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PD - 9.1092A
IRLI2203G
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Logic-Level Gate Drive
RDS(on) Specified at VGS=5.0V & 10V
VDSS = 30V
RDS(on) = 0.010Ω
ID = 52A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Collector Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
52
37
210
48
0.32
±20
90
31
4.8
4.5
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
3.1
65
°C/W
Revision 1
To Order
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IRLI2203G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
–––
1.0
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
––– 3700
––– 1700
––– 310
––– 12
V(BR)DSS
Typ.
–––
0.039
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.1
110
110
100
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA, TJ >-40°C
––– V/°C Reference to 25°C, ID = 1mA
0.010
VGS = 10V, ID = 31A
Ω
0.015
VGS = 5.0V, ID = 26A
2.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 55A
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 150°C
100
VGS = 10V
nA
-100
VGS = -10V
85
ID= 46A, VDS= 24V, VGS= 5.0V
150
ID= 55A
nC
23
VDS = 24V
36
VGS = 10V, See Fig. 6 and 13
–––
VDD = 15V
–––
ID = 55A
ns
–––
RG = 5.0Ω
–––
RD = 0.26Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
pF
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
52
–––
–––
210
A
––– ––– 1.6
––– 59
89
––– 0.11 0.17
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 31A, VGS = 0V
TJ = 25°C, IF = 55A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 55A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L = 20µH
RG = 25Ω, IAS = 55A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Caculated continuous current based on maximum allowable junction temperature;
for recomended current-handling of the package refer to Design Tip # 93-4
To Order
t=60s, ƒ=60Hz
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IRLI2203G
10000
1000
VGS
10.00V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
VGS
10.00V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
1000
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
100
10
1
100
10
2.25V
1
2.25V
20µs PULSE WIDTH
Tc = 25°C
A
0.1
0.1
1
10
20µs PULSE WIDTH
TC = 175°C
0.1
0.1
1 00
VDS , Drain-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 175°C
100
10
VDS = 15V
20µs PULSE WIDTH
2
3
4
5
6
7
8
9
A
100
Fig 2. Typical Output Characteristics,
TC = 175oC
1000
1
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
T C = 25oC
TJ = 25°C
1
10
A
2.5
ID = 52A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 5.0V
0
20
40
60
TJ , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
To Order
A
80 100 120 140 160 180
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLI2203G
7000
VGS , Gate-to-Source Voltage (V)
6000
C, Capacitance (pF)
16
V GS = 0V,
f = 1MHz
Ciss = Cgs + C gd , Cds SHORTED
Crss = C gd
Coss = Cds + C gd
5000
Ciss
4000
Coss
3000
2000
1000
VDS = 24V
I D = 55A
12
8
4
Crss
0
0
A
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
100
0
VDS , Drain-to-Source Voltage (V)
40
60
80
100
A
120
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
20
100
TJ = 175°C
100µs
100
1ms
TJ = 25°C
VGS = 0V
10
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
A
2.4
10
0.1
TC = 25°C
TJ = 175°C
Single Pulse
10ms
A
1
10
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
To Order
100
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IRLI2203G
RD
VDS
VGS
60
D.U.T.
RG
LIMITED BY PACKAGE
VDD
ID, Drain Current (Amps)
50
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
30
20
10
A
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
PD M
0.1
t
0.02
N o te s :
1 . D u ty fa c to r D = t
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
1
t
0.01
1
/ t
2
2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
To Order
A
100
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10 V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRLI2203G
240
ID
21A
37A
BOTTOM 52A
TOP
200
160
120
80
40
0
VDD = 25V
25
50
A
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
Fig 13a. Basic Gate Charge Waveform
To Order
Fig 13b. Gate Charge Test Circuit
175
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IRLI2203G
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
To Order
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IRLI2203G
Package Outline
TO-220 FullPak Outline
Dimensions are shown in millimeters (inches)
Part Marking Information
TO-220 FullPak
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice. 6/95
To Order