MOTOROLA MRF5007R1 N-channel broadband rf power fet Datasheet

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by MRF5007/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
The MRF5007 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 Volt portable FM equipment.
• Guaranteed Performance at 512 MHz, 7.5 Volts
Output Power = 7.0 Watts
Power Gain = 10 dB Min
Efficiency = 50% Min
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Overdrive
• True Surface Mount Package
7.0 W, 7.5 Vdc
512 MHz
N–CHANNEL
BROADBAND
RF POWER FET
• Available in Tape and Reel by Adding R1 Suffix to Part Number.
R1 Suffix = 500 Units per 16 mm, 7 inch Reel.
CASE 430B–02, Style 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
25
Vdc
Drain–Gate Voltage (RGS = 1.0 Meg Ohm)
VDGR
25
Vdc
VGS
± 20
Vdc
Drain Current — Continuous
ID
4.5
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
25
0.14
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
3.8
°C/W
Gate–Source Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1995
MRF5007 MRF5007R1
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
25
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
IDSS
—
—
1.0
mAdc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
—
1.0
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mAdc)
VGS(th)
1.25
2.2
3.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
—
—
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1.0 Adc)
gfs
0.9
—
—
S
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
32
—
pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
63
—
pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1.0 MHz)
Crss
10
13
16
pF
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 2.5 mAdc)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 7.0 W, IDQ = 75 mA)
f = 512 MHz
Gps
10
11.5
—
dB
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 7.0 W, IDQ = 75 mA)
f = 512 MHz
η
50
55
—
%
B1
R3
VGG
C8
+
C10
C9
C11
+
C13
C12
R4
VDD
R2
L2
N1
RF
INPUT
Z1
C1
Z2
Z3
R1
Z4
Z6
L1
Z5
Z7
C5
C2
B1
C1, C7
C2, C6
C3
C4
C5
C8, C13
C9, C12
C10
C11
L1
L2
N1, N2
R1
R2
C3
C4
Z8
Z9
C6
Z10
C7
N2
RF
OUTPUT
DUT
Fair Rite Products Short Ferrite Bead (2743021446)
100 pF, 100 mil Chip
0–20 pF, Johanson
47 pF, Miniature Clamped Mica Capacitor
16 pF, Miniature Clamped Mica Capacitor
21 pF, Miniature Clamped Mica Capacitor
10 µF, 50 V, Electrolytic
0.1 µF, Chip Capacitor
1000 pF, 100 mil Chip
140 pF, 100 mil Chip
7 Turns, 0.076″ ID, #24 AWG Enamel
5 Turns, 0.126″ ID, #20 AWG Enamel
Type N Flange Mount
39 Ω, 1/4 W Carbon
30 Ω, 0.1 W Chip
R3
1.0 kΩ, 0.1 W Chip
R4
1.1 MΩ, 1/4 W Carbon
Z1, Z10 0.594″ x 0.08″ Microstrip
Z2
0.811″ x 0.08″ Microstrip
Z3
0.270″ x 0.08″ Microstrip
Z4
0.122″ x 0.08″ Microstrip
Z5
0.303″ x 0.08″ Microstrip
Z6
0.211″ x 0.08″ Microstrip
Z7
0.084″ x 0.08″ Microstrip
Z8
0.060″ x 0.08″ Microstrip
Z9
1.343″ x 0.08″ Microstrip
Board — Glass Teflon, 31 mils
Note: BeCu part locators (0.147″ x 0.093″)
Note: soldered onto Z5 and Z6
Figure 1. 512 MHz Narrowband Test Circuit
MRF5007 MRF5007R1
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
10
12
10
P out , OUTPUT POWER (WATTS)
P out , OUTPUT POWER (WATTS)
Pin = 700 mW
f = 400 MHz
470 MHz
520 MHz
8
6
4
2
VDD = 7.5 Vdc
IDQ = 75 mA
300 mW
8
6
IDQ = 75 mA
f = 400 MHz
4
0
0.5
1
1.5
Pin, INPUT POWER (WATTS)
6
2
Figure 2. Output Power versus Input Power
Pin = 700 mW
500 mW
P out , OUTPUT POWER (WATTS)
P out , OUTPUT POWER (WATTS)
10
10
Pin = 700 mW
300 mW
8
6
IDQ = 75 mA
f = 470 MHz
500 mW
8
300 mW
6
IDQ = 75 mA
f = 520 MHz
4
4
6
7
8
9
VDD, SUPPLY VOLTAGE (VOLTS)
6
10
Figure 4. Output Power versus Supply Voltage
7
8
9
VDD, SUPPLY VOLTAGE (VOLTS)
10
Figure 5. Output Power versus Supply Voltage
4
