AOD480 N-Channel Enhancement Mode Field Effect Transistor General Description 1.4 Features VGS=10V, ID=18A The AOD480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD480 is Pb-free (meets ROHS & Sony 259 specifications). AOD480L is a Green Product ordering option. AOD480 and AOD480L are electrically identical. VDS (V) = 30V ID = 25A (VGS = 10V) RDS(ON) <23 mΩ (VGS = 10V) RDS(ON) <36 mΩ (VGS = 4.5V) 193 UIS 18Tested! TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage V Gate-Source Voltage GS Continuous Drain Current G TC=25°C TC=100°C C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation A Units V ±20 V 25 Pulsed Drain Current C Avalanche Current Maximum 30 TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. IAR 13 A EAR 25 mJ 45 33 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 17 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case 21 PD TC=100°C A ID IDM RθJA RθJC Typ 16.7 40 3.6 °C Max 25 50 4.5 Units °C/W °C/W °C/W AOD480 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 VDS=24V, V GS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, V DS=5V 30 TJ=55°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=8A VDS=5V, ID=8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 1 5 VGS=10V, ID=20A RDS(ON) Max 10 Units V 0.004 IDSS IS Typ µA 100 nA 1.6 2.5 V 19 23 24 30 29 36 A mΩ mΩ 24 0.77 621 S 1 V 4.3 A 820 pF VGS=0V, VDS=15V, f=1MHz 118 VGS=0V, VDS=0V, f=1MHz 0.8 1.5 Ω 11.3 14 nC 5.7 7 nC pF 85 VGS=10V, V DS=15V, ID=20A 2.1 Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 4.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=10V, V DS=15V, R L=0.75Ω, RGEN=3Ω pF nC nC 6.5 ns 3.1 5 ns 15.1 23 ns 2.7 5 ns IF=20A, dI/dt=100A/µs 15.5 21 IF=20A, dI/dt=100A/µs 7.1 10 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. I. Revision 0: May 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 5V 10V 25 6V 12 4V ID(A) ID (A) 20 VDS=5V 16 4.5V 15 8 10 125°C 3.5V 4 5 25°C VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 35 1.6 Normalized On-Resistance VGS=4.5V 30 RDS(ON) (mΩ) 2.5 25 20 VGS=10V VGS=10V ID=20A 1.4 VGS=4.5V ID=8A 1.2 1 0.8 15 0 5 10 15 0.6 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=20A 1.0E+00 1.0E-01 40 IS (A) RDS(ON) (mΩ) 50 125°C 125°C 1.0E-02 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY25°C WITHOUT NOTICE. 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 800 VDS=15V ID=20A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 600 1.4 400 Coss 0 3 6 9 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 193 18 1000 200 TJ(Max)=175°C, T C=25°C 160 10µs RDS(ON) limited 100µs DC 1ms Power (W) 100 10 593 830 Crss 0 0 ID (Amps) 494 692 200 TJ(Max)=175°C TC=25°C 120 80 40 1 0 0.0001 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 59 0.1 1 10 Pulse 142 Width (s) 30Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=T on/T TJ,PK=T C+PDM.ZθJC.RθJC RθJC=4.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD488 35 50 30 40 Power Dissipation (W) ID(A), Peak Avalanche Current TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TA=25°C 25 20 15 10 0.000001 0.00001 0.0001 30 1.4 20 494 692 10 593 830 0 0.001 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 193 18 50 30 TA=25°C 20 Power (W) Current rating ID(A) 40 30 20 10 10 0 0.01 0 0 25 50 75 100 125 150 175 0.1 1 59 142 10 100 1000 Pulse Width (s) 30 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 PD Ton 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000