4.8 V NPN Common Emitter Output Power Transistor for␣ AMPS, ET ACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz, Typ. • -29 dBc IMD3 @ Pout of 24␣ dBm per tone, 900 MHz, Typ. Pin Configuration COLLECTOR 4 • Internal Input Pre-Matching Facilitates Cascading • 50% Smaller than SOT-223 Package EMITTER 1 Applications 2 3 EMITTER BASE • Output Power Device for AMPS and ETACS Handsets • 900 MHz ISM 4-71 Description Hewlett Packard’s AT-33225 is a low cost, NPN power silicon bipolar junction transistor housed in a miniature MSOP-3 surface mount plastic package. This device is designed for use as an output device for AMPS and ETACS mobile phones. The AT-33225 features over 1 watt CW␣ output power when operated at 4.8 volts. Excellent gain and superior efficiency make the AT-33225 ideal for use in battery powered systems. The AT-33225 is fabricated with Hewlett Packard’s 10 GHz Ft SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices. 5965-5910E AT-33225 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2] Junction Temperature Storage Temperature Units V V V mA W °C °C Absolute Maximum[1] 1.4 16.0 9.5 640 1.6 150 -65 to 150 Thermal Resistance[3]: θjc = 40°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Derate at 25 mW/°C for TC > 85°C. Tc is defined to be the temperature of the collector pin 4, where the lead contacts the circuit board. 3. Using the liquid crystal technique, VCE = 4.5 V, Ic = 100 mA, Tj =150°C, 1- 2␣ µm “hot-spot” resolution. Electrical Specifications, TC = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. Freq. = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A, unless otherwise specified Pout Output Power [1] Pin = +22 dBm dBm +30.0 +31.0 ηC Collector Efficiency [1] Pin = +22 dBm % 60 70 IMD3 3rd Order Intermodulation Distortion, 2 Tone Test, Pout each Tone = +24 dBm [1] F1 = 899 MHz F2 = 901 MHz dBc Mismatch Tolerance, No Damage [1] BVEBO Emitter-Base Breakdown Voltage BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage hFE Forward Current Transfer Ratio ICEO Collector Leakage Current -29 Pout = +31 dBm any phase, 2 sec duration 7:1 IE = 0.4 mA, open collector V 1.4 IC = 2.0 mA, open emitter V 16.0 IC = 10.0 mA, open base V 9.5 VCE = 3 V, IC = 180 mA — 80 VCEO = 5 V µA 150 330 30 Note: 1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (ETACS/ISM). 4-72 AT-33225 Typical Performance, TC = 25°C Frequency = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A (ETACS/ISM), unless otherwise specified. 