HAT2099H Silicon N Channel Power MOS FET Power Switching REJ03G1187-0500 (Previous: ADE-208-1432C) Rev.5.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 2.9 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 12 1, 2, 3 4 5 34 S S S 1 2 3 Rev.5.00 Sep 07, 2005 page 1 of 7 Source Gate Drain HAT2099H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Value 30 Unit V VGSS ID ±20 50 V A 200 50 A A ID (pulse) IDR Note 1 Note 3 Avalanche current Avalanche energy IAP Note 3 EAR 5 2.5 A mJ Channel dissipation Channel temperature Pch Tch Note 2 30 150 W °C –55 to +150 °C Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25 °C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Tstg Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS 30 ±20 — — — — V V ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 IGSS IDSS — — — — ±10 1 µA µA VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) 1.0 — — 2.9 2.5 3.7 V mΩ VDS = 10 V, ID = 1 mA Note 4 ID = 25 A, VGS = 10 V Forward transfer admittance RDS (on) |yfs| — 39 5.0 65 7.3 — mΩ S ID = 25 A, VGS = 4.5 V Note 4 ID = 25 A, VDS = 10 V Input capacitance Output capacitance Ciss Coss — — 4750 1180 — — pF pF Reverse transfer capacitance Total gate charge Crss Qg — — 650 75 — — pF nC VDS = 10 V VGS = 0 f = 1 MHz Gate to source charge Gate to drain charge Qgs Qgd — — 16 14 — — nC nC Turn-on delay time Rise time td (on) tr — — 26 60 — — ns ns Turn-off delay time Fall time td (off) tf — — 85 26 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.85 60 0.98 — V ns Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Note: 4. Pulse test Rev.5.00 Sep 07, 2005 page 2 of 7 Test Conditions Note 4 VDD = 10 V VGS = 10 V ID = 50 A VGS = 10 V, ID = 25 A VDD ≅ 10 V RL = 0.4 Ω Rg = 4.7 Ω IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 diF/dt = 50 A/µs Note 4 HAT2099H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 ID (A) 30 Drain Current Channel Dissipation Pch (W) 40 20 10 10 µ 10 0µ s 1 PW s ms =1 DC 0m Op s era tio n Operation in this area is limited by RDS (on) 100 10 1 0.1 Tc = 25°C 1 shot Pulse 0.01 0.1 0 0 50 100 150 Case Temperature 200 Tc (°C) ID (A) ID (A) 3.5 V Drain Current Drain Current 10 40 0 2 4 6 8 Drain to Source Voltage Tc = 75°C VDS (V) ID = 20 A 0.04 10 A 5A 0 0 4 8 12 Gate to Source Voltage Rev.5.00 Sep 07, 2005 page 3 of 7 16 20 VGS (V) 1 2 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 0.08 0 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.16 –25°C 10 10 Pulse Test 25°C 20 0 0 VDS (on) (V) VDS (V) 30 VGS = 3 V Drain to Source Voltage 100 30 VDS = 10 V Pulse Test Pulse Test 20 0.12 10 Typical Transfer Characteristics 30 0.20 3 50 10 V 4.5 V 40 1 Drain to Source Voltage Typical Output Characteristics 50 0.3 100 Pulse Test 50 20 10 VGS = 4.5 V 5 2 10 V 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) HAT2099H 20 Pulse Test 16 12 ID = 5 A, 10 A 20 A 8 VGS = 4.5 V 4 5 A, 10 A, 20 A 10 V 0 –40 0 40 80 120 Case Temperature Tc 160 100 Tc = –25°C 30 75°C 10 25°C 3 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 30 100 10000 Ciss 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 10 Typical Capacitance vs. Drain to Source Voltage 1000 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 20 10 0.1 0.3 1 3 10 Reverse Drain Current 30 3000 Coss 1000 Crss 300 100 30 10 100 VGS = 0 f = 1 MHz 0 10 40 16 30 VDD = 25 V 10 V 5V VDS 12 8 20 10 4 VDD = 25 V 10 V 5V 0 0 40 80 Gate Charge Rev.5.00 Sep 07, 2005 page 4 of 7 120 160 Qg (nc) 40 50 0 200 500 Switching Time t (ns) VGS VGS (V) 20 ID = 50 A 30 Switching Characteristics Gate to Source Voltage 50 20 Drain to Source Voltage VDS (V) IDR (A) Dynamic Input Characteristics VDS (V) 3 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 1 200 100 td(off) tf 50 tr td(on) 20 10 5 0.1 0.2 VGS = 10 V, VDS = 10 V Rg = 4.7 µs, duty ≤ 1 % 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 HAT2099H Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IF (A) 50 40 10 V VGS = 0 5V 30 20 10 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 5 IAP = 5 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 4 3 2 1 0 25 50 75 100 125 150 Channel Temperature Tch (°C) VSDF (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 4.17°C/W, Tc = 25°C 0.1 0.05 D= PDM 0.02 1 0.0 0.03 1s t ho 0.01 10 µ pu lse PW T PW T 100 µ 10 m 1m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin 15 V 50 Ω 0 Rev.5.00 Sep 07, 2005 page 5 of 7 VDD HAT2099H Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Rg Vin Vout Vin 10 V VDS = 10 V 10% 10% 90% td(on) Rev.5.00 Sep 07, 2005 page 6 of 7 10% RL tr 90% td(off) tf HAT2099H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A Package Name MASS[Typ.] LFPAK Unit: mm 0.080g 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 0° – 8° +0.25 +0.05 0.20 –0.03 0.6 –0.20 1.3 Max 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name Quantity Shipping Container HAT2099H-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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