CYSTEKEC MTE013N10RJ3-0-T3-G N-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C056J3
Issued Date : 2017.04.10
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE013N10RJ3
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=15A
Features
100V
42A
9A
12.3mΩ(typ)
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTE013N10RJ3
TO-252(DPAK)
G
D S
G:Gate D:Drain S:Source
Ordering Information
Device
MTE013N10RJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE013N10RJ3
CYStek Product Specification
Spec. No. : C056J3
Issued Date : 2017.04.10
Revised Date :
Page No. : 2/ 9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current @L=0.1mH
Single Pulse Avalanche Energy @ L=0.5mH, ID=33 Amps,
VDD=50V
TC=25°C
TC=100°C
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
(Note 1)
(Note 1)
(Note 4)
(Note 4)
(Note 3)
(Note 5)
(Note 5)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Symbol
Limits
VDS
VGS
IDM
IAS
100
±20
42
29.7
9
7.2
168
42
EAS
272
ID
IDSM
PD
PDSM
Tj, Tstg
60
30
2.5
1.6
-55~+175
Unit
V
A
mJ
W
°C/W
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
2.5
Thermal Resistance, Junction-to-ambient, max (Note2)
50
°C/W
RθJA
Thermal Resistance, Junction-to-ambient, max (Note4)
110
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
5. 100% tested by condition of VDD=25V, ID=10A, L=2mH, VGS=10V.
MTE013N10RJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056J3
Issued Date : 2017.04.10
Revised Date :
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
Min.
Typ.
Max.
Unit
100
2
-
70
12.6
12.3
4
±100
1
5
17
V
mV/°C
V
S
nA
36.4
12.4
8.6
24.8
19
40.2
8.2
2160
191
16
-
0.83
33
50
42
168
1.2
-
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
Test Conditions
mΩ
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=10A
VGS=±20V, VDS=0V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=55°C
VGS =10V, ID=15A
nC
VDD=80V, ID=15A,VGS=10V
ns
VDD=50V, ID=15A, VGS=10V, RG=1Ω
pF
VGS=0V, VDS=50V, f=1MHz
μA
A
V
ns
nC
IS=15A, VGS=0V
VGS=0V, IF=15A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTE013N10RJ3
CYStek Product Specification
Spec. No. : C056J3
Issued Date : 2017.04.10
Revised Date :
Page No. : 4/ 9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
80
ID, Drain Current (A)
70
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V
6.5V
60
50
6V
40
30
5.5 V
20
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=5V
10
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VGS=6V
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
100
VGS=7V
10
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
1
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8 10 12 14 16
IDR , Reverse Drain Current(A)
18
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
2.8
ID=15A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
400
300
200
100
2.4
VGS=10V, ID=15A
2
1.6
1.2
0.8
RDS(ON) @Tj=25°C : 12.3mΩ
0.4
0
0
0
MTE013N10RJ3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C056J3
Issued Date : 2017.04.10
Revised Date :
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
10
0
5
10
15 20 25 30 35 40
VDS, Drain-Source Voltage(V)
45
-75 -50 -25
50
25 50
75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
VDS=10V
VDS=20V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
0
10
VDS=15V
1
0.1
Ta=25°C
Pulsed
0.01
0.001
8
VDS=50V
6
VDS=80V
4
2
ID=15A
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
35
40
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
50
1000
100
ID, Maximum Drain Current(A)
ID, Drain Current(A)
45
RDSON
Limited
100 μs
1ms
10
10ms
100ms
1
TC=25°C, Tj=175°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
1s
DC
40
35
30
25
20
15
10
Tj(max)=175°C,VGS=10V, RθJC=2.5°C/W
Single Pulse
5
0
0.1
0.1
MTE013N10RJ3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056J3
Issued Date : 2017.04.10
Revised Date :
Page No. : 6/ 9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
2000
80
TJ(MAX) =175°C
TC=25°C
RθJC=2.5°C/W
1600
60
1400
Power (W)
ID, Drain Current(A)
1800
VDS=10V
70
50
40
30
1200
1000
800
600
20
400
10
200
0
0
1
2
3
4
5
6
7
8
VGS, Gate-Source Voltage(V)
9
10
0
0.001
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTE013N10RJ3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056J3
Issued Date : 2017.04.10
Revised Date :
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTE013N10RJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056J3
Issued Date : 2017.04.10
Revised Date :
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE013N10RJ3
CYStek Product Specification
Spec. No. : C056J3
Issued Date : 2017.04.10
Revised Date :
Page No. : 9/ 9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
E013
N10R
Device
Name
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE013N10RJ3
CYStek Product Specification
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