FRAF801G - FRAF807G Isolated 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers ITO-220AC .185(4.7) .173(4.4) .406(10.3) .390(9.90) .124(3.16) .118(3.00) .134(3.4)DIA .113(3.0)DIA .272(6.9) .248(6.3) Features .606(15.5) .583(14.8) Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss .063(1.6) MAX .161(4.1) .146(3.7) Mechanical Data .112(2.85) .100(2.55) Cases: ITO-220AC molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, Lead free. Leads solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C /10 seconds 0.25”,(6.35mm) from case. Mounting position: Any Weight: 2.24 grams Mounting torque: 5 in – 1bs. max. .110(2.8) .098(2.5) .055(1.4) .043(1.1) .030(0.76) .020(0.50) .035(0.9) .020(0.5) .071(1.8) MAX .543(13.8) .512(13.2) 2 .100(2.55) .100(2.55) PIN 1 PIN 2 CASE Case Positive Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Symbol FRAF FRAF FRAF FRAF FRAF FRAF FRAF Units VRRM VRMS VDC 801G 802G 803G 804G 805G 806G 807G 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V Maximum Average Forward Rectified Current @TC = 55 oC I(AV) 8.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Maximum Instantaneous Forward Voltage @ 8.0A VF Maximum DC Reverse Current @ T C=25 oC at Rated DC Blocking Voltage @ TC=125 oC IR 1.3 5.0 100 Maximum Reverse Recovery Time ( Note 2 ) Trr Typical Junction Capacitance ( Note 1 ) T J=25 oC Cj V uA uA nS pF o C/W o C Typical Thermal Resistance (Note 3) 250 50 5.0 -65 to +150 TJ ,TSTG 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate. Operating and Storage Temperature Range Notes: R θJC 150 500 Version: A06 RATINGS AND CHARACTERISTIC CURVES (FRAF801G THRU FRAF807G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS 100 8 6 4 2 0 0 50 100 150 o CASE TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 Tj=75 0C 4 2 1 PEAK FORWARD SURGE CURRENT. (A) Tj=25 0C 0.4 150 0.2 TJ=125 0C 125 0.1 8.3ms Single Half Sine Wave JEDEC Method 100 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 75 50 400 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 25 200 100 0 2 5 10 20 50 100 INSTANTANEOUS FORWARD CURRENT. (A) 1 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE 120 Tj=25 0C f=1.0MHz Vsig=50mVp-p 100 CAPACITANCE.(pF) Tj=125 0C 40 INSTANTANEOUS REVERSE CURRENT. ( A) AVERAGE FORWARD CURRENT. (A) 10 80 60 40 40 20 10 4 2 1 0.4 20 0 0.1 Tj=25oC Pulse Width=300 s 1% Duty Cycle 0.2 0.5 1 5 10 50 100 0.1 0.6 500 1000 REVERSE VOLTAGE. (V) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE trr +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06