IXYS DSSK28-01 Power schottky rectifier with common cathode Datasheet

DSSK 28-01A
DSSK 28-01AS
IFAV = 15 A
VRRM = 100 V
VF = 0.64 V
Power Schottky Rectifier
with common cathode
VRSM
VRRM
V
V
100
100
100
100
A
Type
C
A
TO-220 AB
(A-Type)
A
C
A
DSSK 28-01A
DSSK 28-01AS
TO-263 AB
(AS-Type)
C (TAB)
A
C (TAB)
A
A = Anode, C = Cathode , TAB = Cathode
Symbol
Conditions
Maximum Ratings
IFRMS
IFAV
TC = 155°C; rectangular, d = 0.5
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sinev
EAS
IAS = 9.5 A; L = 180 µH; TVJ = 25°C; non repetitive
IAR
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
(dv/dt)cr
A
A
230
A
10
mJ
1
A
5000
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
mounting torque (Version A only)
Weight
typical
Symbol
Conditions
V/µs
-55...+175
175
-55...+150
°C
°C
°C
105
W
0.4...0.6
2
Nm
g
Characteristic Values
typ.
max.
IR
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
VF
IF = 15 A;
IF = 15 A;
IF = 30 A;
RthJC
RthCH
35
2x15
TVJ = 125°C
TVJ = 25°C
TVJ = 125 °C
(Version A only)
0.5
0.5
5
mA
mA
0.64
0.79
0.76
V
V
V
1.4
K/W
K/W
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see IXYS databook 2001
IXYS reserves the right to change limits, conditions and dimensions.
© 2001 IXYS All rights reserved
223
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DSSK 28-01A
DSSK 28-01AS
100
1000
10
TVJ=175°C
mA
A
IR
IF
pF
1 150°C
CT
125°C
0.1 100°C
10
100
TVJ =
175°C
150°C
125°C
25°C
50°C
0.01
75°C
25°C
0.001
TVJ= 25°C
1
0.0
10
0.0001
0.2
0.4
0.8 V 1.0
0.6
0
20
40
60
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
40
A
35
30
60
80 V 100
VR
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
10000
P(AV)
d=0.5
A
DC
IFSM
20
20
d=
DC
0.5
0.33
0.25
0.17
0.08
15
15
10
10
5
5
0
1000
0
0
40
80
120
TC
160°C
Fig. 4 Average forward current IF(AV)
versus case temperature TC
ZthJC
40
W
25
K/W
20
25
30
IF(AV)
1
0
80 V 100
VR
VF
0
5
10
15
20 25
IF(AV)
30
A
100
10
100
1000 µs 10000
tP
Fig. 5 Forward power loss
characteristics
D=0.5
0.33
0.25
0.17
0.08
0.1
Single Pulse
(Thermal Resistance)
DSS 16-01A
0.01
0.0001
0.001
0.01
0.1
1
s
10
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
© 2001 IXYS All rights reserved
Note: All curves are per diode
2-2
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