Single P-channel MOSFET ELM342004A-N ■General description ■Features ELM342004A-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-40V Id=-8.7A Rds(on) < 20mΩ (Vgs=-10V) Rds(on) < 32mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -40 V Gate-source voltage Vgs ±20 -8.7 V Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Id A Idm -7.0 -45 Ias -45 A Eas 103 2.5 mJ Pd Tj, Tstg A 3 4 W 1.6 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Symbol Rθjc Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. 25 Unit Note °C/W 50 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM342004A-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss V -1 Vds=-30V, Vgs=0V, Ta=55°C -10 Vds=0V, Vgs=±20V μA ±100 nA -3.0 V A 1 mΩ 1 -1.3 S V 1 1 Is -1.9 A Ism -45 A Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vds=-5V, Vgs=-10V Static drain-source on-resistance Rds(on) Max. body-diode continuous current -40 Vds=-32V, Vgs=0V Gate threshold voltage On-state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Gfs Vsd -1.5 -45 -1.9 Vgs=-10V, Id=-8A 15 20 Vgs=-4.5V, Id=-6A 23 32 Vds=-5V, Id=-8A If=-8A, Vgs=0V 30 Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Ciss 2670 pF Output capacitance Reverse transfer capacitance Coss Vgs=0V, Vds=-30V, f=1MHz Crss 392 280 pF pF 4.65 Ω 50 nC 2 10 13 nC nC 2 2 10 ns 2 20 ns 2 55 30 ns ns 2 2 26 17 ns nC Gate resistance SWITCHING PARAMETERS Total gate charge Qg Gate-source charge Gate-drain charge Qgs Qgd Turn-on delay time Turn-on rise time td(on) Turn-off delay time Turn-off fall time td(off) RL=1Ω, Id=-8A, Rgen=6Ω tf Reverse recovery time Reverse recovery charge Rg tr trr Qrr Vgs=0V, Vds=0V, f=1MHz Vgs=-10V, Vds=-20V Id=-8A Vgs=-10V, Vds=-30V If=-8A, dIf/dt=100A/μs NOTE : 1. Pulsed test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Vdd=-20V. Starting Tj=25°C. 4-2 3 Single P-channel MOSFET ELM342004A-N ■Typical electrical and thermal characteristics � � � � � � � � � � � � � � � 4-3 Single P-channel MOSFET � � � � � � � � � � � � � ELM342004A-N 4-4