• 1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444 CD2810 CD5711 CD5712 CD6857 CD6858 CD6916 • 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW 15 MILS 3 MILS MAXIMUM RATINGS Operating Temperature: -55°C to +125°C Storage Temperature: -65°C to +150°C BACKSIDE IS CATHODE FIGURE 1 ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified CDI MINIMUM MAXIMUM MAXIMUM MAXIMUM REVERSE MAXIMUM TYPE BREAKDOWN FORWARD FORWARD LEAKAGE CURRENT CAPACITANCE @ NUMBER VOLTAGE VOLTAGE VOLTAGE VBR @ 10 µ A VF @ 1 mA VF @ IF V (2) NUMBER VOLTS VOLTS VOLTS @ mA nA VOLTS PICO FARADS CD2810 20 0.41 1.0 @ 35 100 15 1.2 CD5711 70 0.41 1.0 @15 200 50 2.0 2 CD5712 20 0.41 1.0 @ 35 150 16 1.2 1 CD6857 20 0.35 0.75 @ 35 150 16 4.5 2 CD6858 70 0.36 0.65 @ 15 200 50 4.5 2 0.27 @ 0.1 100 1 0.34 @ 1.0 200 20 5 2 0.47 @ 10.0 500 40 CD6916 40 (2) 0.34 NOTES: (1) Effective Minority Carrier Lifetime (τ) is 100 Pico Seconds (2) CD6916 V BR 1 5.5 MILS CT 15 MILS 1R @ VR = 0 VOLTS R f = 1.0 MHZ FIGURE BACKSIDE IS CATHODE FIGURE 2 DESIGN DATA measured @ 500 nanoamps METALLIZATION: Top: (Anode)...................... ..Al Back: (Cathode)................. Au o AL THICKNESS.................25,000 A Min o GOLD THICKNESS... ..........4,000 A Min CHIP THICKNESS............. .........10 Mils TOLERANCES: ALL Dimensions + 2 mils, Except Anode Pad Where Tolerance is + 0.5 mils. 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] CD2810, CD5711, CD5712, CD6857, CD6858 and CD6916 10,000 IR – REVERSE CURRENT (nA) IF – FORWARD CURRENT (mA) 100 10 1.0 .1 1000 100 10 .01 1.0 0 .2 .4 .6 .8 1.0 1.2 0 5.0 10 15 20 25 VF – FORWARD VOLTAGE (V) VR – REVERSE VOLTAGE (V) (PULSED) Figure 1. I-V Curve Showing Typical Forward Voltage Variation with Temperature for the CD5712 and CD2810 Schottky Diodes. Figure 2. CD5712 and CD2810 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures. 30 100,000 50 10 5 1 .5 .1 .05 .01 RD – DYNAMIC RESISTANCE (!!) IR – REVERSE CURRENT (nA) IF – FORWARD CURRENT (mA) 1000 10,000 1000 100 10 1 0 .2 .4 .6 .8 1.0 1.2 VF – FORWARD VOLTAGE (V) Figure 3. I-V Curve Showing Typical Forward Voltage Variation with Temperature for Schottky Diode CD5711. 0 10 20 30 40 50 60 VR – REVERSE VOLTAGE (V) (PULSED) Figure 4. CD5711 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures. 100 10 1 .1 1.0 10 IF – FORWARD CURRENT (mA) (PULSED) Figure 5. Typical DynamiC Resistance (RD) vs. Forward Current (IF). 100