70 27 Pout 21 50 18 40 ηc 15 30 12 20 9 10 6 2 6 10 14 18 30 25 20 15 10 3.6 V 4.8 V 6.0 V 5 0 22 24 0 6 -15 -20 26 14 18 22 18 14 TC = +85°C TC = +25°C TC = –40°C 2 6 10 14 18 50 40 30 3.6 V 4.8 V 6.0 V 20 10 2 0 -30 22 24 INPUT POWER (dBm) Figure 4. Output Power vs. Input Power Over Temperature. -45 11 IMD3 15 17 19 21 23 25 27 OUTPUT POWER/TONE (dBm) Figure 5. IMD3, IMD5 vs. Output Power Per Tone. 4-73 14 18 22 24 Γ source = 0.82 ∠ -163 Γ load = 0.67 ∠ -174 -5 Output R.L. -10 -15 -20 Input R.L. -25 IMD5 13 10 Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage. 5 -40 6 INPUT POWER (dBm) Γ source = 0.82 ∠ -163 Γ load = 0.67 ∠ -174 -35 6 60 22 24 -25 IMD (dBc) OUTPUT POWER (dBm) 10 Figure 2. Output Power vs. Input Power Over Bias Voltage. Γ source = 0.82 ∠ -163 Γ load = 0.67 ∠ -174 10 70 INPUT POWER (dBm) Figure 1. Output Power and Collector Efficiency vs. Input Power. 30 Γ source = 0.82 ∠ -163 Γ load = 0.67 ∠ -174 80 0 2 INPUT POWER (dBm) 34 90 Γ source = 0.82 ∠ -163 Γ load = 0.67 ∠ -174 RETURN LOSS (dB) 24 60 35 COLLECTOR EFFICIENCY (%) 80 OUTPUT POWER (dBm) OUTPUT POWER (dBm) 90 Γ source = 0.82 ∠ -163 Γ load = 0.67 ∠ -174 30 COLLECTOR EFFICIENCY (%) 33 -30 800 850 900 950 1000 FREQUENCY (MHz) Figure 6. Input and Output Return Loss vs. Frequency. AT-33225 Typical Performance, TC = 25°C Frequency = 836.5 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit B (AMPS), unless otherwise specified. 27 70 24 60 Pout 21 50 18 40 ηc 15 30 12 20 9 10 6 2 6 10 14 18 0 22 24 INPUT POWER (dBm) RETURN LOSS (dB) 0 Γ source = 0.81 ∠ -165 Γ load = 0.66 ∠ -174 -5 Output R.L. 25 20 15 10 3.6 V 4.8 V 6.0 V 5 0 6 10 14 -15 Input R.L. -20 800 836.5 850 900 18 22 24 Figure 8. Output Power vs. Input Power Over Bias Voltage. -10 -25 750 Γ source = 0.81 ∠ -165 Γ load = 0.66 ∠ -174 80 70 60 50 40 30 3.6 V 4.8 V 6.0 V 20 10 0 2 INPUT POWER (dBm) Figure 7. Output Power and Collector Efficiency vs. Input Power. 5 30 90 Γ source = 0.81 ∠ -165 Γ load = 0.66 ∠ -174 COLLECTOR EFFICIENCY (%) 80 35 OUTPUT POWER (dBm) OUTPUT POWER (dBm) 30 90 Γ source = 0.81 ∠ -165 Γ load = 0.66 ∠ -174 COLLECTOR EFFICIENCY (%) 33 950 FREQUENCY (MHz) Figure 10. Input and Output Return Loss vs. Frequency. 4-74 2 6 10 14 18 22 24 INPUT POWER (dBm) Figure 9. Collector Efficiency vs. InputPower Over Bias Voltage. AT-33225 Typical Large Signal Impedances 10.0 VCE = 4.8 V, ICQ = 6 mA, Pout = +31.0 dBm Γ Γ source Mag. 0.77 0.80 0.82 0.82 0.83 Ang. -162 -169 -164 -163 -166 9.0 load Mag. 0.64 0.67 0.64 0.67 0.74 Ccb (pF) Freq. MHz 750 800 850 900 950 9.5 Ang. -174 -173 -175 -174 -175 8.5 8.0 7.5 7.0 6.5 6.0 0 2 4 6 8 10 Vcb (V) Figure 11. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test). SPICE Model Parameters Die Model Packaged Model Cbc CPad C CPad RB LB2 CPad B Die RB LB3 CM LE2 Die Area = 1.2 CPad = 0.3 pF Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR NR Value 280 299.9 9.9E-11 2.399 33.16 0.9935 1.6E-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7E-13 1.587 1.511 0.9886 E1 Label TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB IRB RBM RE RC E2 LB1 Value 1E-9 1.11 3.598E-15 3 0.8E-12 0.4831 0.2508 0.001 0.999 6.16E-12 1.186 0.5965 0.752 