ON ESDONCAN1LT3G Can/can-fd bus protector Datasheet

ESDONCAN1, SESDONCAN1
CAN/CAN-FD Bus Protector
Low Capacitance ESD Protection Diode
for CAN/CAN−FD Bus
The S/ESDONCAN1 has been designed to protect the CAN
transceiver from ESD and other harmful transient voltage events. This
device provides bidirectional protection for each data line with a
single compact SOT−23 package, giving the system designer a low
cost option for improving system reliability and meeting stringent
EMI requirements.
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SOT−23
DUAL BIDIRECTIONAL
VOLTAGE SUPPRESSOR
200 W PEAK POWER
Features
•
•
•
•
•
•
•
•
•
•
200 W Peak Power Dissipation per Line (8 x 20 msec Waveform)
Diode Capacitance Matching
Low Reverse Leakage Current (< 100 nA)
Low Capacitance High−Speed FlexRay Data Rates
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)
ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A
(1 x 50 ms)
ISO 7637−3, Repetitive Electrical Fast Transient (EFT)
EMI Surge Pulses, 50 A (5 x 50 ns)
Flammability Rating UL 94 V−0
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
SOT−23
CASE 318
STYLE 27
PIN 1
PIN 3
PIN 2
MARKING DIAGRAM
25EMG
G
1
Typical Applications
• Industrial
25E
M
G
♦
•
Smart Distribution Systems (SDS)
♦ DeviceNet
Automotive
♦ Controlled Area Network − CAN 2.1 / CAN FD
♦ Low and High Speed CAN
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
October, 2016 − Rev. 1
1
Publication Order Number:
ESDONCAN1/D
ESDONCAN1, SESDONCAN1
MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
Symbol
PPK
Rating
Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1)
Value
Unit
200
W
TJ
Operating Junction Temperature Range
−55 to 150
°C
TJ
Storage Temperature Range
−55 to 150
°C
TL
Lead Solder Temperature (10 s)
260
°C
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
8.0
400
23
kV
V
kV
ESD
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Symbol
VRWM
Parameter
Test Conditions
Min
Typ
Max
Unit
24
−
−
V
26.2
−
32
V
Reverse Working Voltage
(Note 2)
Breakdown Voltage
IT = 1 mA (Note 3)
IR
Reverse Leakage Current
VRWM = 24 V
−
15
100
nA
VC
Clamping Voltage
IPP = 1 A (8 x 20 ms Waveform)
(Note 4)
−
33.4
36.6
V
VC
Clamping Voltage
IPP = 3 A (8 x 20 ms Waveform)
(Note 4)
−
44
50
V
IPP
Maximum Peak Pulse Current
8 x 20 ms Waveform (Note 4)
−
−
3.0
A
CJ
Capacitance
VR = 0 V, f = 1 MHz (Line to GND)
−
−
10
pF
DC
Diode Capacitance Matching
VR = 0 V, 5 MHz (Note 5)
−
0.26
2
%
VBR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
4. Pulse waveform per Figure 1.
5. DC is the percentage difference between CJ of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
table.
ORDERING INFORMATION
Package
Shipping†
ESDONCAN1LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SESDONCAN1LT1G*
SOT−23
(Pb−Free)
3,000 / Tape & Reel
ESDONCAN1LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SESDONCAN1LT3G*
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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2
ESDONCAN1, SESDONCAN1
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
3.5
IPP, PEAK PULSE CURRENT (A)
% OF PEAK PULSE CURRENT
110
WAVEFORM
PARAMETERS
tr = 8 ms
td = 20 ms
100
90
80
c−t
70
60
td = IPP/2
50
40
30
20
10
0
0
10
5
20
15
2.5
2.0
1.5
1.0
0.5
0.0
30
30
25
3.0
35
Figure 1. Pulse Waveform, 8 × 20 ms
Figure 2. Clamping Voltage vs Peak Pulse Current
50
9
45
40
125°C
7
35
25°C
6
IT, (mA)
C, CAPACITANCE (pF)
8
5
30
25
20
15
4
25°C
10
3
0
10
5
15
20
0
20
25
65°C
125°C
5
TA = −55°C
22
VR, REVERSE VOLTAGE (V)
24
26
28
30
32
34
VBR, VOLTAGE (V)
Figure 4. VBR versus IT Characteristics
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
120
25
−55°C
+25°C
TA = +150°C
100
20
PERCENT DERATING (%)
VR, REVERSE BIAS VOLTAGE (V)
50
VC, CLAMPING VOLTAGE (V)
t, TIME (ms)
2
45
40
15
10
5
0
0
1
2
3
IL, LEAKAGE CURRENT (nA)
4
80
60
40
20
0
−60
5
Figure 5. IR versus Temperature Characteristics
−30
0
30
60
90
TEMPERATURE (°C)
120
150 180
Figure 6. Temperature Power Dissipation Derating
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3
ESDONCAN1, SESDONCAN1
APPLICATIONS
Background
suppression solution for CAN data communication lines.
The ESDONCAN1 is a low capacitance dual bidirectional
TVS device in a compact SOT-23 package especially
suitable for CAN2.1 (CAN-FD). This device is based on
Zener technology that optimizes the active area of a PN
junction to provide robust protection against transient EMI
surge voltage and ESD. The ESDONCAN1 has been tested
to EMI and ESD levels that exceed the specifications of
popular high speed CAN networks.
The Controller Area Network (CAN) is a serial
communication protocol designed for providing reliable
high speed data transmission in harsh environments. TVS
diodes provide a low cost solution to conducted and radiated
Electromagnetic Interference (EMI) and Electrostatic
Discharge (ESD) noise problems. The noise immunity level
and reliability of CAN transceivers can be easily increased
by adding external TVS diodes to prevent transient voltage
failures. The ESDONCAN1 provides a transient voltage
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4
ESDONCAN1, SESDONCAN1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Honeywell and SDS are registered trademarks of Honeywell International Inc.
DeviceNet is a trademark of Rockwell Automation.
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may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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5
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ESDONCAN1/D
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