Renesas HAT2099H-EL-E Silicon n channel power mos fet power switching Datasheet

HAT2099H
Silicon N Channel Power MOS FET
Power Switching
REJ03G1187-0500
(Previous: ADE-208-1432C)
Rev.5.00
Sep 07, 2005
Features
•
•
•
•
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS (on) = 2.9 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
12
1, 2, 3
4
5
34
S S S
1 2 3
Rev.5.00 Sep 07, 2005 page 1 of 7
Source
Gate
Drain
HAT2099H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
Value
30
Unit
V
VGSS
ID
±20
50
V
A
200
50
A
A
ID (pulse)
IDR
Note 1
Note 3
Avalanche current
Avalanche energy
IAP
Note 3
EAR
5
2.5
A
mJ
Channel dissipation
Channel temperature
Pch
Tch
Note 2
30
150
W
°C
–55 to +150
°C
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
30
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IGSS
IDSS
—
—
—
—
±10
1
µA
µA
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
1.0
—
—
2.9
2.5
3.7
V
mΩ
VDS = 10 V, ID = 1 mA
Note 4
ID = 25 A, VGS = 10 V
Forward transfer admittance
RDS (on)
|yfs|
—
39
5.0
65
7.3
—
mΩ
S
ID = 25 A, VGS = 4.5 V
Note 4
ID = 25 A, VDS = 10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
4750
1180
—
—
pF
pF
Reverse transfer capacitance
Total gate charge
Crss
Qg
—
—
650
75
—
—
pF
nC
VDS = 10 V
VGS = 0
f = 1 MHz
Gate to source charge
Gate to drain charge
Qgs
Qgd
—
—
16
14
—
—
nC
nC
Turn-on delay time
Rise time
td (on)
tr
—
—
26
60
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
85
26
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
0.85
60
0.98
—
V
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Note:
4. Pulse test
Rev.5.00 Sep 07, 2005 page 2 of 7
Test Conditions
Note 4
VDD = 10 V
VGS = 10 V
ID = 50 A
VGS = 10 V, ID = 25 A
VDD ≅ 10 V
RL = 0.4 Ω
Rg = 4.7 Ω
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0
diF/dt = 50 A/µs
Note 4
HAT2099H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
ID (A)
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
10
µ
10
0µ s
1
PW
s
ms
=1
DC
0m
Op
s
era
tio
n
Operation in
this area is
limited by RDS (on)
100
10
1
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1
0
0
50
100
150
Case Temperature
200
Tc (°C)
ID (A)
ID (A)
3.5 V
Drain Current
Drain Current
10
40
0
2
4
6
8
Drain to Source Voltage
Tc = 75°C
VDS (V)
ID = 20 A
0.04
10 A
5A
0
0
4
8
12
Gate to Source Voltage
Rev.5.00 Sep 07, 2005 page 3 of 7
16
20
VGS (V)
1
2
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
0.08
0
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.16
–25°C
10
10
Pulse Test
25°C
20
0
0
VDS (on) (V)
VDS (V)
30
VGS = 3 V
Drain to Source Voltage
100
30
VDS = 10 V
Pulse Test
Pulse Test
20
0.12
10
Typical Transfer Characteristics
30
0.20
3
50
10 V
4.5 V
40
1
Drain to Source Voltage
Typical Output Characteristics
50
0.3
100
Pulse Test
50
20
10
VGS = 4.5 V
5
2
10 V
1
0.1 0.2 0.5 1
2
5
10 20
Drain Current
ID (A)
50 100
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
HAT2099H
20
Pulse Test
16
12
ID = 5 A, 10 A
20 A
8
VGS = 4.5 V
4
5 A, 10 A, 20 A
10 V
0
–40
0
40
80
120
Case Temperature
Tc
160
100
Tc = –25°C
30
75°C
10
25°C
3
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
30
100
10000
Ciss
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10
Typical Capacitance vs.
Drain to Source Voltage
1000
200
100
50
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
20
10
0.1
0.3
1
3
10
Reverse Drain Current
30
3000
Coss
1000
Crss
300
100
30
10
100
VGS = 0
f = 1 MHz
0
10
40
16
30
VDD = 25 V
10 V
5V
VDS
12
8
20
10
4
VDD = 25 V
10 V
5V
0
0
40
80
Gate Charge
Rev.5.00 Sep 07, 2005 page 4 of 7
120
160
Qg (nc)
40
50
0
200
500
Switching Time t (ns)
VGS
VGS (V)
20
ID = 50 A
30
Switching Characteristics
Gate to Source Voltage
50
20
Drain to Source Voltage VDS (V)
IDR (A)
Dynamic Input Characteristics
VDS (V)
3
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
1
200
100
td(off)
tf
50
tr
td(on)
20
10
5
0.1 0.2
VGS = 10 V, VDS = 10 V
Rg = 4.7 µs, duty ≤ 1 %
0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
HAT2099H
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IF (A)
50
40
10 V
VGS = 0
5V
30
20
10
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
5
IAP = 5 A
VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
4
3
2
1
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSDF (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
0.1
0.05
D=
PDM
0.02
1
0.0
0.03
1s
t
ho
0.01
10 µ
pu
lse
PW
T
PW
T
100 µ
10 m
1m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
15 V
50 Ω
0
Rev.5.00 Sep 07, 2005 page 5 of 7
VDD
HAT2099H
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 10 V
10%
10%
90%
td(on)
Rev.5.00 Sep 07, 2005 page 6 of 7
10%
RL
tr
90%
td(off)
tf
HAT2099H
Package Dimensions
JEITA Package Code
RENESAS Code
SC-100
PTZZ0005DA-A
Package Name
MASS[Typ.]
LFPAK
Unit: mm
0.080g
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0° – 8°
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
HAT2099H-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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