MOC8101/MOC8102/MOC8103/MOC8104/MOC8105 Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection FEATURES • Isolation test voltage, 5300 VRMS A 1 6 B C 2 5 C NC 3 4 E • No base terminal connection for improved common mode interface immunity • Long term stability • Industry standard dual in line package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179009 DESCRIPTION AGENCY APPROVALS The MOC8101/2/3/4/5 family optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. The base terminal of the MOC8101/2/3/4/5 is not connected, resulting in a substantially improved common mode interference immunity. • UL1577, file no. E52744 system code H or J, double protection • CSA 93751 • BSI IEC 60950; IEC 60065 • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 ORDER INFORMATION PART REMARKS MOC8101 CTR 50 to 80 %, DIP-6 MOC8102 CTR 73 to 117 %, DIP-6 MOC8103 CTR 108 to 173 %, DIP-6 MOC8104 CTR 160 to 256 %, DIP-6 MOC8105 CTR 65 to 133 %, DIP-6 MOC8101-X006 CTR 50 to 80 %, DIP-6 400 mil (option 6) MOC8101-X007 CTR 50 to 80 %, SMD-6 (option 7) MOC8101-X009 CTR 50 to 80 %, SMD-6 (option 9) MOC8102-X006 CTR 73 to 117 %, DIP-6 400 mil (option 6) MOC8102-X007 CTR 73 to 117 %, SMD-6 (option 7) MOC8102-X009 CTR 73 to 117 %, SMD-6 (option 9) MOC8104-X006 CTR 160 to 256 %, DIP-6 400 mil (option 6) MOC8104-X009 CTR 160 to 256 %, SMD-6 (option 9) MOC8105-X006 CTR 65 to 133 %, DIP-6 400 mil (option 6) MOC8105-X009 CTR 65 to 133 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. Document Number: 83660 Rev. 1.5, 11-Jan-08 For technical questions, contact: [email protected] www.vishay.com 1 MOC8101/MOC8102/MOC8103/MOC8104/MOC8105 Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 6.0 V Forward continuous current IF 60 mA INPUT t ≤ 10 µs Surge forward current Power dissipation IFSM 2.5 A Pdiss 100 mW 1.33 mW/°C Derate linearly from 25°C OUTPUT Collector emitter breakdown voltage BVCEO 30 V Emitter collector breakdown voltage BVECO 7.0 V 50 mA 2.0 mW/°C Pdiss 150 mW VISO Collector current IC Derate linearly from 25°C Power dissipation COUPLER 5300 VRMS Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Isolation test voltage Comparative tracking index per DIN IEC 112/VDE 0303, part 1 VIO = 500 V Isolation resistance CTI 175 RIO 1012 Ω 3.33 mW/°C Derate linearly from 25 °C Total power dissipation Ptot 250 mW Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Junction temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Soldering temperature (2) Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. 1.25 1.5 UNIT INPUT Forward voltage IF = 10 mA VF Breakdown voltage IR = 10 µA VBR Reverse current Capacitance 6.0 V V VR = 6.0 V IR 0.01 VR = 0 V, f = 1.0 MHz CO 25 pF Rthja 750 K/W CCE 5.2 ICEO1 1.0 Thermal resistance 10 µA OUTPUT VCE = 5.0 V, f = 1.0 MHz Collector emitter capacitance Collector emitter dark current VCE = 10 V, Tamp = 25 °C MOC8101 VCE = 10 V, Tamp = 100 °C MOC8102 ICEO1 1.0 Collector emitter breakdown voltage IC = 1.0 mA BVCEO 30 Emitter collector breakdown voltage IE = 100 μA BVECO 7.0 Thermal resistance www.vishay.com 2 Rthja For technical questions, contact: [email protected] pF 50 nA µA V V 500 K/W Document Number: 83660 Rev. 1.5, 11-Jan-08 MOC8101/MOC8102/MOC8103/MOC8104/MOC8105 Optocoupler, Phototransistor Output, Vishay Semiconductors No Base Connection ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. VCEsat 0.25 0.4 CC 0.6 UNIT COUPLER IF = 5.0 mA Saturation voltage collector emitter Coupling capacitance V pF Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 10 V, IF = 10 mA Current transfer ratio PART SYMBOL MIN. MOC8101 CTR 50 TYP. MAX. 80 UNIT % MOC8102 CTR 73 117 % MOC8103 CTR 108 173 % MOC8104 CTR 160 256 % MOC8105 CTR 65 133 % MIN. MAX. UNIT SWITCHING CHARACTERISTICS TEST CONDITION SYMBOL Turn-on time PARAMETER VCC = 10 V, IC = 2.0 mA, RL = 100 Ω ton 3.0 µs Turn-off time VCC = 10 V, IC = 2.0 mA, RL = 100 Ω toff 2.3 µs Rise time VCC = 10 V, IC = 2.0 mA, RL = 100 Ω tr 2.0 µs Fall time VCC = 10 V, IC = 2.0 mA, RL = 100 Ω tf 2.0 µs fco 250 kHz Cut off frequency TYP. TYPICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified 1.7 10 1.5 Normalized to IF = 10 mA I C (Normalized) V F (V ) 1 1.3 TA = 55 °C 1.1 TA = 25 °C 0.9 TA = 100 °C 0.01 0.7 0.1 imoc8101_02 1 10 I F (mA) Fig. 1 - Forward Voltage vs. Forward Current Document Number: 83660 Rev. 1.5, 11-Jan-08 0.1 0.1 100 1 imoc8101_03 10 100 I F(mA) Fig. 2 - Collector Current vs. LED Forward Current For technical questions, contact: [email protected] www.vishay.com 3 MOC8101/MOC8102/MOC8103/MOC8104/MOC8105 Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection 25 10000 Normalized to VCE = 10 V MOC8104 I F = 10 mA 1000 15 (Normalized) I C (mA) 20 MOC8103 MOC8105 10 5 1 2 3 4 5 6 7 8 9 0.1 10 0 VCE (V) imoc8101_04 VCE = 10 V 1 0 0 VCE = 30 V 10 I CEO MOC8102 MOC8101 100 20 40 Fig. 3 - Collector Current vs. Collector Emitter Voltage 60 100 Fig. 5 - Collector Emitter Dark Current vs. Ambient Temperature 10 20 Normalized to TA = 25 °C 18 f = 1 MHz C - Capacitance (pF) 16 IC (mA) 80 TA (°C) imoc8101_06 IF = 10 mA VCE = 10 V 1 14 C LED 12 10 8 C CE 6 4 2 0.1 0 0 - 60 - 40 - 20 imoc8101_05 20 40 T (°C) 60 80 100 120 0.01 0.1 1 Voltage (V) imoc8101_07 Fig. 4 - Collector Current vs. Ambient Temperature IC 100 Fig. 6 - Capacitance vs. Voltage VCC = 10 V IF 1 0 Input pulse R L = 100 Ω 10 % Input Output Output pulse 90 % tr t of f t on Test circuit tf Waveforms imoc81010_01 Fig. 7 - Switching Time Test Circuit and Waveforms www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 83660 Rev. 1.5, 11-Jan-08 MOC8101/MOC8102/MOC8103/MOC8104/MOC8105 Optocoupler, Phototransistor Output, Vishay Semiconductors No Base Connection PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.300 (7.62) (0.45) 0.048 0.039 (1.00) min. typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18 ° 4° typ. 0.114 (2.90) 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.035 (0.90) 0.022 (0.55) 0.130 (3.0) 0.010 (0.25) typ. 3° to 9° 0.300 to 0.347 0.100 (2.54) typ. (7.62 to 8.81) i178004 Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref. 0.028 (0.7) min. 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) Document Number: 83660 Rev. 1.5, 11-Jan-08 0.331 (8.4) min. 0.406 (10.3) max. 0.180 (4.6) 0.160 (4.1) 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30 ) typ. 0.020 (0.51 ) 0.040 (1.02 ) 15° max. 0.315 (8.00) min. For technical questions, contact: [email protected] 18450 www.vishay.com 5 MOC8101/MOC8102/MOC8103/MOC8104/MOC8105 Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 83660 Rev. 1.5, 11-Jan-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1