HP AT-33225-TR1 4.8 v npn common emitter output power transistor for amps, etacs phone Datasheet

4.8 V NPN Common Emitter
Output Power Transistor
for␣ AMPS, ET ACS Phones
Technical Data
AT-33225
Features
• 4.8 Volt Operation
• +31.0 dBm Pout @ 900 MHz,
Typ.
MSOP-3 Surface Mount
Plastic Package
Outline 25
• 70% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• -29 dBc IMD3 @ Pout of
24␣ dBm per tone, 900 MHz,
Typ.
Pin Configuration
COLLECTOR
4
• Internal Input Pre-Matching
Facilitates Cascading
• 50% Smaller than SOT-223
Package
EMITTER 1
Applications
2
3 EMITTER
BASE
• Output Power Device for
AMPS and ETACS Handsets
• 900 MHz ISM
4-71
Description
Hewlett Packard’s AT-33225 is a
low cost, NPN power silicon
bipolar junction transistor housed
in a miniature MSOP-3 surface
mount plastic package. This
device is designed for use as an
output device for AMPS and
ETACS mobile phones. The
AT-33225 features over 1 watt
CW␣ output power when operated
at 4.8 volts. Excellent gain and
superior efficiency make the
AT-33225 ideal for use in battery
powered systems.
The AT-33225 is fabricated with
Hewlett Packard’s 10 GHz Ft SelfAligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, selfalignment techniques, and gold
metalization in the fabrication of
these devices.
5965-5910E
AT-33225 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
W
°C
°C
Absolute
Maximum[1]
1.4
16.0
9.5
640
1.6
150
-65 to 150
Thermal Resistance[3]:
θjc = 40°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 25 mW/°C for TC > 85°C.
Tc is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.
3. Using the liquid crystal technique,
VCE = 4.5 V, Ic = 100 mA, Tj =150°C,
1- 2␣ µm “hot-spot” resolution.
Electrical Specifications, TC = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ. Max.
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A,
unless otherwise specified
Pout
Output Power [1]
Pin = +22 dBm
dBm
+30.0
+31.0
ηC
Collector Efficiency [1]
Pin = +22 dBm
%
60
70
IMD3
3rd Order Intermodulation Distortion, 2 Tone Test,
Pout each Tone = +24 dBm [1]
F1 = 899 MHz
F2 = 901 MHz
dBc
Mismatch Tolerance, No Damage [1]
BVEBO
Emitter-Base Breakdown Voltage
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
hFE
Forward Current Transfer Ratio
ICEO
Collector Leakage Current
-29
Pout = +31 dBm
any phase, 2 sec duration
7:1
IE = 0.4 mA, open collector
V
1.4
IC = 2.0 mA, open emitter
V
16.0
IC = 10.0 mA, open base
V
9.5
VCE = 3 V, IC = 180 mA
—
80
VCEO = 5 V
µA
150
330
30
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (ETACS/ISM).
4-72
AT-33225 Typical Performance, TC = 25°C
Frequency = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A (ETACS/ISM), unless otherwise specified.
70
27
Pout
21
50
18
40
ηc
15
30
12
20
9
10
6
2
6
10
14
18
30
25
20
15
10
3.6 V
4.8 V
6.0 V
5
0
22 24
0
6
-15
-20
26
14
18
22
18
14
TC = +85°C
TC = +25°C
TC = –40°C
2
6
10
14
18
50
40
30
3.6 V
4.8 V
6.0 V
20
10
2
0
-30
22 24
INPUT POWER (dBm)
Figure 4. Output Power vs. Input
Power Over Temperature.
-45
11
IMD3
15
17
19
21
23
25
27
OUTPUT POWER/TONE (dBm)
Figure 5. IMD3, IMD5 vs. Output
Power Per Tone.
4-73
14
18
22 24
Γ source = 0.82 ∠ -163
Γ load = 0.67 ∠ -174
-5
Output R.L.
-10
-15
-20
Input R.L.
-25
IMD5
13
10
Figure 3. Collector Efficiency vs.
Input Power Over Bias Voltage.
5
-40
6
INPUT POWER (dBm)
Γ source = 0.82 ∠ -163
Γ load = 0.67 ∠ -174
-35
6
60
22 24
-25
IMD (dBc)
OUTPUT POWER (dBm)
10
Figure 2. Output Power vs. Input
Power Over Bias Voltage.
