Microsemi APTGF150SK120TG Buck chopper npt igbt power module Datasheet

APTGF150SK120TG
Buck chopper
NPT IGBT Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
NTC2
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Q1
G1
E1
OUT
0/VBU S SENSE
0/VBU S
0/VBUS
SENSE
VBUS
E1
G1
0/VBUS
0/VBUS
SENSE
NTC1
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
OUT
OUT
NT C2
NT C1
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
Tc = 25°C
Max ratings
1200
200
150
300
±20
961
Tj = 150°C
300A @ 1200V
Tc = 25°C
Tc = 80°C
Tc = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGF150SK120TG – Rev 1 July, 2006
VBUS
VCES = 1200V
IC = 150A @ Tc = 80°C
APTGF150SK120TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Chopper diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
Test Conditions
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
4.5
Typ
10.2
1.4
0.75
120
50
310
20
Max
350
600
3.7
Unit
6.5
±500
V
nA
Max
Unit
IF = 200A
IF = 400A
IF = 200A
IF = 200A
VR = 800V
di/dt = 400A/µs
ns
30
18
mJ
8
Typ
Max
Unit
V
Tj = 25°C
Tj = 125°C
350
600
Tc = 70°C
200
Tj = 125°C
2
2.3
1.8
Tj = 25°C
420
Tj = 125°C
520
Tj = 25°C
Tj = 125°C
2.5
10.7
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V
ns
1200
VR=1200V
µA
nF
130
60
360
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
3.2
3.9
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 150A
R G = 5.6Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 150A
R G = 5.6Ω
VGE = 15V
Tj = 125°C
VBus = 600V
IC = 150A
Tj = 125°C
R G = 5.6Ω
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Test Conditions
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 150A
Tj = 125°C
VGE = VCE, IC = 5 mA
VGE = ±20V, VCE = 0V
µA
A
2.5
V
ns
µC
2-5
APTGF150SK120TG – Rev 1 July, 2006
Symbol Characteristic
APTGF150SK120TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.13
0.32
Unit
T: Thermistor temperature
Thermal and package characteristics
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Symbol Characteristic
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M5
2500
-40
-40
-40
2.5
°C/W
V
150
125
100
4.7
160
°C
N.m
g
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-5
APTGF150SK120TG – Rev 1 July, 2006
SP4 Package outline (dimensions in mm)
APTGF150SK120TG
Typical Performance Curve
Output Characteristics
300
250
250
150
VGE =20V
VGE=12V
150
VG E=9V
100
TJ=125°C
50
50
0
0
0
1
2
3
VCE (V)
4
5
6
0
1
2
3
4
V CE (V)
5
6
Energy losses vs Collector Current
Transfert Characteristics
300
56
VCE = 600V
VGE = 15V
R G = 5.6 Ω
T J = 125°C
48
250
40
E (mJ)
200
TJ=125°C
150
100
Eon
32
24
16
TJ=25°C
50
8
Eoff
0
0
5
6
7
8
9
10
11
0
12
50
100
150
200
250
300
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
70
350
50
40
300
250
Eon
IC (A)
VCE = 600V
VG E =15V
IC = 150A
TJ = 125°C
60
E (mJ)
VGE =15V
200
100
IC (A)
TJ = 125°C
TJ=25°C
200
IC (A)
IC (A)
Output Characteristics (VGE=15V)
300
30
20
200
150
VGE=15V
TJ=125°C
R G=5.6 Ω
100
Eoff
50
10
0
0
0
5
0
10 15 20 25 30 35 40 45 50
Gate Resistance (ohms)
300
600
900
1200
1500
V CE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.08
0.06
0.9
IGBT
0.7
0.5
0.3
0.04
0.02
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGF150SK120TG – Rev 1 July, 2006
Thermal Impedance (°C/W)
0.14
APTGF150SK120TG
Forward Characteristic of diode
500
90
80
70
60
ZVS
ZCS
50
VCE =600V
D=50%
RG =5.6 Ω
TJ=125°C
TC=75°C
400
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
100
40
hard
switching
30
20
300
TJ=125°C
200
TJ=25°C
100
10
0
0
0
40
80
120
160
0
200
0.5
IC (A)
1
1.5
V F (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.15
0.1
0.05
Diode
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGF150SK120TG – Rev 1 July, 2006
rectangular Pulse Duration (Seconds)
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