ZSELEC DB105S 1.0a surface mount glass passivated bridge rectifier Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
DB101S – DB107 S
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material – UL Recognition Flammability
Classification 94V-O
G
+
~
~
B
A
D
E
C
L
DB-S
Dim
Min
Max
A
7.40
7.90
B
6.20
6.50
C
—
0.25
D
0.33
0.08
E
9.30
10.30
G
1.02
1.53
H
8.00
8.51
J
2.15
3.40
K
5.00
5.20
L
1.20
0.90
All Dimensions in mm
H
Mechanical Data
!
J
Case: DB -S, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Weight: 1.0 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
K
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TA = 40°C
Symbol
DB
101S
DB
102S
DB
103S
DB
104S
DB
105S
DB
106S
DB
107 S
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
50
A
Forward Voltage per element
@IF = 1.0A
VFM
1.1
V
@TA = 25°C
@TA = 125°C
IRM
5.0
500
µA
Cj
25
pF
Typical Thermal Resistance per leg (Note 2)
RθJA
RθJL
40
15
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance per element (Note 1)
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on PC board with 13mm2 copper pad.
DB101S - DB107S
1 of 2
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Z ibo Seno Electronic Engineering Co., Ltd.
DB101S – DB107 S
10
60 Hz Resistive or
Inductive load
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
1.0
0.5
Tj = 25°C
Pulse Width = 300µs
2% duty cycle
1.0
0.1
0.01
0
40
60
80
120
100
140
0.4
1.0
1.4
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
60
100
Single half-sine-Wave
(JEDEC M ethod)
Tj = 25°c
f = 1.0 Mhz
Vsig = 50 mV p-p
50
40
CJ, CAPACITANCE (pF)
IFSM , PEAK FORWARD SURGE CURRENT (A)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
0.8
0.6
30
20
10
10
0
1
1
10
100
10
1
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typ Junction Capacitance (per element)
NUM BER OF CYCLES AT 60 Hz
Fig. 3 M ax Non-Repetitive Peak Forward Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
DB101S - DB107S
2 of 2
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