Γ source = 0.82 ∠ -163
Γ load = 0.67 ∠ -174
10
70
INPUT POWER (dBm)
Figure 1. Output Power and Collector
Efficiency vs. Input Power.
30
Γ source = 0.82 ∠ -163
Γ load = 0.67 ∠ -174
80
0
2
INPUT POWER (dBm)
34
90
Γ source = 0.82 ∠ -163
Γ load = 0.67 ∠ -174
RETURN LOSS (dB)
24
60
35
COLLECTOR EFFICIENCY (%)
80
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
90
Γ source = 0.82 ∠ -163
Γ load = 0.67 ∠ -174
30
COLLECTOR EFFICIENCY (%)
33
-30
800
850
900
950
1000
FREQUENCY (MHz)
Figure 6. Input and Output Return
Loss vs. Frequency.
AT-33225 Typical Performance, TC = 25°C
Frequency = 836.5 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit B (AMPS), unless otherwise specified.
27
70
24
60
Pout
21
50
18
40
ηc
15
30
12
20
9
10
6
2
6
10
14
18
0
22 24
INPUT POWER (dBm)
RETURN LOSS (dB)
0
Γ source = 0.81 ∠ -165
Γ load = 0.66 ∠ -174
-5
Output R.L.
25
20
15
10
3.6 V
4.8 V
6.0 V
5
0
6
10
14
-15
Input R.L.
-20
800
836.5
850
900
18
22 24
Figure 8. Output Power vs. Input
Power Over Bias Voltage.
-10
-25
750
Γ source = 0.81 ∠ -165
Γ load = 0.66 ∠ -174
80
70
60
50
40
30
3.6 V
4.8 V
6.0 V
20
10
0
2
INPUT POWER (dBm)
Figure 7. Output Power and Collector
Efficiency vs. Input Power.
5
30
90
Γ source = 0.81 ∠ -165
Γ load = 0.66 ∠ -174
COLLECTOR EFFICIENCY (%)
80
35
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
30
90
Γ source = 0.81 ∠ -165
Γ load = 0.66 ∠ -174
COLLECTOR EFFICIENCY (%)
33
950
FREQUENCY (MHz)
Figure 10. Input and Output Return
Loss vs. Frequency.
4-74
2
6
10
14
18
22 24
INPUT POWER (dBm)
Figure 9. Collector Efficiency vs.
InputPower Over Bias Voltage.
AT-33225 Typical Large Signal Impedances
10.0
VCE = 4.8 V, ICQ = 6 mA, Pout = +31.0 dBm
Γ
Γ
source
Mag.
0.77
0.80
0.82
0.82
0.83
Ang.
-162
-169
-164
-163
-166
9.0
load
Mag.
0.64
0.67
0.64
0.67
0.74
Ccb (pF)
Freq.
MHz
750
800
850
900
950
9.5
Ang.
-174
-173
-175
-174
-175
8.5
8.0
7.5
7.0
6.5
6.0
0
2
4
6
8
10
Vcb (V)
Figure 11. Collector-Base
Capacitance vs. Collector-Base
Voltage (DC Test).
SPICE Model Parameters
Die Model
Packaged Model
Cbc
CPad
C
CPad
RB
LB2
CPad
B
Die
RB
LB3
CM
LE2
Die Area = 1.2
CPad = 0.3 pF
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
NR
Value
280
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
0.9886
E1
Label
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
IRB
RBM
RE
RC
E2
LB1
Value
1E-9
1.11
3.598E-15
3
0.8E-12
0.4831
0.2508
0.001
0.999
6.16E-12
1.186
0.5965
0.752
0
0.01
1.27
0.107
R1
B
RB
LB2
Die
RB
LB3
LC1
Cce
CM
Cbe
LE2
Label
Cbc
Cbe
Cce
CM
LB1
LB2
LB3
LE1
LE2
LC1
RB
R1
4-75
LE2
Value
0.80 pF
0.006 pF
3.17 pF
20.8 pF
0.63 nH
0.10 nH
0.87 nH
0.35 nH
0.78 nH
0.74 nH
0.1 Ω
0.2 Ω
LE2
R1
LE1
E
C
AT-33225 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω
VCE = 3.6 V, IC = 200 mA, TC = 25°C
Freq.
S11
GHz
Mag.
