NTE2562 (NPN) & NTE2563 (PNP) Silicon Complementary Transistors High Current Switch Description: The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type package designed for use as a high current switch. Typical application include relay drivers, high– speed inverters, converters, etc. Features: D Low Collector–Emitter Saturation Voltage D High Current Capacity Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 40V, IE = 0 – – 0.1 mA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 0.1 mA DC Current Gain hFE VCE = 2V, IC = 1A 100 – 200 VCE = 2V, IC = 6A 30 – – VCE = 5V, IC = 1A – 120 – Current Gain–Bandwidth Product fT MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Collector–Emitter Saturation Voltage NTE2562 VCE(sat) Test Conditions IC = 5A, IB = 0.25A NTE2563 Min Typ Max Unit – – 0.4 V – – 0.5 V Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 30 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 6 – – V – 0.2 – µs – 0.1 – µs – 0.5 – µs – 0.3 – µs – 0.03 – µs Turn–On Time NTE2562 ton VCC = 10V, VBE = –5V, 10IB1 = –10IB2 = IC = 5A, Pulse Width = 20µs, Duty Cycle = 1% NTE2563 Storage Time NTE2562 tstg NTE2563 Fall Time tf .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated