IGBT Module PowerPower Module 1200 V 600 A IGBT Module MG12600WB-BR2MM RoHS Features • T rench-gate field stop IGBT technology • F ree wheeling diodes with fast and soft reverse recovery • L ow saturation voltage and positive temperature coefficient • T emperature sense included • F ast switching and short tail current Applications Agency Approvals AGENCY • TJ max = 175 °C • Industrial and servo drives AGENCY FILE NUMBER E71639 • UPS • Welding • Solar inverters • RoHS compliant • High-power converters Module Characteristics (TC = 25 °C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit 175 °C TJ max Max. Junction Temperature TJ op Operating Temperature -40~150 °C Tstg Storage Temperature -40~125 °C Visol Isolation Breakdown Voltage AC, 50 Hz(R.M.S), t = 1 minute 3000 V to heatsink Recommended (M5) 2.5~5 N·m lolerminal Recommended (M6) 3~5 N·m 350 g Torque Weight Absolute Maximum Ratings (TC = 25 °C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ = 25 °C 1200 V ±20 V TC = 25 °C 750 A TC = 80 °C 600 A tp = 1 ms 1200 A 2500 W IGBT VCES Collector Emitter Voltage VGES Gate Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage TJ = 25 °C 1200 V IF(AV) Average Forward Current TC = 25 °C 600 A IFRM Repetitive Peak Forward Current tp = 1ms 1200 A TJ = 125 °C, t = 10 ms, VR = 0 V 45 KA2s I2t MG12600WB-BR2MM 1 331 ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 IGBT Module PowerPower Module 1200 V 600 A IGBT Module Electrical and Thermal Specifications (TC = 25 °C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ VCE = VGE, IC = 24 mA 5.0 Max Unit V IGBT VGE(th) VCE(sat) Gate Emitter Threshold Voltage chip Collector Emitter Saturation Voltage ICES terminal Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qg Gate Charge 6.4 1.7 2.15 IC = 600 A, VGE = 15 V, TJ = 125 °C 1.9 IC = 600 A, VGE = 15 V, TJ = 25 °C 2.0 IC = 600 A, VGE = 15 V, TJ = 125 °C 2.4 Cies Input Capacitance Reverse Transfer Capacitance 100 μA 1 mA 400 nA VCE = 0 V, VGE = ±15 V, TJ = 125 °C VCC = 600 V Turn-off Delay Time IC = 600 A RG = 5 Ω tf Fall Time VGE = ±15 V Inductive Load Eon Turn-on Energy Eoff Turn-off Energy ISC Short Circuit Current RthJC -400 0.5 Ω 3.4 μC 60.5 nF 1.8 nF TJ = 25 °C 250 ns TJ = 125 °C 280 ns TJ = 25 °C 220 ns TJ = 125 °C 240 ns TJ = 25 °C 1000 ns TJ = 125 °C 1100 ns ns VCE = 25 V, VGE = 0 V, f = 1 MHz Rise Time td(off) V VCE = 1200 V, VGE = 0 V, TJ = 25 °C Turn-on Delay Time tr 2.5 V VCE = 1200 V, VGE = 0 V, TJ = 125 °C VCE = 600 V, IC = 600 A , VGE = ±15 V Cres td(on) 5.4 IC = 600 A, VGE = 15 V, TJ = 25 °C TJ = 25 °C 170 TJ = 125 °C 190 ns TJ = 25 °C 20 mJ TJ = 125 °C 35 mJ TJ = 25 °C 105 mJ TJ = 125 °C 120 mJ 2400 A tpsc ≤ 10 μS , VGE = 15 V; TJ = 125 °C , VCC = 600 V Junction-to-Case Thermal Resistance (Per IGBT) 0.06 K/W 2.5 V Diode VF Forward Voltage chip tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current QRR Reverse Recovery Charge Erec Reverse Recovery Energy RthJCD IF = 600 A, VGE = 0 V, TJ = 25 °C 2.1 IF = 600 A, VGE = 0 V, TJ = 125 °C 2.2 V 330 ns IF = 600 A, VR = 600 V diF/dt = -2700 A/µs TJ = 125 °C 305 A 96 μC 42 Junction-to-Case Thermal Resistance (Per Diode) mJ 0.1 K/W NTC Characteristics (TC = 25 °C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc = 25 °C B25/50 MG12600WB-BR2MM R2 = R25 exp [B25/50 (1/T2 - 1/((298, 15 K))] 2 332 Min Typ Max Unit 5 KΩ 3375 K ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 IGBT Module PowerPower Module 1200 V 600 A IGBT Module Figure 1: Typical Output Characteristics IGBT Inverter Figure 2: Typical Output Characteristics IGBT Inverter TJ = 125 °C Figure 3: T ypical Transfer Characteristics IGBT Inverter Figure 4: Switching Energy vs. Gate Resistor IGBT Inverter Figure 5: Switching Energy vs. Collector Current IGBT Inverter Figure 6: R everse Biased Safe Operating Area IGBT Inverter MG12600WB-BR2MM 3 333 ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 IGBT Module PowerPower Module 1200 V 600 A IGBT Module Figure 7: Collector Current vs Case temperature IGBT -inverter Figure 8: F orward current vs Case temperature Diode -inverter Figure 9: Diode Forward Characteristics Diode -inverter Figure 10: S witching Energy vs Gate Resistor Diode -inverter Figure 11: Switching Energy vs Forward Current Diode-inverter Figure 12: T ransient Thermallmpedance of Diode and IGBT -inverter MG12600WB-BR2MM 4 334 ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 IGBT Module PowerPower Module 1200 V 600 A IGBT Module Figure 13: N TC Characteristics Circuit Diagram 100000 R (¡) 10000 R 1000 100 0 20 40 80 100 120 140 160 60 TC˄°C˅ Dimensions-Package WB The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12600WB-BR2MM MG12600WB-BR2MM 350 g Bulk Pack 60 Part Marking System Part Numbering System MG12600 WB - B R2 MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200 V CURRENT RATING MG12600WB-BR2MM ASSEMBLY SITE WAFER TYPE LOT NUMBER CIRCUIT TYPE 2x(IGBT+FWD) Space reserved for QR code PACKAGE TYPE 600: 600 A MG12600WB-BR2MM 5 335 ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16