Ang.
dB
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
0.88
0.89
0.88
0.85
0.77
0.70
0.71
0.93
0.98
0.98
0.98
-164
-174
178
172
168
171
178
178
169
163
159
27.0
21.2
13.6
9.1
8.2
8.5
8.2
2.3
-5.5
-13.6
-23.2
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
22.26
11.42
4.80
2.85
2.58
2.67
2.57
1.30
0.53
0.21
0.07
99
91
79
62
38
13
-10
-68
-97
-119
-163
-34.9
-34.0
-30.5
-25.8
-23.2
-23.4
-26.0
-26.6
-20.5
-18.1
-16.4
0.018
0.020
0.030
0.051
0.069
0.068
0.050
0.047
0.094
0.125
0.151
26
32
47
51
40
25
14
93
86
78
72
0.58
0.57
0.56
0.49
0.34
0.36
0.59
0.98
0.97
0.93
0.90
-153
-168
-179
175
-177
-142
-133
-162
180
170
164
22.76
11.69
4.91
2.89
2.58
2.62
2.53
1.35
0.56
0.22
0.08
100
91
78
61
37
13
-9
-66
-97
-119
-159
-34.4
-33.6
-30.2
-26.0
-23.6
-24.0
-26.4
-26.7
-20.5
-18.1
-16.5
0.019
0.021
0.031
0.050
0.066
0.063
0.048
0.046
0.094
0.125
0.150
25
30
44
49
39
26
17
93
86
78
72
0.55
0.53
0.52
0.45
0.33
0.38
0.59
0.98
0.97
0.92
0.90
-149
-166
-178
177
-171
-138
-132
-161
-179
171
165
23.07
11.86
4.97
2.93
2.59
2.63
2.53
1.37
0.57
0.23
0.08
100
91
78
61
37
13
-9
-65
-96
-119
-158
-34.4
-33.6
-30.5
-26.2
-23.7
-24.2
-26.6
-26.7
-20.5
-18.1
-16.5
0.019
0.021
0.030
0.049
0.065
0.062
0.047
0.046
0.094
0.125
0.150
25
30
44
49
39
26
18
94
86
78
72
0.54
0.52
0.51
0.44
0.32
0.38
0.60
0.98
0.97
0.92
0.90
-149
-166
-178
177
-169
-137
-131
-160
-179
171
165
VCE = 4.8 V, IC = 150 mA, TC = 25°C
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
0.87
0.88
0.88
0.85
0.78
0.72
0.72
0.93
0.98
0.98
0.98
-162
-172
179
172
169
172
178
177
169
163
159
27.1
21.4
13.8
9.2
8.2
8.4
8.1
2.6
-5.1
-13.0
-22.2
VCE = 6.0 V, IC = 150 mA, TC = 25°C
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
0.87
0.88
0.88
0.85
0.78
0.72
0.73
0.92
0.98
0.98
0.98
-161
-172
179
173
169
172
177
177
169
163
158
27.3
21.5
13.9
9.3
8.3
8.4
8.1
2.7
-5.0
-12.7
-21.7
Typical Performance
GAIN (dB)
20
30
MAG
40
MSG
20
MSG
GAIN (dB)
30
40
MSG
10
|S21|2
0
30
MAG
10
|S21|2
0
|S21|2
-10
-20
-20
-20
0.75
1.00
1.50
2.00
-30
0.05
0.25
0.75
1.00
1.50
2.00
MSG
0
-10
0.25
MAG
10
-10
-30
0.05
MSG
20
MSG
GAIN (dB)
40
-30
0.05
0.25
0.75
1.00
1.50
2.00
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency, VCE = 3.6 V,
IC = 200 mA.
Figure 13. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency, VCE = 4.8 V,
IC = 150 mA.
Figure 14. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency, VCE = 6.0 V,
IC = 150 mA.
4-76
Test Circuit A: Test Circuit Board Layout @ 900 MHz (ETACS/ISM)
VBB
VBB
VCC
R2
R1
T1
C8 C9
L2
L1
R3
C2
VCC
C5
C3
R4
R5
9/96
C6
38.1 (1.5)
C1
C7
C4
INPUT
PA3 DEMO
C10
OUTPUT
B–MFG0141
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2
100.0 pF
100.0 pF
100.0 nF
7.5 pF
100.0 nF
100.0 pF
5.1 pF
1.5 µF
10.0 µF
100.0 pF
2.2 Ω
750.0 Ω
2.2 Ω
10.0 Ω
10.0 Ω
MBT 2222A
18.0 µH
18.0 µH
76.2 (3.0)
CW Test
VCE = 4.8 V
ICQ = 6.0 mA
Freq. = 900 MHz
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
NOTE:
Dimensions are shown in millimeters (inches).
