ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET ID TA = 25°C 20A Max V(BR)DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance D G TO-220 Optimized Design For High Performance Power Systems S Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol ID ID, pulse Parameter Continous Drain Current Value Unit Conditions 20 A TC = 25°C Pulsed Drain Current 62 A TC = 25°C EAS Avalanche Energy, Single Pulse 520 mJ ID = 10A IAR Avalanche Current, Repetitive 20 A Limited by Tjmax MOSFET dv/dt Ruggedness 50 V/ns dv/dt VGS Gate Source Voltage Ptot Power Dissipation Tj, Tstg ±20 ±30 Operating and Storage Temperature Parameter Static AC (f>Hz) 35 W -55 to +150 °C 50 Ncm M 2.5 screws Unit Conditions Mounting Torque Symbol V VDS = 480V, ID = 20A, Tj = 125°C Values Min Typ Max TC = 25°C Thermal Characteristics RthJC Thermal Resistance, Junction to Case - - 3.5 RthJA Thermal Resistance, Junction to Ambient - - 72 Tsold Soldering Temperature, Wave Soldering Only Allowed At Leads - - 260 °C/W °C Leaded 1.6mm (0.063in.) from Case for 10s Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS Drain to Source Breakdown Voltage 600 640 - VGS(th) Gate Threshold Voltage 2.1 3 3.9 - 0.1 1 - - 100 - - 100 - 0.17 0.199 - 0.52 - - 4.3 - IDSS IGSS RDS(on) RGS Zero Gate Voltage Drain Current Gate Source Leakage Current Drain to Source On-State Resistance Gate Resistance V µA nA Ω Ω VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 600V, VGS = 0V, Tj = 25°C VDS = 600V, VGS = 0V, Tj = 150°C VGS = ±20v, VDS = 0V VGS = 10V, ID = 10A, Tj = 25°C VGS = 10V, ID = 10A, Tj = 150°C f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 1 ICE20N170FP Symbol Parameter Values Min Typ Max Unit Conditions Dynamic Characteristics Ciss Input Capacitance - 2020 - Coss Output Capacitance - 980 - Crss Reverse Transfer Capacitance - 9 - gfs Transconductance - 19 - td(on) Turn-on Delay Time - 39 - Tr Rise Time - 3.5 - td(off ) Turn-off Delay Time - 55 - tf Fall Time - 7 - pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2*ID* RDS, ID = 2A nS VDS = 480V, VGS = 10V, ID = 4A, RG = 4Ω (External) Gate Charge Characteristics Qgs Gate to Source Charge - 13 - Qgd Gate to Drain Charge - 23 - Qg Gate Charge Total - 62 - Vplateau Gate Plateau Voltage - 5.8 - V Diode Forward Voltage - 0.9 1.2 V trr Reverse Recovery Time - 407 - ns Qrr Reverse Recovery Charge - 6.7 - µC Irm Peak Reverse Recovery Current - 32 - A nC VDS = 480V, ID = 20A, VGS = 10V Reverse Diode VSD VGS = 0V, IS = IF VRR = 480V, IS = IF, diF/dt = 100 A/µS Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 2 ICE20N170FP Output Characteristics Transfer Characterstics VGS = 10V to 7V 60 60 50 ID - Drain Current (A) ID - Drain Current (A) 50 40 6V 30 20 5V 0 5 10 30 20 10 10 0 40 0 15 VDS - Drain to Source Voltage (V) TJ = 150°C 0 2 On State Resistance vs Drain Current 6 8 10 4.0 3.5 400 RDS(on) - On State Resistance (Normalized) RDS(on) - On State Resistance (mΩ) 4 VGS - Gate to Source Voltage (V) On Resistance vs Junction Temperature 500 300 VGS = 10V 200 100 0 25°C VGS = 10V ID = 10A 3.0 2.5 2.0 1.5 1.0 0.5 0 10 20 30 40 ID - Drain Current (A) 50 0.0 60 -50 -25 50 60 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 Gate Charge 10 VGS - Gate to Source Voltage (V) 9 8 VDS = 480V ID = 20A 7 6 5 4 3 2 1 0 0 10 20 30 40 Qg - Total Gate Charge (nC) 70 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 3 ICE20N170FP 1.4 10000 1.3 Ciss 1.2 1000 1.1 C - Capacitance (pF) VGS(th) - Gate Threshold Voltage (Normalized) Capacitance Gate Threshold Voltage vs. Junction Temperature ID = 250µA 1.0 0.9 0.8 0.7 Coss 100 10 0.6 Crss 0.5 0 0.4 -50 -25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 0 100 Drain to Source Breakdown Voltage vs. Junction Temperature 1.1 10 ID - Drain Current (A) V(BR)DSS - Drain to Source Breakdown Voltage (Normalized) 100 ID = 1mA 1.0 0.8 25 50 75 100 TJ - Junction Temperature (°C) 125 500 600 Single Pulse Tc = 25°C T = 150°C VGS = 10V 10us 1 1ms 10ms 0.1 0 400 100us 0.9 -25 300 Maximum Rate Forward Biased Safe Operating Area 1.2 -50 200 VDS- Drain to Source Voltage (V) RDS (ON) Limit Package Limit Thermal Limit 0.01 150 1 DC 10 100 VDS- Drain to Source Voltage (V) 1000 Transient Thermal Response - Junction to Case r(t) - Transit Thermal Resistance (Normalized) 1.00 0.5 0.2 0.10 0.1 0.05 0.02 Notes: 0.01 PDM Single Pulse t1 0.00 1.0E-06 t2 Duty Cycle, D = 1.0E-04 1.0E-02 t1 t2 1.0E-00 t - Time (seconds) Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 4