AOSMD AOD480 N-channel enhancement mode field effect transistor Datasheet

AOD480
N-Channel Enhancement Mode Field Effect Transistor
General Description
1.4
Features
VGS=10V, ID=18A
The AOD480 uses advanced trench
technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOD480 is Pb-free (meets ROHS & Sony
259 specifications). AOD480L is a Green Product
ordering option. AOD480 and AOD480L are
electrically identical.
VDS (V) = 30V
ID = 25A (VGS = 10V)
RDS(ON) <23 mΩ (VGS = 10V)
RDS(ON) <36 mΩ (VGS = 4.5V)
193
UIS
18Tested!
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
V
Gate-Source Voltage
GS
Continuous Drain
Current G
TC=25°C
TC=100°C
C
Repetitive avalanche energy L=0.3mH
C
TC=25°C
Power Dissipation
B
Power Dissipation
A
Units
V
±20
V
25
Pulsed Drain Current C
Avalanche Current
Maximum
30
TA=25°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
IAR
13
A
EAR
25
mJ
45
33
2.5
W
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
17
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
B
Maximum Junction-to-Case
21
PD
TC=100°C
A
ID
IDM
RθJA
RθJC
Typ
16.7
40
3.6
°C
Max
25
50
4.5
Units
°C/W
°C/W
°C/W
AOD480
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
30
VDS=24V, V GS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, V DS=5V
30
TJ=55°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS=1A,V GS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=4.5V, ID=8A
VDS=5V, ID=8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
1
5
VGS=10V, ID=20A
RDS(ON)
Max
10
Units
V
0.004
IDSS
IS
Typ
µA
100
nA
1.6
2.5
V
19
23
24
30
29
36
A
mΩ
mΩ
24
0.77
621
S
1
V
4.3
A
820
pF
VGS=0V, VDS=15V, f=1MHz
118
VGS=0V, VDS=0V, f=1MHz
0.8
1.5
Ω
11.3
14
nC
5.7
7
nC
pF
85
VGS=10V, V DS=15V, ID=20A
2.1
Qgd
Gate Drain Charge
3
tD(on)
Turn-On DelayTime
4.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
VGS=10V, V DS=15V, R L=0.75Ω,
RGEN=3Ω
pF
nC
nC
6.5
ns
3.1
5
ns
15.1
23
ns
2.7
5
ns
IF=20A, dI/dt=100A/µs
15.5
21
IF=20A, dI/dt=100A/µs
7.1
10
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
I. Revision 0: May 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD488
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
5V
10V
25
6V
12
4V
ID(A)
ID (A)
20
VDS=5V
16
4.5V
15
8
10
125°C
3.5V
4
5
25°C
VGS=3V
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
35
1.6
Normalized On-Resistance
VGS=4.5V
30
RDS(ON) (mΩ)
2.5
25
20
VGS=10V
VGS=10V
ID=20A
1.4
VGS=4.5V
ID=8A
1.2
1
0.8
15
0
5
10
15
0.6
20
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
60
ID=20A
1.0E+00
1.0E-01
40
IS (A)
RDS(ON) (mΩ)
50
125°C
125°C
1.0E-02
25°C
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
AS CRITICAL
30
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
20
1.0E-04
FUNCTIONS AND RELIABILITY25°C
WITHOUT NOTICE.
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOD488
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
800
VDS=15V
ID=20A
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
600
1.4
400
Coss
0
3
6
9
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
193
18
1000
200
TJ(Max)=175°C, T C=25°C
160
10µs
RDS(ON)
limited
100µs
DC
1ms
Power (W)
100
10
593
830
Crss
0
0
ID (Amps)
494
692
200
TJ(Max)=175°C
TC=25°C
120
80
40
1
0
0.0001
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0.001
0.01
59 0.1
1
10
Pulse 142
Width (s)
30Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=T on/T
TJ,PK=T C+PDM.ZθJC.RθJC
RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOD488
35
50
30
40
Power Dissipation (W)
ID(A), Peak Avalanche Current
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TA=25°C
25
20
15
10
0.000001
0.00001
0.0001
30
1.4
20
494
692
10
593
830
0
0.001
0
25
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
193
18
50
30
TA=25°C
20
Power (W)
Current rating ID(A)
40
30
20
10
10
0
0.01
0
0
25
50
75
100
125
150
175
0.1
1
59
142 10
100
1000
Pulse Width (s)
30
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note B)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
0.1
PD
Ton
1
T
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
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