DMA2610H Silicon PNP epitaxial planar type Unit: mm For digital circuits Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: R4 Basic Part Number Dual DRA2123Y (Common emitter) Packaging DMA2610H0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Tr2 Overall Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –50 V Collector-emitter voltage (Base open) VCEO –50 V Collector current IC –100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +150 °C 4: Collector (Tr2) 5: Collector (Tr1) 1: Base (Tr1) 2: Emitter (Common) 3: Base (Tr2) Panasonic JEITA Code Mini5-G3-B SC-74A MO-178 (C1) 5 (C2) 4 Tr2 Tr1 R2 R2 R1 R1 1 (B1) 2 (E) Resistance value 3 (B2) R1 2.2 kΩ R2 10 kΩ Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 –1.0 mA Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA 30 hFE (Small/Large) VCE = –10 V, IC = –5 mA 0.50 hFE ratio *1 Collector-emitter saturation voltage VCE(sat) IC = –10 mA, IB = – 0.5 mA Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA 0.99 – 0.25 –1.1 V V – 0.5 V Input resistance R1 –30% 2.2 +30% kΩ Resistance ratio R1 / R2 0.17 0.22 0.27 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Ratio between 2 elements Publication date: September 2013 Ver. DED 1 DMA2610H DMA2610H_IC-VCE DMA2610H_PT-Ta PT Ta IB = −700 µA −100 250 200 150 100 −600 µA −80 −500 µA −60 −400 µA −300 µA −40 −200 µA −20 50 0 40 80 120 160 0 200 −100 µA 0 −2 −4 −6 −8 −10 VCE = −10 V 250 150 −40°C 50 −1 IC / IB = 20 −100 DMA2610H_VIN-IO IO VIN −10 −10 Collector current IC (mA) DMA2610H_IO-VIN VCE(sat) IC 25°C 100 0 − 0.1 −12 Ta = 85°C 200 Collector-emitter voltage VCE (V) DMA2610H_VCEsat-IC −10 Forward current transfer ratio hFE 300 Collector current IC (mA) VIN IO −100 VO = −5 V VO = − 0.2 V −1 −1 25°C −10−1 Ta = 85°C − 0.1 − 0.01 − 0.1 Output current IO (mA) Ta = 85°C −40°C Input voltage VIN (V) Total power dissipation PT (mW) 300 Ta = 25°C Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) hFE IC −120 350 0 DMA2610H_hFE-IC IC VCE −40°C −10−2 −10 25°C Ta = −40°C −1 85°C 25°C −1 −10 Collector current IC (mA) −100 −10−3 0 − 0.5 −1.0 −1.5 Input voltage VIN (V) Ver. DED −2.0 − 0.1 − 0.1 −1 −10 −100 Output current IO (mA) 2 DMA2610H Mini5-G3-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. DED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. 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