DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX399 series Voltage regulator diodes Product specification 1999 Jun 04 Philips Semiconductors Product specification Voltage regulator diodes BZX399 series FEATURES PINNING • Total power dissipation: max. 300 mW PIN DESCRIPTION , • Tolerance: ±5% 1 cathode • Working voltage range: nom. 1.8 to 43 V (E24 range) 2 anode • Improved IZ/VZ characteristic at low currents (IZ = 50 µA). This results in a noise free and sharp breakdown knee. APPLICATIONS handbook, halfpage • General regulation functions, where low noise at low currents is required • Low power consumption applications (e.g. hand-held applications). 1 2 Top view DESCRIPTION MAM387 Fig.1 Simplified outline (SOD323) and symbol. Low-power low noise voltage regulator diodes in SOD323 plastic SMD package. The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 34 types with nominal working voltages from 1.8 to 43 V. MARKING TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE BZX399-C1V8 B1 BZX399-C4V3 B0 BZX399-C10 BJ BZX399-C24 BT BZX399-C2V0 B2 BZX399-C4V7 BA BZX399-C11 BK BZX399-C27 BU BZX399-C2V2 B3 BZX399-C5V1 BB BZX399-C12 BL BZX399-C30 BV BZX399-C2V4 B4 BZX399-C5V6 BC BZX399-C13 BM BZX399-C33 BW BZX399-C2V7 B5 BZX399-C6V2 BD BZX399-C15 BN BZX399-C36 BX BZX399-C3V0 B6 BZX399-C6V8 BE BZX399-C16 BP BZX399-C39 BY BZX399-C3V3 B7 BZX399-C7V5 BF BZX399-C18 BQ BZX399-C43 BZ BZX399-C3V6 B8 BZX399-C8V2 BG BZX399-C20 BR BZX399-C3V9 B9 BZX399-C9V1 BH BZX399-C22 BS 1999 Jun 04 2 Philips Semiconductors Product specification Voltage regulator diodes BZX399 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tamb = 25 °C prior to surge see Tables 1 and 2 250 Ptot total power dissipation Tamb = 25 °C; note 1 − Tstg storage temperature Tj junction temperature UNIT mA 300 mW −65 +150 °C − 150 °C Note 1. Device mounted on a FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total BZX399-C series Tj = 25 °C unless otherwise specified. SYMBOL VF IR 1999 Jun 04 PARAMETER forward voltage CONDITIONS MAX. UNIT IF = 10 mA; see Fig.5 0.9 V IF = 100 mA; see Fig.5 1.0 V BZX399-C1V8 VR = 1 V 2 µA BZX399-C2V0 VR = 1 V 1 µA BZX399-C2V2 VR = 1 V 0.5 µA BZX399-C2V4 VR = 1 V 0.2 µA BZX399-C2V7 VR = 1 V 0.05 µA BZX399-C3V0 VR = 1 V 0.02 µA BZX399-C3V3 VR = 2 V 2 µA BZX399-C3V6 VR = 2 V 1 µA BZX399-C3V9 VR = 2 V 0.5 µA BZX399-C4V3 VR = 2 V 0.1 µA BZX399-C4V7 VR = 3 V 2 µA BZX399-C5V1 VR = 3 V 1 µA BZX399-C5V6 VR = 4 V 1 µA BZX399-C6V2 VR = 5 V 0.1 µA BZX399-C6V8 VR = 5 V 0.01 µA BZX399-C7V5 VR = 5 V 0.1 µA BZX399-C8V2 VR = 6 V 0.2 µA BZX399-C9V1 VR = 7 V 0.1 µA BZX399-C10 VR = 7 V 0.1 µA BZX399-C11 VR = 8 V 0.05 µA BZX399-C12 VR = 9 V 0.05 µA BZX399-C13 VR = 10 V 0.05 µA BZX399-C15 to 43 VR = 0.7VZnom 0.01 µA reverse current 3 Philips Semiconductors Product specification Voltage regulator diodes BZX399 series Table 1 Per type BZX399-C1V8 to C15 Tj = 25 °C unless otherwise specified. BZX399-C XXX WORKING VOLTAGE VZ (V) IZ = 50 µA VOLTAGE CHANGE ∆VZ(V) (note 1) TEMP. COEFF. SZ (mV/K) IZ = 50 µA (see Figs 2, 3 and 4) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. TYP. MAX. MAX. Tol. ±5% MIN. MAX. 1V8 1.71 1.89 0.65 −0.85 425 6.0 2V0 1.90 2.10 0.70 −0.95 410 6.0 2V2 2.09 2.31 0.75 −1.05 390 6.0 2V4 2.28 2.52 0.80 −1.15 370 6.0 