DMP3026SFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) Max -30V 19mΩ @ VGS = -10V 45mΩ @ VGS = -4.5V ID Max TA = +25°C -8.6A -5.5A 0.6mm Profile – Ideal For Low Profile Applications Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: U-DFN2020-6 (Type F) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.007 grams (Approximate) ideal for high efficiency power management applications. Battery Management Application Power Management Functions DC-DC Converters U-DFN2020-6 (Type F) D G ESD PROTECTED Pin1 Top View Gate Protection Diode Pin Out Bottom View Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMP3026SFDF-7 DMP3026SFDF-13 Notes: Case U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMP3026SFDF Document number: DS38678 Rev. 1 - 2 Mar 3 6P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) YM 6P 2018 F Apr 4 2019 G May 5 Jun 6 1 of 8 www.diodes.com 2020 H Jul 7 2021 I Aug 8 Sep 9 2022 J Oct O 2023 K Nov N Dec D August 2016 © Diodes Incorporated DMP3026SFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Continuous Source-Drain Diode Current (Note 6) TA = +25°C Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Symbol VDSS VGSS Value -30 ±25 Units V V ID -8.6 -6.9 A IDM -10.3 -8.3 -50 IS -2.0 A IAS EAS -23 27 A mJ ID A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Steady State PD RθJA PD RθJA RθJC TJ, TSTG Value 0.71 0.47 178 125 2.0 1.3 62 43 7.4 -55 to +150 Units W °C/W W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. DMP3026SFDF Document number: DS38678 Rev. 1 - 2 2 of 8 www.diodes.com August 2016 © Diodes Incorporated DMP3026SFDF Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Zero Gate Voltage Drain Current TJ = +150°C (Note 9) Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS — — — — — -1 -100 ±10 V VGS = 0V, ID = -250μA µA VDS = -24V, VGS = 0V IGSS -30 — — — µA VGS = ±25V, VDS = 0V VGS(TH) -1 RDS(ON) — VSD — -3 19 45 54 -1.2 V Static Drain-Source On-Resistance — 15 28 34 -0.7 VDS = VGS, ID = -250μA VGS = -10V, ID = -4.5A VGS = -4.5V, ID = -3.5A VGS = -4.0V, ID = -3.0A VGS = 0V, IS = -1.0A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 1,204 154 112 16 19.6 9.2 4.3 3.9 5.3 23 34 26 10 3.3 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: IDSS mΩ V Test Condition pF VDS = -15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -15V, ID = -9.5A ns VDS = -15V, VGS = -10V, RG = 6Ω, ID = -9.5A ns nC IF = -9.5A, di/dt = 100A/μs 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP3026SFDF Document number: DS38678 Rev. 1 - 2 3 of 8 www.diodes.com August 2016 © Diodes Incorporated DMP3026SFDF 30 30 VGS = -10.0V VGS = -4.0V VGS = -5.0V 25 VGS = -4.5V ID , DRAIN CURRENT (A) I D, DRAIN CURRENT (A) 25 20 VGS = -3.5V 15 10 20 15 10 VGS = -3.0V 5 VDS = -5.0V T A = 150C 5 TA = 125 C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE(V) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VGS = -4.0V 0.06 VGS = -4.5V 0.04 VGS = -10.0V 0.02 0 0 5 10 15 20 25 6 Figure 2 Typical Transfer Characteristic Figure1 Typical Output Characteristic 0.1 0.08 T A = 25C TA = -55 C VGS = -2.5V 0.06 ID = -4.5A 0.05 0.04 0.03 ID = -3.5A 0.02 0.01 30 0 0 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.03 5 10 15 20 25 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2 VGS = -10V 1.8 TA = 150 C 0.025 RDS(ON), DRAIN-SOURCE ON-RESI STANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () T A = 85 C T A = 125C T A = 85 C 0.02 T A = 25C 0.015 T A = -55C 0.01 0.005 1.6 VGS = -10V I D = -4.5A 1.4 1.2 1 VGS = -4.5V 0.8 I D = -3.5A 0.6 0.4 0.2 0 0 5 10 15 20 25 30 ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP3026SFDF Document number: DS38678 Rev. 1 - 2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature 4 of 8 www.diodes.com August 2016 © Diodes Incorporated 0.06 3.5 V GS(TH), GATE THRESHOLD VOLTAGE (V) R DS(on ), DRAIN-SOURCE ON-RESISTANCE ( ) DMP3026SFDF 0.05 0.04 VGS = -4.5V I D = -3.5A 0.03 0.02 VGS = -10V 0.01 I D = -4.5A 0 -50 -25 0 25 50 75 100 125 3 2.5 ID = 250µA 2 1 0.5 0 -50 150 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Junction Temperature 10000 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature CT , JUNCTION CAPACITANCE (pF) 30 IS, SOURCE CURRENT (A) 25 20 T J= 150 C 15 TJ = 25 C T J= 125 C 10 T J= -55 C I D = 1mA 1.5 C iss 1000 Coss 100 Crss T J= 85 C 5 f=1MHz 10 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 1.5 10 15 20 25 30 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 10 100 R DS(on) Limited PW = 100µs 8 ID , DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) 5 VDS = -15V 6 ID = -9.5A 4 2 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 T J(m ax) = 150°C PW = 10ms T C = 25°C PW = 1ms V GS = -10V Single Pulse DUT on 1 * MRP Board 0 0 2 4 6 8 10 12 14 16 18 20 Qg , TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMP3026SFDF Document number: DS38678 Rev. 1 - 2 5 of 8 www.diodes.com 0.01 0.1 1 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 August 2016 © Diodes Incorporated DMP3026SFDF r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 175°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 0.001 DMP3026SFDF Document number: DS38678 Rev. 1 - 2 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 6 of 8 www.diodes.com 100 1000 August 2016 © Diodes Incorporated DMP3026SFDF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) A1 A A3 Seating Plane D e3 e4 k2 D2a E z2 D2 E2a E2 k1 z1 z(4x) e2 k e L b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) X3 C Y X Dimensions Y3 Y2 Y1 Y4 X1 Pin1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 X2 DMP3026SFDF Document number: DS38678 Rev. 1 - 2 7 of 8 www.diodes.com August 2016 © Diodes Incorporated DMP3026SFDF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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