PD - 91331C RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) IRHM7160 JANSR2N7432 100V, N-CHANNEL REF: MIL-PRF-19500/663 ® RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRHM7160 100K Rads (Si) 0.045Ω IRHM3160 300K Rads (Si) 0.045Ω IRHM4160 600K Rads (Si) 0.045Ω IRHM8160 1000K Rads (Si) 0.045Ω ID QPL Part Number 35*A JANSR2N7432 35*A JANSF2N7432 35*A JANSG2N7432 35*A JANSH2N7432 TO-254AA HEXFET® technol- International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 35* 35* 201 250 2.0 ±20 500 35 25 7.3 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical ) C g *Current limited by pin diameter For footnotes refer to the last page www.irf.com 1 8/14/01 IRHM7160 Pre-Irradiation @ Tj = 25°C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Typ Max Units 100 V 0.107 V/°C 0.045 Ω 2.0 16 4.0 25 250 V S( ) 6.8 100 -100 310 53 110 35 150 150 130 Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID =35A ➃ nC VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A ➃ VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =35A VDS = 50V ns VDD = 50V, ID =35A VGS =12V, RG = 2.35Ω Ω Electrical Characteristics µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally Ciss Coss Crss bonded from Source Pin to Drain Pad Input Capacitance Output Capacitance Reverse Transfer Capacitance 5300 1600 350 VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time 35* 140 1.8 520 6.1 Test Conditions A V nS µC Tj = 25°C, IS = 35A, VGS = 0V ➃ Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. *Current limited by pin diameter Thermal Resistance Parameter R thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max Units 0.50 48 0.21 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM7160 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD 100 K Rads(Si) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" ➃ On-State Resistance (TO-3) Static Drain-to-Source" ➃ On-State Resistance (TO-254AA) Diode Forward Voltage" ➃ Min Max 100 2.0 300 - 1000K Rads (Si) Test Conditions U nits Units Min Max 4.0 100 -100 25 0.045 100 1.25 4.5 100 -100 25 0.062 µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =35A 0.045 0.062 Ω VGS = 12V, ID =35A 1.8 1.8 V VGS = 0V, IS = 35A V nA 1. Part numbers IRHM7160 (JANSR2N7432) 2. Part number IRHM3160, IRHM4160 and IRH8160 (JANSF2N7432, JANSG2N7432 and JANSH2N7432) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET Energy MeV/(mg/cm )) (MeV) 28 285 36.8 305 VDS(V) Range 43 39 µm) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V 100 100 100 80 60 100 90 70 50 120 100 VDS 80 Cu 60 Br 40 20 0 0 -5 -10 -15 -20 -25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM7160 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 100 10 1 5.0V 20µs PULSE WIDTH TJ = 25 °C 1 10 10 100 TJ = 25 ° C TJ = 150 ° C 10 V DS = 50V 20µs PULSE WIDTH 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 12 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 5 10 100 Fig 2. Typical Output Characteristics 1000 1 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20µs PULSE WIDTH TJ = 150 °C 5.0V VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 50A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 8000 6000 Ciss 4000 Coss 2000 Crss 0 1 10 20 VGS , Gate-to-Source Voltage (V) 10000 IRHM7160 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 VDS , Drain-to-Source Voltage (V) 40 80 120 160 200 240 280 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) VDS = 80V VDS = 50V VDS = 20V 16 0 100 ID = 35A 100 100 TJ = 150 ° C 10 100us 1ms 10 10ms TJ = 25 ° C 1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.4 1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM7160 Pre-Irradiation 60 50 ID , Drain Current (A) RD VDS LIMITED BY PACKAGE VGS D.U.T. RG + -VDD 40 VGS 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.001 0.00001 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM7160 EAS , Single Pulse Avalanche Energy (mJ) 1400 ID 9.8A 14A BOTTOM 22A TOP 1200 15V 1000 L VDS D.U.T RG V/5 20V IAS DRIVER + - VDD 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM7160 Pre-Irradiation Foot Notes: ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=0.82mH Peak IL = 35A, VGS =12V ➂ ISD ≤ 35A, di/dt ≤ 100A/µs, VDD ≤ 100V, TJ ≤ 150°C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions TO-254AA .12 ( .005 ) 13.84 ( .545 ) 13.59 ( .535 ) 3.78 ( .149 ) 3.53 ( .139 ) -A- 20.32 ( .800 ) 20.07 ( .790 ) 17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) 3.81 ( .150 ) 2X 6.60 ( .260 ) 6.32 ( .249 ) 1 2 13.84 ( .545 ) 13.59 ( .535 ) 3 -C- 3X 1.14 ( .045 ) 0.89 ( .035 ) .50 ( .020 ) .25 ( .010 ) -B1.27 ( .050 ) 1.02 ( .040 ) LEGEND 1 - COLL 2 - EMIT 3 - GATE 3.81 ( .150 ) M C A M B M C LEGEND 1- DRAIN 2- SOURCE 3- GATE IRHM57163SED IRHM57163SEU CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.. Data and specifications subject to change without notice. 08/01 8 www.irf.com