Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 450 MHz Power Gain — 22 dB Drain Efficiency — 60% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power Features • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 10 - 600 MHz, 300 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V4300NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V4300NBR1 PARTS ARE SINGLE - ENDED RFin/VGS RFout/VDS RFin/VGS RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +110 Vdc Gate- Source Voltage VGS - 6.0, +10 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 83°C, 300 W CW Symbol Value (1,2) Unit RθJC 0.24 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 10 μAdc V(BR)DSS 110 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 50 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 2.5 mA Gate Threshold Voltage (VDS = 10 Vdc, ID = 800 μAdc) VGS(th) 0.9 1.65 2.4 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.7 3.4 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.25 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.8 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 105 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 304 — pF Off Characteristics Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain- Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 450 MHz, CW Power Gain Gps 20 22 24 dB Drain Efficiency ηD 58 60 — % Input Return Loss IRL — - 16 -9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V4300NR1 MRF6V4300NBR1 2 RF Device Data Freescale Semiconductor B3 VSUPPLY B1 L2 C9 VBIAS C5 C2 + C1 C7 C4 C8 R1 C13 L4 C12 RF INPUT Z1 Z2 Z3 L1 Z4 Z5 Z7 Z8 Z9 C20 Z10 C21 C22 Z11 C25 C26 Z12 C19 C23 C24 C27 C28 Z13 RF OUTPUT C15 Z6 C11 C16 C17 DUT C18 L5 C14 L3 C10 C6 B2 C3 VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.900″ x 0.082″ Microstrip 0.115″ x 0.170″ Microstrip 0.260″ x 0.170″ Microstrip 0.380″ x 0.170″ Microstrip 0.220″ x 0.220″ Microstrip 0.290″ x 0.630″ Microstrip 0.220″ x 0.630″ Microstrip Z8 Z9 Z10 Z11 Z12 Z13 PCB 0.380″ x 0.220″ Microstrip 0.040″ x 0.170″ Microstrip 0.315″ x 0.170″ Microstrip 0.230″ x 0.170″ Microstrip 0.390″ x 0.170″ Microstrip 0.680″ x 0.082″ Microstrip Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 2. MRF6V4300NR1(NBR1) Test Circuit Schematic Table 6. MRF6V4300NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead 2743019447 Fair- Rite B2, B3 Long Ferrite Beads 2743021447 Fair- Rite C1 47 μF, 25 V, Tantalum Capacitor T491B476M025AT Kemet C2, C3 22 μF, 50 V, Chip Capacitors C5750JF1H226ZT TDK C4, C5, C6, C7 1 μF, 100 V, Chip Capacitors C3225JB2A105KT TDK C8, C9, C10 15 nF, 100 V, Chip Capacitors C3225CH2A153JT TDK C11, C12, C13, C14, C15 240 pF, Chip Capacitors ATC100B241JT500XT ATC C16 9.1 pF, Chip Capacitor ATC100B9R1JT500XT ATC C17 15 pF, Chip Capacitor ATC100B150JT500XT ATC C18 51 pF, Chip Capacitor ATC100B510JT500XT ATC C19, C20 5.6 pF, Chip Capacitors ATC100B5R6JT500XT ATC C21, C22, C23, C24 4.3 pF, Chip Capacitors ATC100B4R3JT500XT ATC C25, C26, C27, C28 4.7 pF, Chip Capacitors ATC100B4R7JT500XT ATC L1 27 nH Inductor 1812SMS- 27NJLC Coilcraft L2, L3 47 nH Inductors 1812SMS- 47NJLC Coilcraft L4, L5 5 Turns, #18 AWG Inductors, Hand Wound Copper Wire R1 10 Ω, 1/4 W, Chip Resistor CRCW120610R1FKEA Vishay MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 3 C1 B1 C7 B3 C4 C8 C2 C9 C5 L2 R1 ATC C12 L1 C11 C17 C18 CUT OUT AREA C16 L4 C13 C20 C21 C22 C25 C26 C19 C23 C24 C27 C28 C15 L5 C14 L3 MRF6V4300N/NB Rev. 1 C10 C6 B2 C3 Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout MRF6V4300NR1 MRF6V4300NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 100 ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Ciss Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 10 10 TC = 25°C 1 1 0 10 40 30 20 50 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain - Source Voltage Figure 5. DC Safe Operating Area 10 23 VGS = 3 V 22 8 Gps, POWER GAIN (dB) ID, DRAIN CURRENT (AMPS) 9 7 6 2.75 V 5 2.63 V 4 2.5 V 3 2 IDQ = 1350 mA 21 1125 mA 900 mA 20 450 mA 650 mA 19 1 VDD = 50 Vdc f = 450 MHz 2.25 V 18 10 0 0 20 40 60 80 100 120 100 600 DRAIN VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) CW Figure 6. DC Drain Current versus Drain Voltage Figure 7. CW Power Gain versus Output Power 60 0 −5 VDD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz Two−Tone Measurements, 100 kHz Tone Spacing −10 −15 −20 −25 −30 IDQ = 450 mA −35 650 mA −40 900 mA −45 −50 −55 1350 mA 58 P1dB = 55.15 dBm (327 W) 57 56 Actual 55 54 53 52 VDD = 50 Vdc, IDQ = 900 mA f = 450 MHz 51 1125 mA −60 10 100 600 Ideal P3dB = 56.06 dBm (403 W) 59 Pout, OUTPUT POWER (dBm) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 100 10 1 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 50 28 29 30 31 32 33 34 35 36 37 38 Pout, OUTPUT POWER (WATTS) PEP Pin, INPUT POWER (dBm) Figure 8. Third Order Intermodulation Distortion versus Output Power Figure 9. CW Output Power versus Input Power MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 60 23 20 19 18 25 V 30 V 35 V IDQ = 900 mA f = 450 MHz VDD = 20 V 0 50 100 150 250 200 300 350 85_C 50 45 VDD = 50 Vdc IDQ = 900 mA f = 450 MHz 40 20 25 40 35 30 Pin, INPUT POWER (dBm) Figure 10. Power Gain versus Output Power Figure 11. Power Output versus Power Input 108 80 24 25_C 23 70 60 TC = −30_C Gps 85_C 22 25_C 50 −30_C 21 85_C 40 30 20 18 10 TC = −30_C Pout, OUTPUT POWER (WATTS) CW 25 19 25_C 55 35 15 400 ηD VDD = 50 Vdc IDQ = 900 mA f = 450 MHz 100 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power MTTF (HOURS) 16 50 V 45 V 40 V 17 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) 21 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 22 107 106 20 10 500 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 300 W, and ηD = 60%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRF6V4300NR1 MRF6V4300NBR1 6 RF Device Data Freescale Semiconductor Zsource f = 450 MHz Zo = 10 Ω f = 450 MHz Zload VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW f MHz Zsource W Zload W 450 0.40 + j5.93 1.42 + j5.5 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6V4300NR1 MRF6V4300NBR1 8 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 9 MRF6V4300NR1 MRF6V4300NBR1 10 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 11 MRF6V4300NR1 MRF6V4300NBR1 12 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 July 2008 • Initial Release of Data Sheet 1 Oct. 2008 • Added Fig. 13, MTTF versus Junction Temperature, p. 6 MRF6V4300NR1 MRF6V4300NBR1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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