AF4407P P-Channel 30-V (D-S) MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack applications These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Product Summary VDS (V) rDS(on) (mΩ) ID (A) -30 9@VGS=-10V 13@VGS=-4.5V -15 -11 Pin Descriptions Pin Assignments S 1 8 D S 2 7 D S 3 6 D G 4 5 D Pin Name Description S G D Source Gate Drain SOP-8 Ordering information Feature F :MOSFET A X 4407P X X X PN Package Lead Free Packing S: SOP-8 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Jul 16, 2004 1/5 AF4407P P-Channel 30-V (D-S) MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDS VGS Parameter TA=25ºC TA=70ºC ID Continuous Drain Current (Note 1) IDM IS Pulsed Drain Current (Note 2) Continuous Source Current (Diode Conduction) (Note 1) TA=25ºC Power Dissipation (Note 1) TA=70ºC Operating and Storage Junction Temperature Range PD TJ, TSTG Rating -30 ±25 -15 -11 ±50 -2.1 3.1 2.3 -55 to 150 Drain-Source Voltage Gate-Source Voltage Units V V A A A W ºC Thermal Resistance Ratings Symbol RθJC RθJA Parameter Maximum Junction-to-Case (Note 1) Maximum Junction-to-Ambient (Note 1) Maximum 25 50 t < = 5 sec t < = 5 sec Units ºC/W ºC/W Note 1: surface Mounted on 1”x 1” FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (TA=25ºC unless otherwise noted) Symbol Static V(BR)DSS VGS(th) IGSS Min. Limits Typ. Max. -30 -1 - -1.6 - -3 ±100 -1 - - -5 -50 - 7.3 10 9 13 - 9 11 - 44 -0.7 -1.2 S V VDS=-15V, VGS=-10V, ID=-13A - 71 12 15 100 - nC VDD=-15V, RL=6Ω, ID=-1A, VGEN=-10V - 19 11 121 68 36 21 186 112 nS Parameter Drain-Source breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage IDSS Zero Gate Voltage Drain Current ID(on) On-State Drain Current (Note 3) rDS(on) Drain-Source On-Resistance (Note 3) gfs Forward Tranconductance (Note 3) VSD Diode Forward Voltage Dynamic (Note 4) Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Switching td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall-Time Test Conditions VGS=0V, ID=-250uA VDS= VGS, ID=-250uA VDS=0V, VGS=±25V VDS=-24V, VGS=0V VDS=-24V, VGS=0V, TJ=55ºC VGS=-5V, VDS=-10V VGS=-10V, ID=-13A VGS=-4.5V, ID=-11A VGS=-10V, ID=-13A, TJ=55ºC VGS=-5V, ID=-13A IS=2.1A, VGS=0V Unit V V nA uA A mΩ Note 3: Pulse test: PW < 300us duty cycle < 2%. Note 4: Guaranteed by design, not subject to production testing. Anachip Corp. www.anachip.com.tw Rev. 1.0 Jul 16, 2004 2/5 AF4407P P-Channel 30-V (D-S) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 3. On-Resistance Variation With Temperature Figure 4. On-Resistance Variation with Gate to Source Voltage Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation With Source Current and Temperature Anachip Corp. www.anachip.com.tw Rev. 1.0 Jul 16, 2004 3/5 AF4407P P-Channel 30-V (D-S) MOSFET Typical Performance Characteristics (Continued) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction To Ambient Figure 11. Transient Thermal Response Curve Anachip Corp. www.anachip.com.tw Rev. 1.0 Jul 16, 2004 4/5 AF4407P P-Channel 30-V (D-S) MOSFET Marking Information SOP-8L ( Top View ) 8 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 4407P AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 1 Year code: "4" =2004 ~ Factory code Package Information H E Package Type: SOP-8L L VIEW "A" D 0.015x45 C B A1 e 7 (4X) A A2 7 (4X) VIEW "A" y Symbol A A1 A2 B C D E e H L y θ Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 O O 8 0 Anachip Corp. www.anachip.com.tw Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 O O 0 8 Rev. 1.0 Jul 16, 2004 5/5