral bandwidth at 50%
IF = 50 mA
∆λ0.5
30
nm
Viewing angle
IF = 50 mA
ϕ
25
deg.
Switching time
IF = 50 mA
tr , t f
40
ns
5
V
13
740
750
mW
760
nm
Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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