I D, DRAIN CURRENT (AMPS)
10
P out , OUTPUT POWER (WATTS)
7
8
9
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 3. Output Power versus Supply Voltage
10
f = 400 MHz
8
520 MHz
TYPICAL DEVICE SHOWN
VGS(th) = 1.6 V
6
VDD = 7.5 Vdc
Pin = 0.7 W
4
500 mW
0
1
2
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Gate Voltage
MOTOROLA RF DEVICE DATA
3
2
TYPICAL DEVICE SHOWN
1
VDS = 10 Vdc
3
0
0
1
2
3
4
VGS, GATE–SOURCE VOLTAGE (VOLTS)
5
Figure 7. Drain Current versus Gate Voltage
MRF5007 MRF5007R1
3
VGS, GATE–SOURCE VOLTAGE (NORMALIZED)
150
VGS = 0 Vdc
f = 1 MHz
C, CAPACITANCE (pF)
125
100
75
Coss
50
Ciss
25
0
Crss
0
5
10
15
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
20
Figure 8. Capacitance versus Voltage
1.06
IDQ = 2.1 A
1.04
1.5 A
1.02
900 mA
1.00
0.98
300 mA
0.96
0.94
0.92
– 25
VDD = 7.5 Vdc
0
75 mA
25
50
75
100
TC, CASE TEMPERATURE (°C)
125
150
Figure 9. Gate–Source Voltage versus
Case Temperature
I D, DRAIN CURRENT (AMPS)
5
4
3
TC = 25°C
2
1
0
1
10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
100
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
MRF5007 MRF5007R1
4
MOTOROLA RF DEVICE DATA
520
460
ZOL*
f = 400 MHz
VDD = 7.5 Vdc, IDQ = 75 mA, Pout = 7.0 W
Zo = 10 Ω
520
460
Zin
f = 400 MHz
f
MHz
Zin
Ohms
ZOL*
Ohms
400
1.4 – j5.4
1.0 – j0.6
430
1.4 – j4.5
0.9 – j0.5
460
1.3 – j4.2
0.9 – j0.3
490
1.2 – j4.0
0.9 – j0.1
520
1.0 – j3.7
0.9 + j0.1
Zin = Conjugate of source impedance with parallel 39 Ω
Zin = resistor and 47 pF capacitor in series with gate.
ZOL* = Conjugate of the load impedance at given output
ZOL* = power, voltage, frequency, and ηD > 50%.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 11. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF5007 MRF5007R1
5
Table 1. Common Source Scattering Parameters (VDS = 7.5 Vdc)
ID = 75 mA
f
S11
S21
S12
S22
MHz
|S11|
6φ
|S21|
6φ
|S12|
6φ
|S22|
6φ
50
0.75
– 132
6.05
103
0.08
15
0.76
– 156
100
0.73
– 152
3.13
88
0.08
1
0.80
– 166
200
0.75
– 162
1.52
71
0.08
– 13
0.83
– 171
300
0.78
– 164
0.95
59
0.07
– 22
0.85
– 172
400
0.81
– 166
0.66
49
0.06
– 29
0.88
– 173
500
0.83
– 167
0.49
40
0.06
– 35
0.90
– 174
700
0.87
– 170
0.30
27
0.05
– 43
0.93
– 175
850
0.89
– 171
0.22
19
0.04
– 46
0.94
– 177
1000
0.91
– 173
0.17
13
0.03
– 48
0.96
– 178
1200
0.92
– 174
0.13
7
0.03
– 48
0.97
– 180
ID = 500 mA
f
S11
S21
S12
S22
MHz
|S11|
6φ
|S21|
6φ
|S12|
6φ
|S22|
6φ
50
0.88
– 152
6.89
100
0.03
12
0.87
– 172
100
0.87
– 166
3.50
91
0.03
4
0.88
– 176
200
0.87
– 172
1.74
81
0.03
–2
0.89
– 178
300
0.87
– 175
1.15
74
0.03
–6
0.89
– 178
400
0.88
– 176
0.84
68
0.03
–8
0.90
– 179
500
0.88
– 176
0.66
63
0.03
– 11
0.90
– 179
700
0.89
– 177
0.45
53
0.03
– 14
0.92
– 179
850
0.90
– 178
0.35
46
0.03
– 15
0.92
– 180
1000
0.90
– 178
0.28
40
0.02
– 15
0.93
179
1200
0.91
– 179
0.22
34
0.02
– 14
0.94
179
ID = 1.5 A
f
S11
S21
S12
S22
MHz
|S11|
6φ
|S21|
6φ
|S12|
6φ
|S22|
6φ
50
0.91
– 155
6.67
99
0.03
11
0.91
– 174
100
0.91
– 167
3.38
91
0.03
5
0.92
– 177
200
0.91
– 174
1.69
83
0.03
1
0.92
– 179
300
0.91
– 176
1.12
77
0.03
–1
0.92
– 179
400
0.91
– 177
0.83
72
0.02
–2
0.93
– 180
500
0.91
– 177
0.65
67
0.02
–3
0.93
180
700
0.92
– 178
0.45
57
0.02
–4
0.93
179
850
0.92
– 178
0.36
51
0.02
–4
0.94
179
1000
0.93
– 179
0.29
46
0.02
–3
0.94
178
1200
0.93
– 179
0.23
39
0.02
0
0.95
177
MRF5007 MRF5007R1
6
MOTOROLA RF DEVICE DATA
DESIGN CONSIDERATIONS
The MRF5007 is a common–source, RF power, N–Channel enhancement mode, Metal–Oxide Semiconductor
Field–Effect Transistor (MOSFET). Motorola RF MOSFETs
feature a vertical structure with a planar design. Motorola
Application Note AN211A, “FETs in Theory and Practice,” is
suggested reading for those not familiar with the construction and characteristics of FETs.
