MSRTA200120(A)D thru MSRTA200160(A)D Silicon Standard Recovery Diode VRRM = 1200 V - 1600 V IF(AV) = 200 A Features • High Surge Capability • Types from 1200 V to 1600 V VRRM Heavy Three Tower Package • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage VRRM DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg Conditions MSRTA200120(A)D MSRTA200140(A)D MSRTA200160(A)D Unit 1200 1400 1600 V 1200 55 to 150 50 -55 -55 to 150 1400 -55 55 to 150 50 -55 to 150 1600 -55 55 to 150 50 -55 to 150 V °C C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified MSRTA200120(A)D MSRTA200140(A)D MSRTA200160(A)D Symbol Conditions Average forward current (per leg) IF(AV) TC = 125 °C 200 200 200 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 3000 3000 3000 A Maximum instantaneous forward voltage (per leg) VF IFM = 200 A, Tj = 25 °C 1.1 1.1 1.1 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 10 10 10 μA Tj = 150 °C 5 5 5 mA 0.35 0.35 0.35 °C/W Parameter Unit Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘjc www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 MSRTA200120(A)D thru MSRTA200160(A)D www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 MSRTA200120(A)D thru MSRTA200160(A)D Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3