TO -22 0F BYC10X-600P Hyperfast power diode 9 May 2014 Product data sheet 1. General description Hyperfast power diode in a SOD113A (2-lead TO-220-F) plastic package. 2. Features and benefits • • • • • • Fast switching Isolated plastic package Low leakage current Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFET or IGBT 3. Applications • • • Active PFC in air conditioner High frequency switched-mode power supplies Continuous Current Mode (CCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V - - 10 A IF = 10 A; Tj = 150 °C; Fig. 6 - 1.3 2 V IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; - 12 18 ns δ = 0.5; Th ≤ 61 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BYC10X-600P NXP Semiconductors Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode Graphic symbol mb K A 001aaa020 2 A anode mb n.c. mounting base; isolated 1 2 TO-220F (SOD113A) 6. Ordering information Table 3. Ordering information Type number Package BYC10X-600P Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220F "full pack" SOD113A 7. Marking Table 4. Marking codes Type number Marking code BYC10X-600P BYC10X-600P 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current δ = 0.5; Th ≤ 61 °C; square-wave pulse; - 10 A - 20 A Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Th ≤ 61 °C; squarewave pulse BYC10X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2/9 BYC10X-600P NXP Semiconductors Hyperfast power diode Symbol Parameter Conditions Min Max Unit IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave - 150 A - 165 A pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 Tstg storage temperature -65 175 °C Tj junction temperature - 175 °C aaa-010181 35 Ptot (W) 30 aaa-010182 25 Ptot (W) δ=1 a = 1.57 1.9 20 2.2 0.5 25 2.8 20 15 0.2 4.0 0.1 15 10 10 5 5 0 Fig. 1. 0 5 10 IF(AV) (A) 0 15 Forward power dissipation as a function of average forward current; square waveform; maximum values Fig. 2. aaa-010187 15 2.5 5 7.5 IF(AV) (A) 10 Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values aaa-010184 104 IFSM (A) IF(AV) (A) 61 °C 10 103 5 102 0 -50 Fig. 3. 0 0 50 100 BYC10X-600P Product data sheet 10 10-5 150 200 Th (°C) Forward current as a function of heatsink temperature; maximum values IF Fig. 4. t tp Tj(init) = 25 °C max 10-4 10-3 tp (s) 10-2 Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 9 May 2014 IFSM © NXP Semiconductors N.V. 2014. All rights reserved 3/9 BYC10X-600P NXP Semiconductors Hyperfast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; Fig. 5 - - 4.8 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 55 - K/W aaa-010188 10 Zth(j-h) (K/W) 1 10-1 δ = 0.5 δ = 0.3 δ = 0.1 10-2 δ = 0.05 P δ = 0.02 δ = 0.01 10-3 δ= single pulse tp 10-4 10-6 Fig. 5. 10-5 10-4 10-3 10-2 10-1 tp T t T 1 10 tp (s) Transient thermal impedance from junction to heatsink as a function of pulse duration 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance f = 1 MHz; from cathode to external heatsink - 10 - pF Conditions Min Typ Max Unit IF = 10 A; Tj = 25 °C; Fig. 6 - 2.5 3.2 V 11. Characteristics Table 8. Characteristics Symbol Parameter Static characteristics VF forward voltage BYC10X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4/9 BYC10X-600P NXP Semiconductors Hyperfast power diode Symbol Parameter IR reverse current Conditions Min Typ Max Unit IF = 10 A; Tj = 150 °C; Fig. 6 - 1.3 2 V VR = 600 V; Tj = 25 °C - - 10 µA VR = 600 V; Tj = 150 °C - - 0.8 mA IF = 10 A; VR = 200 V; dIF/dt = 200 A/ - 26 - nC - 83 - nC - 12 18 ns - 19 - ns - 26 - ns - 34 - ns - 2 - A - 4.8 - A Dynamic characteristics Qr recovered charge µs; Tj = 25 °C; Fig. 7 IF = 10 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 trr IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; reverse recovery time Tj = 25 °C; Fig. 7 IF = 10 A; VR = 400 V; dIF/dt = 500 A/ µs; Tj = 25 °C; Fig. 7 IF = 10 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 IF = 10 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 IRM IF = 10 A; VR = 200 V; dIF/dt = 200 A/ peak reverse recovery current µs; Tj = 25 °C; Fig. 7 IF = 10 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 aaa-010185 20 IF IF (A) dlF dt 15 trr 10 (1) (2) time (3) 25 % Qr 5 IR 0 Fig. 6. 100 % IRM 003aac562 0 1 2 3 VF (V) 4 Fig. 7. Reverse recovery definitions; ramp recovery Forward current as a function of forward voltage BYC10X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5/9 BYC10X-600P NXP Semiconductors Hyperfast power diode 12. Package outline Plastic single-ended package; isolated heasink mounted; 1 mounting hole; 2-lead TO-220F 'full pack' SOD113A A A1 E z(2) P q m T(4) D HE j(3) L1(1) k(3) Q L 1 b1 2 c w b e 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A A1 b b1 c D E e 4.6 3.1 0.9 1.1 0.7 15.8 10.3 4.0 2.5 0.7 0.9 0.4 15.2 9.7 HE max 5.08 19.0 j(3) k(3) L L1(1) m P Q 2.7 0.8 14.4 3.3 6.5 3.2 2.8 1.7 0.4 13.5 2.8 6.3 3.0 2.3 q T(4) W z(2) 2.6 2.55 0.4 0.8 Note 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. 3. Dot lines area designs may vary. 4. Eject pin mark is for reference only. Outline version SOD113A Fig. 8. sod113a_po References IEC JEDEC JEITA European projection Issue date 14-01-14 14-04-10 2 LEADS TO220F Package outline TO-220F (SOD113A) BYC10X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6/9 BYC10X-600P NXP Semiconductors Hyperfast power diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 13. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Isolation characteristics ........................................4 11 Characteristics ....................................................... 4 12 Package outline ..................................................... 6 13 13.1 13.2 13.3 13.4 Legal information ...................................................7 Data sheet status ................................................. 7 Definitions .............................................................7 Disclaimers ...........................................................7 Trademarks .......................................................... 8 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 May 2014 BYC10X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9/9