2V7 2.57 2.84 0.85 −1.35 350 6.0 3V0 2.85 3.15 0.90 −1.50 325 6.0 3V3 3.14 3.47 0.93 −1.65 310 6.0 3V6 3.42 3.78 0.95 −1.80 300 6.0 3V9 3.71 4.10 0.97 −1.95 290 6.0 4V3 4.09 4.52 0.99 −2.05 280 6.0 4V7 4.47 4.94 0.97 −1.90 275 6.0 5V1 4.85 5.36 0.60 0.15 300 5.0 5V6 5.32 5.88 0.20 1.75 275 4.0 6V2 5.89 6.51 0.10 2.35 250 3.0 6V8 6.46 7.14 0.10 3.00 215 3.0 7V5 7.13 7.88 0.15 3.60 170 3.0 8V2 7.79 8.61 0.15 4.25 150 3.0 9V1 8.65 9.56 0.10 5.00 120 3.0 10 9.50 10.50 0.10 5.80 110 3.0 11 10.45 11.55 0.11 6.70 110 2.5 12 11.40 12.60 0.12 7.65 105 2.5 13 12.35 13.65 0.13 8.60 105 2.5 15 14.25 15.75 0.15 10.50 100 2.0 Note 1. ∆VZ = VZ at 100 µA minus VZ at 10 µA. 1999 Jun 04 4 Philips Semiconductors Product specification Voltage regulator diodes BZX399 series Table 2 Per type BZX399-C16 to C43 Tj = 25 °C unless otherwise specified. BZX399- C XXX WORKING VOLTAGE VZ (V) IZ = 50 µA VOLTAGE CHANGE ∆VZ(V) (note 1) TEMP. COEFF. SZ (mV/K) IZ = 50 µA (see Fig.4) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. TYP. MAX. MAX. Tol. ±5% MIN. MAX. 16 15.20 16.80 0.16 11.4 95 1.5 18 17.10 18.90 0.18 13.3 95 1.5 20 19.00 21.00 0.20 15.3 90 1.5 22 20.90 23.10 0.22 17.2 85 1.25 24 22.80 25.20 0.24 19.2 80 1.25 27 25.65 28.35 0.27 22.0 75 1.0 30 28.50 31.50 0.30 25.2 65 1.0 33 31.35 34.65 0.30 28.5 60 0.9 36 34.20 37.80 0.30 32.0 60 0.8 39 37.05 40.95 0.30 35.1 60 0.7 43 40.85 45.15 0.30 39.4 55 0.6 Note 1. ∆VZ = VZ at 100 µA minus VZ at 10 µA. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 415 K/W Rth j-s thermal resistance from junction to soldering point note 2 110 K/W Notes 1. Device mounted on a FR4 printed circuit-board. 2. Soldering point of the cathode tab. 1999 Jun 04 5 Philips Semiconductors Product specification Voltage regulator diodes BZX399 series GRAPHICAL DATA MDA989 0 handbook, full pagewidth C4V7 SZ (mV/K) −0.8 C1V8 C4V3 C2V0 C2V4 C3V9 −1.6 C3V0 −2.4 10 C3V6 102 C3V3 103 IZ (µA) Tj = 25 to 150 °C. Fig.2 Temperature coefficient as a function of working current; typical values. MDA990 6 handbook, halfpage SZ (mV/K) SZ (mV/K) MDA991 50 handbook, halfpage C8V2 C43 40 4 C36 C6V8 30 C6V2 C30 2 C5V6 C27 C24 20 C5V1 C18 C15 0 10 C12 C10 −2 10 102 IZ (µA) 0 10 103 102 Tj = 25 to 150 °C. Tj = 25 to 150 °C. Fig.3 Fig.4 Temperature coefficient as a function of working current; typical values. 1999 Jun 04 6 IZ (µA) 103 Temperature coefficient as a function of working current; typical values. Philips Semiconductors Product specification Voltage regulator diodes BZX399 series MBG781 300 handbook, halfpage IF (mA) 200 100 0 0.6 0.8 VF (V) 1.0 Tj = 25 °C. Fig.5 Forward current as a function of forward voltage; typical values. 1999 Jun 04 7 Philips Semiconductors Product specification Voltage regulator diodes BZX399 series PACKAGE OUTLINE SOD323 Plastic surface mounted package; 2 leads A A1 , Q c Lp v M A HE A D 1 E bp 2 (1) 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp mm 1.1 0.8 + 0.05 − 0.05 0.40 0.25 c D E HE Lp Q v 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOD323 1999 Jun 04 EUROPEAN PROJECTION ISSUE DATE 98-09-14 8 Philips Semiconductors Product specification Voltage regulator diodes BZX399 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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