Preliminary Datasheet H7N1004FM R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 Silicon N-Channel MOSFET High-Speed Power Switching Features Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM ) 2 D 1. Gate 2. Drain 3. Source 1G 1 2 3 S 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse)Note1 IDR Note 3 IAP EAR Note 3 Pch Note 2 Tch Tstg Value 100 20 25 100 25 15 22.5 25 150 –55 to +150 Unit V V A A A A mJ W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 Page 1 of 7 H7N1004FM Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time tf VDF trr Min 100 20 — — 1.5 — — 20 — — — — — — — — — Typ — — — — — 25 30 35 2800 240 140 50 9 11 23 110 70 Max — — 10 10 2.5 35 45 — — — — — — — — — — Unit V V A A V m m S pF pF pF nC nC nC ns ns ns — — — 9.5 0.89 45 — — — ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 12.5 A, VGS = 10 V Note 4 ID = 12.5 A, VGS = 4.5 V Note 4 ID = 12.5 A, VGS = 10 V Note 4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 25 A VGS = 10 V, ID = 12.5 A RL = 2.4 Rg = 4.7 IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 diF/dt = 100 A/s Notes: 4. Pulse test R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 Page 2 of 7 H7N1004FM Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 (A) 300 ID 30 10 100 20 10 0 0 50 100 150 Case Temperature 200 30 3 1 0.3 Operation in 0.1 this area is limited by RDS (on) 0.03 Ta = 25°C 0.01 0.1 0.3 1 3 10 Tc (°C) 30 100 300 1000 VDS (V) 50 VDS = 10 V Pulse Test 4V 30 40 30 3.5 V 20 10 Drain Current Drain Current μs μs Typical Transfer Characteristics Pulse Test 40 0 Drain to Source Voltage ID (A) ID (A) 10 V 6V m 10 s =1 0m D (T C O s( c = pe 1s ho 25 rati t) °C on ) Typical Output Characteristics 50 1 PW 10 Drain Current Channel Dissipation Pch (W) 40 20 Tc = 75°C 10 25°C VGS = 3 V –25°C 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 VDS (V) 0.8 0.6 ID = 20 A 0.4 10 A 0.2 5A 0 0 5 10 Gate to Source Voltage R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 15 20 VGS (V) 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 2 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 1 500 Pulse Test 200 100 50 VGS = 4.5 V 20 10 V 10 5 1 2 5 10 Drain Current 20 50 100 ID (A) Page 3 of 7 Preliminary Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) H7N1004FM 100 Pulse Test 80 ID = 20 A 5, 10 A 60 VGS = 4.5 V 40 ID = 20 A 5, 10 A 20 VGS = 10 V 0 –25 0 25 50 75 100 125 150 Case Temperature Tc 100 Tc = –25°C 10 25°C 1 75°C 0.1 VDS = 10 V Pulse Test 0.01 0.01 5000 Capacitance C (pF) Reverse Recovery Time trr (ns) 10000 50 20 di / dt = 100 A / μs VGS = 0, Ta = 25°C Ciss 2000 1000 500 Coss 200 100 50 Crss VGS = 0 f = 1 MHz 20 10 2 5 Drain Current 10 20 50 100 0 IDR (A) 120 VDS VDD = 25 V 50 V 100 V 12 80 8 40 4 VDD = 100 V 50 V 25 V 0 0 20 40 Gate Charge R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 60 80 Qg (nc) 30 40 50 0 100 1000 Switching Time t (ns) 16 160 VGS (V) VGS Gate to Source Voltage ID = 25 A 20 Switching Characteristics 20 200 10 Drain to Source Voltage VDS (V) Dynamic Input Characteristics (V) 100 Typical Capacitance vs. Drain to Source Voltage 100 10 0.1 0.2 0.5 1 VDS 10 Drain Current ID (A) (°C) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Voltage 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 μs, duty ≤ 1 % 300 RG = 4.7 Ω tr 100 td(off) td(on) 30 tf 10 3 1 0.1 0.3 1 3 Drain Current 10 30 100 ID (A) Page 4 of 7 H7N1004FM Preliminary Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 50 40 30 10 V 5V 20 VGS = 0, –5 V 10 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 40 IAP = 15 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω 32 24 16 8 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 0.1 0.05 θch – c (t) = γ s (t) • θch – c 0.02 0.03 θch – c = 5°C/W, Tc = 25°C 0.01 0.01 hot 1s pu lse PDM D= PW T PW 0.003 T 0.001 10 μ 100 μ 1m 10 m 100 m 10 1 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin 15 V 50 Ω 0 R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 VDD Page 5 of 7 H7N1004FM Preliminary Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Rg Vin Vout Vin 10 V VDS = 30 V 10% 10% 90% td(on) R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 10% RL tr 90% td(off) tf Page 6 of 7 H7N1004FM Preliminary Package Dimensions Package Name TO-220FM JEITA Package Code SC-67 Previous Code TO-220FM / TO-220FMV RENESAS Code PRSS0003AD-A MASS[Typ.] 1.8g 10.0 ± 0.3 Unit: mm 2.8 ± 0.2 φ 3.2 ± 0.2 2.5 ± 0.2 4.45 ± 0.3 14.0 ± 1.0 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 7.0 ± 0.3 2.5 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Orderable Part Number H7N1004FM-E Quantity 600 pcs R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 Shipping Container Box (Tube) Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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