0 0.01 1.27 0.107 R1 B RB LB2 Die RB LB3 LC1 Cce CM Cbe LE2 Label Cbc Cbe Cce CM LB1 LB2 LB3 LE1 LE2 LC1 RB R1 4-75 LE2 Value 0.80 pF 0.006 pF 3.17 pF 20.8 pF 0.63 nH 0.10 nH 0.87 nH 0.35 nH 0.78 nH 0.74 nH 0.1 Ω 0.2 Ω LE2 R1 LE1 E C AT-33225 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω VCE = 3.6 V, IC = 200 mA, TC = 25°C Freq. S11 GHz Mag. Ang. dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 0.88 0.89 0.88 0.85 0.77 0.70 0.71 0.93 0.98 0.98 0.98 -164 -174 178 172 168 171 178 178 169 163 159 27.0 21.2 13.6 9.1 8.2 8.5 8.2 2.3 -5.5 -13.6 -23.2 S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. 22.26 11.42 4.80 2.85 2.58 2.67 2.57 1.30 0.53 0.21 0.07 99 91 79 62 38 13 -10 -68 -97 -119 -163 -34.9 -34.0 -30.5 -25.8 -23.2 -23.4 -26.0 -26.6 -20.5 -18.1 -16.4 0.018 0.020 0.030 0.051 0.069 0.068 0.050 0.047 0.094 0.125 0.151 26 32 47 51 40 25 14 93 86 78 72 0.58 0.57 0.56 0.49 0.34 0.36 0.59 0.98 0.97 0.93 0.90 -153 -168 -179 175 -177 -142 -133 -162 180 170 164 22.76 11.69 4.91 2.89 2.58 2.62 2.53 1.35 0.56 0.22 0.08 100 91 78 61 37 13 -9 -66 -97 -119 -159 -34.4 -33.6 -30.2 -26.0 -23.6 -24.0 -26.4 -26.7 -20.5 -18.1 -16.5 0.019 0.021 0.031 0.050 0.066 0.063 0.048 0.046 0.094 0.125 0.150 25 30 44 49 39 26 17 93 86 78 72 0.55 0.53 0.52 0.45 0.33 0.38 0.59 0.98 0.97 0.92 0.90 -149 -166 -178 177 -171 -138 -132 -161 -179 171 165 23.07 11.86 4.97 2.93 2.59 2.63 2.53 1.37 0.57 0.23 0.08 100 91 78 61 37 13 -9 -65 -96 -119 -158 -34.4 -33.6 -30.5 -26.2 -23.7 -24.2 -26.6 -26.7 -20.5 -18.1 -16.5 0.019 0.021 0.030 0.049 0.065 0.062 0.047 0.046 0.094 0.125 0.150 25 30 44 49 39 26 18 94 86 78 72 0.54 0.52 0.51 0.44 0.32 0.38 0.60 0.98 0.97 0.92 0.90 -149 -166 -178 177 -169 -137 -131 -160 -179 171 165 VCE = 4.8 V, IC = 150 mA, TC = 25°C 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 0.87 0.88 0.88 0.85 0.78 0.72 0.72 0.93 0.98 0.98 0.98 -162 -172 179 172 169 172 178 177 169 163 159 27.1 21.4 13.8 9.2 8.2 8.4 8.1 2.6 -5.1 -13.0 -22.2 VCE = 6.0 V, IC = 150 mA, TC = 25°C 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 0.87 0.88 0.88 0.85 0.78 0.72 0.73 0.92 0.98 0.98 0.98 -161 -172 179 173 169 172 177 177 169 163 158 27.3 21.5 13.9 9.3 8.3 8.4 8.1 2.7 -5.0 -12.7 -21.7 Typical Performance GAIN (dB) 20 30 MAG 40 MSG 20 MSG GAIN (dB) 30 40 MSG 10 |S21|2 0 30 MAG 10 |S21|2 0 |S21|2 -10 -20 -20 -20 0.75 1.00 1.50 2.00 -30 0.05 0.25 0.75 1.00 1.50 2.00 MSG 0 -10 0.25 MAG 10 -10 -30 0.05 MSG 20 MSG GAIN (dB) 40 -30 0.05 0.25 0.75 1.00 1.50 2.00 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 12. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency, VCE = 3.6 V, IC = 200 mA. Figure 13. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency, VCE = 4.8 V, IC = 150 mA. Figure 14. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency, VCE = 6.0 V, IC = 150 mA. 4-76 Test Circuit A: Test Circuit Board Layout @ 900 MHz (ETACS/ISM) VBB VBB VCC R2 R1 T1 C8 C9 L2 L1 R3 C2 VCC C5 C3 R4 R5 9/96 C6 38.1 (1.5) C1 C7 C4 INPUT PA3 DEMO C10 OUTPUT B–MFG0141 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 pF 100.0 nF 7.5 pF 100.0 nF 100.0 pF 5.1 pF 1.5 µF 10.0 µF 100.0 pF 2.2 Ω 750.0 Ω 2.2 Ω 10.0 Ω 10.0 Ω MBT 2222A 18.0 µH 18.0 µH 76.2 (3.0) CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 900 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (ETACS/ISM) VBB 2.2 Ω 750 Ω B DC C E Transistor 2.2 Ω 10 Ω 18 µH VCC CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 900 MHz 100 nF 10 Ω 100 pF 100 pF 80 Ω λ/4 @ 900 MHz 80 Ω 18 µH 100 nF 100 pF RF OUT 50 Ω = 14.35 (.565) RF IN 7.5 pF 10 µF λ/4 @ 900 MHz 50 Ω 100 pF 1.5 µF = 7.06 (.278) 4-77 5.1 pF Test Circuit B: Test Circuit Board Layout @ 836.5 MHz (AMPS) VBB VCC VBB C2 R2 R1 VCC C6 L1 R4 R3 T1 C8 C9 L2 R5 9/96 C5 C4 38.1 (1.5) C1 C7 C3 INPUT PA3 DEMO C10 OUTPUT B–MFG0141 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 nF 9.5 pF 100.0 pF 100.0 pF 100.0 nF 6.8 pF 1.5 µF 10.0 µF 100.0 pF 2.2 Ω 750.0 Ω 2.2 Ω 10.0 Ω 10.0 Ω MBT 2222A 18.0 µH 18.0 µH 76.2 (3.0) CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 836.5 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit B: Test Circuit Schematic Diagram @ 836.5 MHz (AMPS) VBB 2.2 Ω 750 Ω B DC C E Transistor 2.2 Ω 10 Ω 18 µH VCC CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 836.5 MHz 100 nF 10 Ω 100 pF 100 pF 80 Ω λ/4 @ 836.5 MHz 80 Ω 18 µH 100 nF 100 pF RF OUT 50 Ω = 12.65 (.498) RF IN 9.5 pF 10 µF λ/4 @ 836.5 MHz 50 Ω 100 pF 1.5 µF = 7.19 (.283) 4-78 6.8 pF Part Number Ordering Information Part Number No. of Devices AT-33225-TR1 AT-33225-BLK Container 1000 25 7" Reel Carrier Tape Package Dimensions MSOP-3 Surface Mount Plastic Package 0.18/0.25 (.007/.010) 3.12/3.23 (.123/.127) SEE DETAIL A R 0.25 (.010) MAX 4.62/5.03 (.182/.198) 0.76 REF (.030) 0.51 (.020) DIA X 0.15 (.006) DEEP REF PIN 1 0.76 REF (.030) 2.64/2.82 (.104/.111) 1.91 (.075) BASIC 4.80/5.00 (.189/.197) 1.09/1.42 (.043/.056) 1.22/1.60 (.048/.063) TOP VIEW SEATING PLANE 0.58/0.69 (.023/.027) LEAD TIP COPLANARITY SIDE VIEW R 0.20 (.008) MIN R 0.20/0.33 (.008/.013) 0.25 (.010) GAUGE PLANE 0.10/0.25 (.004/.010) 0.41/0.86 (.016/.034) SEATING PLANE 0° MIN/8° MAX DETAIL A NOTE: DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 4-79 0.10 (.004) Tape Dimensions and Product Orientation for Package MSOP-3 REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE 2.00 ± 0.05 (.079 ± .002) 1.75 (.069) 1.5 (.059) 0.30 ± 0.05 (.012 ± .002) 4.0 (.157) 12.0 ± 0.3 5.2 (.472 ± .012) (.205) 5.50 ± 0.05 (.217 ± .002) R 0.5 (.020) TYP 8.0 (.315) 1.5 (.059) R 0.3 (.012) 1.75 (.069) 5.2 (.205) NOTES: 1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 2. TOLERANCES: .X ± 0.1 (.XXX ± .004) 4-80