UNISONIC TECHNOLOGIES CO., LTD MPSA194 PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 DESCRIPTION TO-92 The UTC MPSA194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits. FEATURES * Collector-Emitter Voltage: VCEO=400V * Power Dissipation: 1.0W 1 TO-92NL APPLICATIONS * Telephone Circuit * Telecommunication Circuit ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSA194L-T92-C-B MPSA194G-T92-C-B MPSA194L-T92-C-K MPSA194G-T92-C-K MPSA194L-T92-A-B MPSA194G-T92-A-B MPSA194L-T92-A-K MPSA194G-T92-A-K MPSA194L-T9N-B MPSA194G-T9N-B MPSA194L-T9N-K MPSA194G-T9N-K Note: Pin assignment: B: Base C: Collector E: Emitter Package TO-92 TO-92 TO-92 TO-92 TO-92NL TO-92NL Pin Assignment 1 2 3 E B C E B C E C B E C B E C B E C B Packing Tape Box Bulk Tape Box Bulk Tape Box Bulk MARKING INFORMATION TO-92NL 1 TO-92 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-026.E MPSA194 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO -400 V Collector to Emitter Voltage VCEO -400 V Emitter to Base Voltage VEBO -6 V Collector Current IC -800 mA Collector Dissipation (TA=25C) PC 1.0 W Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collect Cut-off Current Collect Cut-off Current Emitter Cut-off Current DC Current Gain SYMBOL BVCBO BVCEO ICBO ICEO IEBO hFE Base-Emitter Saturation Voltage VBE(SAT) Collector-Emitter Saturation Voltage VCE(SAT) Output Capacitance Current Gain Bandwidth Product COB fT TEST CONDITIONS IC =-100µA, IE =0A IC =-1mA, IB =0A VCB =-400 V, IE =0A VCB =-200 V, VBE =0V VEB = -6 V, IC =0A VCE =-10 V ,IC =-1mA VCE =-10 V ,IC =-20mA VCE =-10 V ,IC =-80mA IC =-20mA, IB =- 2mA IC =-20mA, IB =- 4mA IC =-80mA, IB =- 2mA VCB =-20 V, IE =0A, f =1MHz VCE =-20V, IE =-10A, f =1MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -400 -400 50 50 40 TYP MAX UNIT V V -10 µA -1 µA -0.2 µA 800 -0.9 -0.2 -1.2 30 10 V V V pF MHZ 2 of 4 QW-R201-026.E Collector Current , IC(mA) Collector Current , IC(µA) Collector Current , IC(mA) Collector Current , IC(mA) Emitter Current , IE(µA) MPSA194 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-026.E 3 of 4 MPSA194 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-026.E