LRC MMUN2133 Bias resistor transistor Datasheet

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
base-emitter resistor.The BRT eliminates these individual components by integrating them
into a single device. The use of a BRT can reduce both system cost and board space. The
device is housed in the SOT-23 package which is
designed for low power surface mount applications.
∗ Simplifies Circuit Design
∗ Reduces Board Space
∗ Reduces Component Count
∗ The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
∗ Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel
PIN1
base
(Input)
R1
PNP SILICON
BIAS RESISTOR
TRANSISTOR
3
PIN3
Collector
(output)
1
R2
2
PIN2
Emitter
(Ground)
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T A = 25°C (1)
Derate above 25°C
Symbol
VCBO
V CEO
IC
PD
Value
50
50
100
200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Symbol
R θ JA
T J , T stg
Value
625
–65 to +150
260
10
Unit
°C/W
°C
°C
Sec
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
TL
DEVICE MARKING AND RESISTOR VALUES
8
Device
Marking
R1 (K)
R2 (K)
MMUN2111LT1
A6A
10
10
MMUN2112LT1
A6B
22
22
MMUN2113LT1
A6C
47
47
MMUN2114LT1
A6D
10
47
MMUN2115LT1 (2)
A6E
10
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Q1–1/7
LESHAN RADIO COMPANY, LTD.
MMUN2111RLT1 SERIES
DEVICE MARKING AND RESISTOR VALUES (Continued)
Marking
A6F
A6G
A6H
A6J
A6K
A6L
R1 (K)
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
8
Device
MMUN2116RLT1 (2)
MMUN2130RLT1 (2)
MMUN2131RLT1 (2)
MMUN2132RLT1 (2)
MMUN2133RLT1 (2)
MMUN2134RLT1 (2)
1.0
2.2
4.7
47
47
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
I CBO
I CEO
I EBO
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
nAdc
nAdc
mAdc
V(BR)CBO
V(BR)CEO
50
50
-
-
Vdc
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
-
60
100
140
140
250
250
5.0
15
27
140
130
-
0.25
Vdc
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB=50V, I E = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
MMUN2111RLT1
(VEB = 6.0 V, IC = 0)
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
Collector-Emitter Breakdown Voltage(3)(IC=2.0mA, IB=0)
ON CHARACTERISTICS
(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA)
(IC = 10 mA, IB = 5 mA) MMUN2130RLT1 MMUN2131RLT1
(IC = 10 mA, IB = 1 mA) MMUN2115RLT1 MMUN2116RLT1
MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1
Output Voltage (on)
(VCC=5.0V,VB=2.5V, RL=1.0kΩ)
MMUN2111RLT1
MMUN2112RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
(VCC =5.0V,VB=3.5V, RL= 1.0kΩ)
MMUN2113RLT1
VCE(sat)
VOL
-
Vdc
2. New devices. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
2-446 LRC Small-Signal Transistors, FETs and Diodes Device Data
Q1–2/7
LESHAN RADIO COMPANY, LTD.
MMUN2111RLT1 SERIES
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Output Voltage (off) (VCC= 5.0V, VB = 0.5 V, R L = 1.0kΩ)
VOH
(VCC= 5.0V, VB = 0.25 V, RL =1.0kΩ)
MMUN2115RLT1
MMUN2116RLT1
MMUN2131RLT1
MMUN2132RLT1
(VCC=5.0 V,VB=0.050V,RL=1.0kΩ)
MMUN2130RLT1
Input Resistor
MMUN2111RLT1
R1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
Resistor Ratio MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1
R 1 /R 2
MMUN2114RLT1
MMUN2115RLT1 MMUN2116RLT1
MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1
MMUN2133RLT1
Min
4.9
Typ
—
Max
—
Unit
Vdc
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
kΩ
0.8
0.17
—
0.8
0.055
1.0
0.21
—
1.0
0.1
1.2
0.25
—
1.2
0.185
Q1–3/7
LESHAN RADIO COMPANY, LTD.
MMUN2111RLT1 SERIES
V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
P D , POWER DISSIPATION (MILLIWATTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111RLT1
250
200
150
100
R
50
θJA
= 625°C/W
0
–50
0
50
10
1
I C /I B =10
T A = –25°C
75°C
0.1
0.01
150
0
20
40
60
80
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
1000
4
V
CE
= 10 V
T A =75°C
25°C
100
–25°C
C ob , CAPACITANCE (pF)
h FE , DC CURRENT GAIN (NORMALIZED)
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
10
f = 1 MHz
l E= 0 V
3
T A = 25°C
2
1
0
1
10
100
0
100
V in , INPUT VOLTAGE (VOLTS)
T A = –25°C
10
20
30
40
50
100
25°C
75°C
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
I C , COLLECTOR CURRENT (mA)
25°C
1
0.1
0.01
V O= 5 V
0.001
V O = 0.2 V
T A = –25°C
10
25°C
75°C
1
0.1
0
1
2
3
4
5
6
7
8
9
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
10
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
Q1–4/7
LESHAN RADIO COMPANY, LTD.
MMUN2111RLT1 SERIES
h FE , DC CURRENT GAIN (NORMALIZED)
V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112RLT1
10
I C /I B =10
T A = –25°C
25°C
75°C
1
0.1
0.01
0
20
40
60
1000
V
= 10 V
T A =75°C
25°C
–25°C
100
10
80
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
Figure 8. DC Current Gain
4
100
I C , COLLECTOR CURRENT (mA)
l E= 0 V
T A = 25°C
3
2
1
0
10
20
30
40
T A = –25°C
10
1
0.1
0.01
V O= 5 V
0.001
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
0
25°C
75°C
f = 1 MHz
C ob , CAPACITANCE (pF)
CE
V O = 0.2 V
T A = –25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Q1–5/7
LESHAN RADIO COMPANY, LTD.
MMUN2111RLT1 SERIES
h FE , DC CURRENT GAIN (NORMALIZED)
V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2113RLT1
1
I C /I B =10
T A = –25°C
25°C
75°C
0.1
0.01
0
10
20
30
T A =75°C
25°C
–25°C
100
10
40
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
Figure 13. DC Current Gain
1
100
T A = 75°C
0.8
I C , COLLECTOR CURRENT (mA)
f = 1 MHz
l E= 0 V
T A = 25°C
0.6
0.4
0.2
0
25°C
–25°C
10
1
0.1
0.01
V O= 5 V
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
1000
V O= 2 V
T A=–25°C
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
Q1–6/7
LESHAN RADIO COMPANY, LTD.
MMUN2111RLT1 SERIES
1
I C /I B =10
T A = –25°C
25°C
75°C
0.1
0.01
0
10
20
30
40
h FE , DC CURRENT GAIN (NORMALIZED)
V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2114RLT1
V
160
CE
T A =75°C
= 10V
25°C
140
–25°C
120
100
80
60
40
20
0
1
2
4
6
8
10
15
40
50
60
70
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
Figure 18. DC Current Gain
80
90 100
100
I C , COLLECTOR CURRENT (mA)
4
f = 1 MHz
l E= 0 V
3.5
T A= 25°C
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
35
40
45
50
25°C
T A = 75°C
–25°C
10
V O= 5 V
1
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
12 V
10
V in , INPUT VOLTAGE (VOLTS)
20
I C , COLLECTOR CURRENT (mA)
4.5
C ob , CAPACITANCE (pF)
180
V O = 0.2 V
T A = –25°C
25°C
Typical Application
for PNP BRTs
75°C
1
LOAD
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current
Source
Q1–7/7