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (ETACS/ISM)
VBB
2.2 Ω
750 Ω
B DC
C E Transistor
2.2 Ω
10 Ω
18 µH
VCC
CW Test
VCE = 4.8 V
ICQ = 6.0 mA
Freq. = 900 MHz
100 nF
10 Ω
100 pF
100 pF
80 Ω
λ/4 @ 900 MHz
80 Ω
18 µH
100 nF
100 pF
RF OUT
50 Ω
= 14.35 (.565)
RF IN
7.5 pF
10 µF
λ/4 @ 900 MHz
50 Ω
100 pF
1.5 µF
= 7.06 (.278)
4-77
5.1 pF
Test Circuit B: Test Circuit Board Layout @ 836.5 MHz (AMPS)
VBB
VCC
VBB
C2
R2
R1
VCC
C6
L1
R4
R3
T1
C8 C9
L2
R5
9/96
C5
C4
38.1 (1.5)
C1
C7
C3
INPUT
PA3 DEMO
C10
OUTPUT
B–MFG0141
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2
100.0 pF
100.0 nF
9.5 pF
100.0 pF
100.0 pF
100.0 nF
6.8 pF
1.5 µF
10.0 µF
100.0 pF
2.2 Ω
750.0 Ω
2.2 Ω
10.0 Ω
10.0 Ω
MBT 2222A
18.0 µH
18.0 µH
76.2 (3.0)
CW Test
VCE = 4.8 V
ICQ = 6.0 mA
Freq. = 836.5 MHz
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
NOTE:
Dimensions are shown in millimeters (inches).
Test Circuit B: Test Circuit Schematic Diagram @ 836.5 MHz (AMPS)
VBB
2.2 Ω
750 Ω
B DC
C E Transistor
2.2 Ω
10 Ω
18 µH
VCC
CW Test
VCE = 4.8 V
ICQ = 6.0 mA
Freq. = 836.5 MHz
100 nF
10 Ω
100 pF
100 pF
80 Ω
λ/4 @ 836.5 MHz
80 Ω
18 µH
100 nF
100 pF
RF OUT
50 Ω
= 12.65 (.498)
RF IN
9.5 pF
10 µF
λ/4 @ 836.5 MHz
50 Ω
100 pF
1.5 µF
= 7.19 (.283)
4-78
6.8 pF
Part Number Ordering Information
Part Number
No. of Devices
AT-33225-TR1
AT-33225-BLK
Container
1000
25
7" Reel
Carrier Tape
Package Dimensions
MSOP-3 Surface Mount Plastic Package
0.18/0.25
(.007/.010)
3.12/3.23
(.123/.127)
SEE DETAIL A
R 0.25 (.010) MAX
4.62/5.03
(.182/.198)
0.76 REF
(.030)
0.51 (.020) DIA X
0.15 (.006) DEEP
REF
PIN 1
0.76 REF
(.030)
2.64/2.82
(.104/.111)
1.91
(.075)
BASIC
4.80/5.00
(.189/.197)
1.09/1.42
(.043/.056)
1.22/1.60
(.048/.063)
TOP VIEW
SEATING
PLANE
0.58/0.69
(.023/.027)
LEAD TIP
COPLANARITY
SIDE VIEW
R 0.20 (.008) MIN
R 0.20/0.33
(.008/.013)
0.25 (.010)
GAUGE PLANE
0.10/0.25
(.004/.010)
0.41/0.86
(.016/.034)
SEATING
PLANE
0° MIN/8° MAX
DETAIL A
NOTE:
DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
4-79
0.10 (.004)
Tape Dimensions and Product Orientation for Package MSOP-3
REEL
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
2.00 ± 0.05
(.079 ± .002)
1.75 (.069)
1.5 (.059)
0.30 ± 0.05
(.012 ± .002)
4.0 (.157)
12.0 ± 0.3
5.2 (.472 ± .012)
(.205)
5.50 ± 0.05
(.217 ± .002)
R 0.5 (.020) TYP
8.0
(.315)
1.5
(.059)
R 0.3
(.012)
1.75
(.069)
5.2
(.205)
NOTES:
1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
2. TOLERANCES: .X ± 0.1 (.XXX ± .004)
4-80
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