MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • • • • • PIN 3 COLLECTOR (OUTPUT) PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant XX MG G SC−59 CASE 318D STYLE 1 XXX MG G SOT−23 CASE 318 STYLE 6 1 1 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc IC 100 mAdc Input Forward Voltage VIN(fwd) 30 Vdc Input Reverse Voltage VIN(rev) 5 Vdc Collector Current − Continuous Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XX MG G SC−70/SOT−323 CASE 419 STYLE 3 XX M SC−75 CASE 463 STYLE 1 XX M SOT−723 CASE 631AA STYLE 1 1 1 1 SOT−1123 CASE 524AA STYLE 1 XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) XM 1 *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 5 1 Publication Order Number: DTC143Z/D MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 Table 1. ORDERING INFORMATION Part Marking Package Shipping† 8K SC−59 (Pb−Free) 3000 / Tape & Reel MMUN2233LT1G, SMMUN2233LT1G* A8K SOT−23 (Pb−Free) 3000 / Tape & Reel NSVMMUN2233LT3G* A8K SOT−23 (Pb−Free) 10000 / Tape & Reel MUN5233T1G, SMUN5233T1G* 8K SC−70/SOT−323 (Pb−Free) 3000 / Tape & Reel DTC143ZET1G, NSVDTC143ZET1G* 8K SC−75 (Pb−Free) 3000 / Tape & Reel DTC143ZM3T5G, NSVDTC143ZM3T5G* 8K SOT−723 (Pb−Free) 8000 / Tape & Reel NSBC143ZF3T5G R SOT−1123 (Pb−Free) 8000 / Tape & Reel Device MUN2233T1G, NSVMUN2233T1G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. PD, POWER DISSIPATION (mW) 300 250 (1) SC−75 and SC−70/SOT−323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−1123; 100 mm2, 1 oz. copper trace (5) SOT−723; Minimum Pad 200 (1) (2) (3) (4) (5) 150 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 2 MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 230 338 1.8 2.7 mW THERMAL CHARACTERISTICS (SC−59) (MUN2233) PD Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 540 370 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 264 287 °C/W TJ, Tstg −55 to +150 °C 246 400 2.0 3.2 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−23) (MMUN2233L) PD Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 508 311 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 174 208 °C/W TJ, Tstg −55 to +150 °C 202 310 1.6 2.5 mW Junction and Storage Temperature Range Thermal Characteristics (SC−70/SOT−323) (MUN5233) PD Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 618 403 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 280 332 °C/W TJ, Tstg −55 to +150 °C 200 300 1.6 2.4 mW Junction and Storage Temperature Range Thermal Characteristics (SC−75) (DTC143ZE) PD Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range mW/°C RqJA 600 400 °C/W TJ, Tstg −55 to +150 °C 260 600 2.0 4.8 mW Thermal Characteristics (SOT−723) (DTC143ZM3) PD Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range 1. 2. 3. 4. FR−4 @ Minimum Pad. FR−4 @ 1.0 x 1.0 Inch Pad. FR*4 @ 100 mm2, 1 oz. copper traces, still air. FR*4 @ 500 mm2, 1 oz. copper traces, still air. www.onsemi.com 3 mW/°C RqJA 480 205 °C/W TJ, Tstg −55 to +150 °C MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 254 297 2.0 2.4 mW Thermal Characteristics (SOT−1123) (NSBC143ZF3) PD Total Device Dissipation TA = 25°C (Note 3) (Note 4) (Note 3) (Note 4) Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient (Note 3) (Note 4) RqJA 493 421 °C/W Thermal Resistance, Junction to Lead (Note 3) RqJL 193 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range 1. 2. 3. 4. FR−4 @ Minimum Pad. FR−4 @ 1.0 x 1.0 Inch Pad. FR*4 @ 100 mm2, 1 oz. copper traces, still air. FR*4 @ 500 mm2, 1 oz. copper traces, still air. Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max − − 100 − − 500 − − 0.18 50 − − 50 − − 80 200 − − − 0.25 − 0.6 0.5 1.3 0.9 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 5) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 5) (IC = 5.0 mA, VCE = 10 V) Collector *Emitter Saturation Voltage (Note 5) (IC = 10 mA, IB = 1.0 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (on) (VCE = 0.3 V, IC = 5 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH Vdc Vdc Vdc Vdc Vdc Input Resistor R1 3.3 4.7 6.1 Resistor Ratio R1/R2 0.08 0.1 0.12 5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%. www.onsemi.com 4 kW MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 TYPICAL CHARACTERISTICS MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 0.1 150°C −55°C 150°C 100 −55°C 25°C 25°C 0.01 10 1 10 100 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 3.2 100 2 1.6 1.2 0.8 0.4 150°C 10 −55°C 1 0.1 25°C 0.01 VO = 5 V 0.001 0 10 20 30 40 50 0 1 2 3 VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) 2.4 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 2.8 0 100 −55°C 1 150°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current www.onsemi.com 5 50 4 MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 TYPICAL CHARACTERISTICS NSBC143ZF3 1000 IC/IB = 10 VCE = 10 V hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 150°C 0.1 −55°C 150°C −55°C 100 25°C 10 25°C 0.01 1 10 20 30 40 1 0.1 50 1 IC, COLLECTOR CURRENT (mA) 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 2.4 100 2 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 1.6 1.2 0.8 0.4 0 150°C −55°C 10 1 0.1 25°C 0.01 VO = 5 V 0.001 0 10 20 30 40 50 0 1 2 3 4 VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) 10 10 25°C −55°C 1 150°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 11. Input Voltage versus Output Current www.onsemi.com 6 MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e A1 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR C A MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 L SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 7 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 mm Ǔ ǒinches 0.8 0.031 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 10 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 HE 2 2X 2X b e 0.08 X Y SIDE VIEW TOP VIEW 3X MILLIMETERS DIM MIN NOM MAX A 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 C 0.07 0.12 0.17 D 1.15 1.20 1.25 E 0.75 0.80 0.85 0.40 BSC e HE 1.15 1.20 1.25 0.29 REF L L2 0.15 0.20 0.25 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR C L 1 3X L2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 PACKAGE DIMENSIONS SOT−1123 CASE 524AA ISSUE C −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− 1 3 E 2 TOP VIEW A c DIM A b b1 c D E e HE L L2 HE SIDE VIEW 3X STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR b L2 MILLIMETERS MIN MAX 0.34 0.40 0.15 0.28 0.10 0.20 0.07 0.17 0.75 0.85 0.55 0.65 0.35 0.40 0.95 1.05 0.185 REF 0.05 0.15 0.08 X Y e 2X 3X b1 L BOTTOM VIEW SOLDERING FOOTPRINT* 1.20 3X 0.34 0.26 1 0.38 2X 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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