AP4501AGEY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D1
D1
▼ Low On-resistance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
2928-8
N-CH BVDSS
RDS(ON)
6.5A
P-CH BVDSS
Description
good
20mΩ
ID
G2
S2
G1
S1
AP4501A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The 2928-8 J-lead package provides
performance and space saving like TSOP-6.
30V
-30V
RDS(ON)
45mΩ
ID
-4.5A
D1
G1
G2
1
on-resistance
D2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
+20
+20
V
Continuous Drain Current
3
6.5
-4.5
A
Continuous Drain Current
3
5.2
-3.6
A
30
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
1.38
W
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
90
℃/W
1
201208152
AP4501AGEY-HF
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=6A
-
15.9
20
mΩ
VGS=4.5V, ID=4A
-
22.4
30
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.43
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=6A
-
7.2
11.5
nC
Qgs
Gate-Source Charge
VDS=15V
-
2.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.2
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
770
1230
pF
Coss
Output Capacitance
VDS=15V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2.6
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
13
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6
-
nC
2
AP4501AGEY-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
Max.
Unit
-30
-
-
V
VGS=-10V, ID=-4A
-
35
45
mΩ
VGS=-4.5V, ID=-3A
-
55
72
mΩ
VGS=0V, ID=-250uA
2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.54
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-4A
-
6
9.6
nC
Qgs
Gate-Source Charge
VDS=-15V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
7.5
-
ns
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=-10V
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
470
750
pF
Coss
Output Capacitance
VDS=-15V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
16
Ω
Min.
Typ.
Max.
Unit
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 210oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4501AGEY-HF
N-Channel
30
40
10V
7.0V
6.0V
5.0V
V G = 4.0V
ID , Drain Current (A)
30
10V
7.0V
6.0V
5.0V
V G = 4.0V
o
T A = 150 C
ID , Drain Current (A)
o
T A =25 C
20
20
10
10
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
30
ID=4A
I D =6A
V G =10V
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
26
22
18
1.6
1.2
0.8
14
10
0.4
2
4
6
8
10
-50
0
V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
8
I D =250uA
1.2
T j =25 o C
o
T j =150 C
4
Normalized VGS(th)
IS(A)
6
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4501AGEY-HF
N-Channel
f=1.0MHz
1000
ID=6A
V DS = 15 V
8
800
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
600
4
400
2
200
C oss
C rss
0
0
0
4
8
12
1
16
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by RDS(ON)
10
ID (A)
100us
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 210℃/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
10
T j =25 o C
T j =150 o C
8
ID , Drain Current (A)
ID , Drain Current (A)
V DS =5V
20
10
6
4
2
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
5
AP4501AGEY-HF
P-Channel
30
20
T A = 150 C
16
-ID , Drain Current (A)
-ID , Drain Current (A)
20
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
o
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
o
T A = 25 C
10
12
8
4
0
0
0
2
4
6
8
10
0
2
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
2.0
70
I D = -4 A
V G = -10 V
ID=-3A
T A =25 o C
1.6
Normalized RDS(ON)
60
RDS(ON) (mΩ)
4
-V DS , Drain-to-Source Voltage (V)
50
1.2
0.8
40
0.4
30
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2.0
I D = -250uA
1.6
6
T j =25 o C
Normalized -VGS(th)
-IS(A)
T j =150 o C
4
1.2
0.8
2
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4501AGEY-HF
P-Channel
10
I D = -4A
V DS = -15V
500
8
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
600
6
400
300
4
200
2
100
0
C oss
C rss
0
0
2
4
6
8
10
12
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
-ID (A)
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
0.1
o
1s
DC
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 210℃/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
6
V DS = -5V
5
T j =25 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
16
T j =150 o C
12
8
4
3
2
4
1
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
7