Micross ICE20N170FP N-channel enhancement mode mosfet Datasheet

ICE20N170FP
Product Summary
N-Channel Enhancement Mode MOSFET
ID
TA = 25°C
20A
Max
V(BR)DSS
rDS(ON)
ID = 250uA
600V
Min
VGS = 10V
0.17Ω
Typ
Qg
VDS = 480V
62nC
Typ
Pin Description:
Features:
Low rDS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
D
G
TO-220
Optimized Design For High Performance Power Systems
S
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol
ID
ID, pulse
Parameter
Continous Drain Current
Value
Unit
Conditions
20
A
TC = 25°C
Pulsed Drain Current
62
A
TC = 25°C
EAS
Avalanche Energy, Single Pulse
520
mJ
ID = 10A
IAR
Avalanche Current, Repetitive
20
A
Limited by Tjmax
MOSFET dv/dt Ruggedness
50
V/ns
dv/dt
VGS
Gate Source Voltage
Ptot
Power Dissipation
Tj, Tstg
±20
±30
Operating and Storage Temperature
Parameter
Static
AC (f>Hz)
35
W
-55 to +150
°C
50
Ncm
M 2.5 screws
Unit
Conditions
Mounting Torque
Symbol
V
VDS = 480V, ID = 20A, Tj = 125°C
Values
Min
Typ
Max
TC = 25°C
Thermal Characteristics
RthJC
Thermal Resistance, Junction to Case
-
-
3.5
RthJA
Thermal Resistance, Junction to Ambient
-
-
72
Tsold
Soldering Temperature, Wave Soldering Only Allowed At Leads
-
-
260
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
Drain to Source Breakdown Voltage
600
640
-
VGS(th)
Gate Threshold Voltage
2.1
3
3.9
-
0.1
1
-
-
100
-
-
100
-
0.17
0.199
-
0.52
-
-
4.3
-
IDSS
IGSS
RDS(on)
RGS
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain to Source On-State Resistance
Gate Resistance
V
µA
nA
Ω
Ω
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V, Tj = 25°C
VDS = 600V, VGS = 0V, Tj = 150°C
VGS = ±20v, VDS = 0V
VGS = 10V, ID = 10A, Tj = 25°C
VGS = 10V, ID = 10A, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
1
ICE20N170FP
Symbol
Parameter
Values
Min
Typ
Max
Unit
Conditions
Dynamic Characteristics
Ciss
Input Capacitance
-
2020
-
Coss
Output Capacitance
-
980
-
Crss
Reverse Transfer Capacitance
-
9
-
gfs
Transconductance
-
19
-
td(on)
Turn-on Delay Time
-
39
-
Tr
Rise Time
-
3.5
-
td(off )
Turn-off Delay Time
-
55
-
tf
Fall Time
-
7
-
pF
VGS = 0V, VDS = 25V, f = 1 MHz
S
VDS = >2*ID* RDS, ID = 2A
nS
VDS = 480V, VGS = 10V, ID = 4A, RG = 4Ω
(External)
Gate Charge Characteristics
Qgs
Gate to Source Charge
-
13
-
Qgd
Gate to Drain Charge
-
23
-
Qg
Gate Charge Total
-
62
-
Vplateau
Gate Plateau Voltage
-
5.8
-
V
Diode Forward Voltage
-
0.9
1.2
V
trr
Reverse Recovery Time
-
407
-
ns
Qrr
Reverse Recovery Charge
-
6.7
-
µC
Irm
Peak Reverse Recovery Current
-
32
-
A
nC
VDS = 480V, ID = 20A, VGS = 10V
Reverse Diode
VSD
VGS = 0V, IS = IF
VRR = 480V, IS = IF, diF/dt = 100 A/µS
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
2
ICE20N170FP
Output Characteristics
Transfer Characterstics
VGS = 10V to 7V
60
60
50
ID - Drain Current (A)
ID - Drain Current (A)
50
40
6V
30
20
5V
0
5
10
30
20
10
10
0
40
0
15
VDS - Drain to Source Voltage (V)
TJ = 150°C
0
2
On State Resistance vs Drain Current
6
8
10
4.0
3.5
400
RDS(on) - On State Resistance
(Normalized)
RDS(on) - On State Resistance (mΩ)
4
VGS - Gate to Source Voltage (V)
On Resistance vs Junction Temperature
500
300
VGS = 10V
200
100
0
25°C
VGS = 10V
ID = 10A
3.0
2.5
2.0
1.5
1.0
0.5
0
10
20
30
40
ID - Drain Current (A)
50
0.0
60
-50
-25
50
60
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
Gate Charge
10
VGS - Gate to Source Voltage (V)
9
8
VDS = 480V
ID = 20A
7
6
5
4
3
2
1
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
70
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
3
ICE20N170FP
1.4
10000
1.3
Ciss
1.2
1000
1.1
C - Capacitance (pF)
VGS(th) - Gate Threshold Voltage (Normalized)
Capacitance
Gate Threshold Voltage vs. Junction Temperature
ID = 250µA
1.0
0.9
0.8
0.7
Coss
100
10
0.6
Crss
0.5
0
0.4
-50
-25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
0
100
Drain to Source Breakdown Voltage vs. Junction Temperature
1.1
10
ID - Drain Current (A)
V(BR)DSS - Drain to Source Breakdown Voltage
(Normalized)
100
ID = 1mA
1.0
0.8
25
50
75
100
TJ - Junction Temperature (°C)
125
500
600
Single Pulse
Tc = 25°C
T = 150°C
VGS = 10V
10us
1
1ms
10ms
0.1
0
400
100us
0.9
-25
300
Maximum Rate Forward Biased Safe Operating Area
1.2
-50
200
VDS- Drain to Source Voltage (V)
RDS (ON) Limit
Package Limit
Thermal Limit
0.01
150
1
DC
10
100
VDS- Drain to Source Voltage (V)
1000
Transient Thermal Response - Junction to Case
r(t) - Transit Thermal Resistance
(Normalized)
1.00
0.5
0.2
0.10
0.1
0.05
0.02
Notes:
0.01
PDM
Single Pulse
t1
0.00
1.0E-06
t2
Duty Cycle, D =
1.0E-04
1.0E-02
t1
t2
1.0E-00
t - Time (seconds)
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
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