IRF IRHQ4110 Radiation hardened power mosfet surface mount (lcc-28) Datasheet

PD - 93785A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
IRHQ7110
100V, QUAD N-CHANNEL
®
™
RAD-Hard HEXFET
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHQ7110
100K Rads (Si)
RDS(on)
0.6Ω
ID
3.0A
IRHQ3110
300K Rads (Si)
0.6Ω
3.0A
IRHQ4110
600K Rads (Si)
0.6Ω
3.0A
IRHQ8110
1000K Rads (Si)
0.75Ω
3.0A
TM
LCC-28
HEXFET® MOSFET
International Rectifier’s RAD-Hard
technology provides high performance power MOSFETs
for space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Units
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
3.0
1.9
12
12
0.1
±20
85
3.0
1.2
3.0
-55 to 150
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.89 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
For footnotes refer to the last page
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1
12/27/00
IRHQ7110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Min
Typ Max Units
100
—
—
V
—
0.11
—
V/°C
—
—
2.0
1.4
—
—
—
—
—
—
—
—
0.62
0.60
4.0
—
25
250
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
11
4.0
5.5
13
16
23
15
—
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
270
110
23
—
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 3.0A ➃
VGS = 12V, ID = 1.9A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 1.9A ➃
VDS= 80V, VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 3.0A
VDS = 50V
Ω
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nC
VDD = 50V, ID = 3.0A,
VGS = 12V, RG = 7.5Ω
ns
nH
Measured from the center of
drain pad to center of source pad
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
3.0
12
1.2
173
863
Test Conditions
A
V
nS
nC
Tj = 25°C, IS = 3.0A, VGS = 0V ➃
Tj = 25°C, IF = 3.0A, di/dt ≥ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
10.4
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHQ7110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ (Per Die)
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-39)
Static Drain-to-Source ➃
On-State Resistance (LCC-28)
Diode Forward Voltage ➃
Units
Test Conditions
V
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS =0V
VGS = 12V, ID = 1.9A
0.75
Ω
VGS = 12V, ID = 1.9A
1.2
V
VGS = 0V, IS = 3.0A
300K to 1000K Rads (Si)2
Min
Max
Min
Max
100
2.0
—
—
—
—
—
4.0
100
-100
25
0.556
100
1.25
—
—
—
—
—
4.5
100
-100
25
0.706
nA
—
0.60
—
—
1.2
—
1. Part numbers IRHQ7110, IRHQ3110, IRHQ4110
2. Part number IRHQ8110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
Cu
Br
I
LET
MeV/(mg/cm2))
28.0
36.8
59.8
Energy
(MeV)
285
305
343
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43.0
100
100
100
100
70
39.0
100
80
70
50
—
32.6
50
40
35
—
—
120
VDS
100
80
Cu
60
Br
40
I
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHQ7110
Pre-Irradiation
100
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
1
20µs PULSE WIDTH
T = 25 C
1
10
1
5.0V
10
100
TJ = 25 ° C
TJ = 150 ° C
V DS = 50V
20µs PULSE WIDTH
7
9
11
13
15
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
5
10
100
Fig 2. Typical Output Characteristics
100
0.1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
°
J
0.1
0.1
VDS , Drain-to-Source Voltage (V)
10
20µs PULSE WIDTH
T = 150 C
°
J
0.1
0.1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 3.0A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
400
300
Ciss
200
C
oss
100
Crss
20
VGS , Gate-to-Source Voltage (V)
500
C, Capacitance (pF)
IRHQ7110
0
1
10
ID = 3.0A
3.7A
VDS = 80V
VDS = 50V
VDS = 20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
2
4
6
8
10
12
14
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
DS(on)
10
TJ = 150 ° C
1
10
100us
1ms
1
TJ = 25 ° C
V GS = 0 V
0.1
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.4
0.1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHQ7110
Pre-Irradiation
3.0
RD
V DS
VGS
2.5
D.U.T.
I D , Drain Current (A)
RG
+
-V DD
2.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.5
Fig 10a. Switching Time Test Circuit
1.0
VDS
0.5
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
100
10
D = 0.50
0.20
0.10
1
0.05
0.02
0.01
0.1
0.01
0.00001
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHQ7110
1 5V
D R IV E R
L
VD S
D .U .T.
RG
+
V
- DD
IA S
VGS
20V
tp
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
200
TOP
BOTTOM
150
100
50
0
25
V (B R )D S S
ID
1.3A
1.9A
3.0A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHQ7110
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
➄ Total Dose Irradiation with VGS Bias.
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L= 18.7mH,
Peak IL = 3.0A, VGS = 12V
➂ ISD ≤ 3.0A, di/dt ≤ 165A/µs,
VDD ≤ 100V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
➅ Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions — LCC-28
Q2
Q1
Q3
Q4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
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