APTGF150SK120TG Buck chopper NPT IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies NTC2 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Q1 G1 E1 OUT 0/VBU S SENSE 0/VBU S 0/VBUS SENSE VBUS E1 G1 0/VBUS 0/VBUS SENSE NTC1 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant OUT OUT NT C2 NT C1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 1200 200 150 300 ±20 961 Tj = 150°C 300A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF150SK120TG – Rev 1 July, 2006 VBUS VCES = 1200V IC = 150A @ Tc = 80°C APTGF150SK120TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 4.5 Typ 10.2 1.4 0.75 120 50 310 20 Max 350 600 3.7 Unit 6.5 ±500 V nA Max Unit IF = 200A IF = 400A IF = 200A IF = 200A VR = 800V di/dt = 400A/µs ns 30 18 mJ 8 Typ Max Unit V Tj = 25°C Tj = 125°C 350 600 Tc = 70°C 200 Tj = 125°C 2 2.3 1.8 Tj = 25°C 420 Tj = 125°C 520 Tj = 25°C Tj = 125°C 2.5 10.7 www.microsemi.com V ns 1200 VR=1200V µA nF 130 60 360 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 3.2 3.9 Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 150A R G = 5.6Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 150A R G = 5.6Ω VGE = 15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C R G = 5.6Ω Turn-on Delay Time Rise Time Turn-off Delay Time Tf Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 150A Tj = 125°C VGE = VCE, IC = 5 mA VGE = ±20V, VCE = 0V µA A 2.5 V ns µC 2-5 APTGF150SK120TG – Rev 1 July, 2006 Symbol Characteristic APTGF150SK120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.13 0.32 Unit T: Thermistor temperature Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Symbol Characteristic RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M5 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 160 °C N.m g ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF150SK120TG – Rev 1 July, 2006 SP4 Package outline (dimensions in mm) APTGF150SK120TG Typical Performance Curve Output Characteristics 300 250 250 150 VGE =20V VGE=12V 150 VG E=9V 100 TJ=125°C 50 50 0 0 0 1 2 3 VCE (V) 4 5 6 0 1 2 3 4 V CE (V) 5 6 Energy losses vs Collector Current Transfert Characteristics 300 56 VCE = 600V VGE = 15V R G = 5.6 Ω T J = 125°C 48 250 40 E (mJ) 200 TJ=125°C 150 100 Eon 32 24 16 TJ=25°C 50 8 Eoff 0 0 5 6 7 8 9 10 11 0 12 50 100 150 200 250 300 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 70 350 50 40 300 250 Eon IC (A) VCE = 600V VG E =15V IC = 150A TJ = 125°C 60 E (mJ) VGE =15V 200 100 IC (A) TJ = 125°C TJ=25°C 200 IC (A) IC (A) Output Characteristics (VGE=15V) 300 30 20 200 150 VGE=15V TJ=125°C R G=5.6 Ω 100 Eoff 50 10 0 0 0 5 0 10 15 20 25 30 35 40 45 50 Gate Resistance (ohms) 300 600 900 1200 1500 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.1 0.08 0.06 0.9 IGBT 0.7 0.5 0.3 0.04 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF150SK120TG – Rev 1 July, 2006 Thermal Impedance (°C/W) 0.14 APTGF150SK120TG Forward Characteristic of diode 500 90 80 70 60 ZVS ZCS 50 VCE =600V D=50% RG =5.6 Ω TJ=125°C TC=75°C 400 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 40 hard switching 30 20 300 TJ=125°C 200 TJ=25°C 100 10 0 0 0 40 80 120 160 0 200 0.5 IC (A) 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.15 0.1 0.05 Diode 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF150SK120TG – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)