Panasonic DMA2610H0R Silicon pnp epitaxial planar type Datasheet

DMA2610H
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
 Features
 Low collector-emitter saturation voltage VCE(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: R4
 Basic Part Number
Dual DRA2123Y (Common emitter)
 Packaging
DMA2610H0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Tr1
Tr2
Overall
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–50
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
°C
Operating ambient temperature
Topr
–40 to +85
°C
Storage temperature
Tstg
–55 to +150
°C
4: Collector (Tr2)
5: Collector (Tr1)
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
Panasonic
JEITA
Code
Mini5-G3-B
SC-74A
MO-178
(C1)
5
(C2)
4
Tr2
Tr1
R2
R2
R1
R1
1
(B1)
2
(E)
Resistance value
3
(B2)
R1
2.2
kΩ
R2
10
kΩ
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–50
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –50 V, IE = 0
– 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = –50 V, IB = 0
– 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = –6 V, IC = 0
–1.0
mA
Forward current transfer ratio
hFE
VCE = –10 V, IC = –5 mA
30
hFE
(Small/Large)
VCE = –10 V, IC = –5 mA
0.50
hFE ratio *1
Collector-emitter saturation voltage
VCE(sat)
IC = –10 mA, IB = – 0.5 mA
Input voltage (ON)
VI(on)
VCE = – 0.2 V, IC = –5 mA
Input voltage (OFF)
VI(off)
VCE = –5 V, IC = –100 µA

0.99

– 0.25
–1.1
V
V
– 0.5
V
Input resistance
R1
–30%
2.2
+30%
kΩ
Resistance ratio
R1 / R2
0.17
0.22
0.27

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
Publication date: September 2013
Ver. DED
1
DMA2610H
DMA2610H_IC-VCE
DMA2610H_PT-Ta
PT  Ta
IB = −700 µA
−100
250
200
150
100
−600 µA
−80
−500 µA
−60
−400 µA
−300 µA
−40
−200 µA
−20
50
0
40
80
120
160
0
200
−100 µA
0
−2
−4
−6
−8
−10
VCE = −10 V
250
150
−40°C
50
−1
IC / IB = 20
−100
DMA2610H_VIN-IO
IO  VIN
−10
−10
Collector current IC (mA)
DMA2610H_IO-VIN
VCE(sat)  IC
25°C
100
0
− 0.1
−12
Ta = 85°C
200
Collector-emitter voltage VCE (V)
DMA2610H_VCEsat-IC
−10
Forward current transfer ratio hFE
300
Collector current IC (mA)
VIN  IO
−100
VO = −5 V
VO = − 0.2 V
−1
−1
25°C
−10−1
Ta = 85°C
− 0.1
− 0.01
− 0.1
Output current IO (mA)
Ta = 85°C
−40°C
Input voltage VIN (V)
Total power dissipation PT (mW)
300
Ta = 25°C
Ambient temperature Ta (°C)
Collector-emitter saturation voltage VCE(sat) (V)
hFE  IC
−120
350
0
DMA2610H_hFE-IC
IC  VCE
−40°C
−10−2
−10
25°C
Ta = −40°C
−1
85°C
25°C
−1
−10
Collector current IC (mA)
−100
−10−3
0
− 0.5
−1.0
−1.5
Input voltage VIN (V)
Ver. DED
−2.0
− 0.1
− 0.1
−1
−10
−100
Output current IO (mA)
2
DMA2610H
Mini5-G3-B
Unit: mm
 Land Pattern (Reference) (Unit: mm)
Ver. DED
3
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semiconductors described in this book
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