This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of RF power MOSFETs include
high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from
drain–to–source (Cds). These capacitances are characterized
as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter–terminal capacitances and those given on data sheets are
shown below. The Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
DRAIN
Cgd
GATE
Cds
Cgs
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
SOURCE
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full–on condition. This on–resistance, RDS(on), occurs
in the linear region of the output characteristic and is specified at a specific gate–source voltage and drain current. The
drain–source voltage under these conditions is termed
V DS(on). For MOSFETs, V DS(on) has a positive temperature
MOTOROLA RF DEVICE DATA
coefficient at high temperatures because it contributes to the
power dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high — on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
V GS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated V GS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended
with appropriate RF decoupling.
Using a resistor to keep the gate–to–source impedance
low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled
to the gate through the parasitic gate–drain capacitance. If
the gate–to–source impedance and the rate of voltage
change on the drain are both high, then the signal coupled to
the gate may be large enough to exceed the gate–threshold
voltage and turn the device on.
DC BIAS
Since the MRF5007 is an enhancement mode FET, drain
current flows only when the gate is at a higher potential than
the source. See Figure 7 for a typical plot of drain current
versus gate voltage. RF power FETs operate optimally with
a quiescent drain current (I DQ), whose value is application
dependent. The MRF5007 was characterized at IDQ = 75
mA, which is the suggested value of bias current for typical
applications. For special applications such as linear amplification, I DQ may have to be selected to optimize the critical
parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of the MRF5007 may be controlled to some
degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. Figure 6 is an example
of output power variation with gate–source bias voltage. This
characteristic is very dependent on frequency and load line.
MRF5007 MRF5007R1
7
MOUNTING
The specified maximum thermal resistance of 7.0°C/W assumes a majority of the 0.137″ x 0.185″ source contact on
the back side of the package is in good contact with an appropriate heat sink. In the test fixture shown in Figure 1, the
device is clamped directly to a copper pedestal. As with all
RF power devices, the goal of the thermal design should be
to minimize the temperature at the back side of the package.
It is recomended that this temperature not exceed 100°C for
any operating condition. Contact customer service for additional information on thermal considerations for mounting.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for the MRF5007. For examples see Motorola Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.” Both
small–signal S–parameters and large–signal impedances
MRF5007 MRF5007R1
8
are provided. While the S–parameters will not produce an
exact design solution for high power operation, they do yield
a good first approximation. This is an additional advantage of
RF power MOSFETs.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of the
MRF5007 yields a device capable of self oscillation. Stability
may be achieved by techniques such as drain loading, input
shunt resistive loading, or output to input feedback. The RF
test fixture implements a parallel resistor and capacitor in series with the gate and has a load line selected for a higher
efficiency, lower gain, and more stable operating region.
Two port stability analysis with the MRF5007 S–parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola
Application Note AN215A, “RF Small–Signal Design Using
Two–Port Parameters,” for a discussion of two port network
theory and stability.
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A
N
ÉÉÉÉ
ÉÉ É
ÉÉÉÉ
ÉÉ É
É
É
ÉÉÉÉ
É É
R
SEATING
PLANE
C
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
U
V
D
E
S
L
2
3
1
DIM
A
B
C
D
E
L
N
R
S
U
V
INCHES
MIN
MAX
0.260
0.270
0.200
0.210
0.090
0.104
0.020
0.040
0.022
0.028
0.115
0.125
0.226
0.236
0.166
0.176
0.019
0.029
0.010
0.020
0.010
0.020
MILLIMETERS
MIN
MAX
6.60
6.86
5.08
5.33
2.29
2.64
0.51
1.02
0.56
0.71
2.92
3.18
5.74
5.99
4.22
4.47
0.48
0.74
0.25
0.51
0.25
0.51
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
B
CASE 430B–02
ISSUE A
MOTOROLA RF DEVICE DATA
MRF5007 MRF5007R1
9
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MRF5007 MRF5007R1
10
◊
MRF5007/D
MOTOROLA RF DEVICE
DATA
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