Advance Technical Information IXFP4N100PM PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) = 1000V = 2.5A Ω ≤ 3.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Maximum Ratings VGSS VGSM Continuous Transient ID25 IDM 1000 1000 V V ± 20 ± 30 V V TC = 25°C TC = 25°C, Pulse Width Limited by TJM 2.5 8.0 A A IA EAS TC = 25°C TC = 25°C 4.0 200 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ =150°C 10 V/ns PD TC = 25°C 57 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from Case for 10 s Plastic Body for 10 s Md Mounting Torque Weight G G = Gate S = Source z z z z z BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS V z VGS = ±20V, VDS = 0V ±100 nA z IDSS VDS = VDSS, VGS = 0V 10 μA 750 μA RDS(on) VGS = 10V, ID = 2A, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved 3.3 Ω High Power Density Easy to Mount Space Savings Applications V TJ = 125°C 6.0 Plastic Overmolded Tab for Electrical Isolation Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages z Characteristic Values Min. Typ. Max. D = Drain Features z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) DS z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100295(11/10) IXFP4N100PM Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.8 VDS = 20V, ID = 2A, Note 1 Ciss Coss 3.0 S 1456 pF 90 pF 16 pF 1.6 Ω 24 ns 36 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 2A RG = 5Ω (External) Qg(on) Qgs ISOLATED TO-220 (IXFP...M) 37 ns 50 ns 26 nC 9 nC 12 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 2A Qgd 2.2 °C/W RthJC 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 4 A Repetitive, Pulse Width Limited by TJM 16 A IF = IS , VGS = 0V, Note 1 1.3 V 300 IF = 2A, -di/dt = 100A/μs VR = 100V, VGS = 0V ns 0.34 μC 5.30 A Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFP4N100PM Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 4 8 VGS = 10V 8V 7V 3.5 6 ID - Amperes 3 ID - Amperes VGS = 10V 8V 7 2.5 6V 2 1.5 7V 5 4 6V 3 2 1 5V 0.5 1 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 12 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature 35 3.0 4 VGS = 10V 7V 3.6 VGS = 10V 2.6 R DS(on) - Normalized 3.2 ID - Amperes 2.8 6V 2.4 2 1.6 1.2 0.8 5V I D = 4A 2.2 I D = 2A 1.8 1.4 1.0 0.6 0.4 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 28 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 3 VGS = 10V 2.4 TJ = 125ºC 2.5 2.0 2 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 1.4 1.5 1 1.2 TJ = 25ºC 0.5 1.0 0.8 0 0 1 2 3 4 5 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 6 7 8 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFP4N100PM Fig. 8. Transconductance 5 4.5 4.5 4 4 3.5 3.5 TJ = 125ºC 25ºC - 40ºC 3 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 5 2.5 2 25ºC 3 125ºC 2.5 2 1.5 1.5 1 1 0.5 0.5 0 TJ = - 40ºC 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 0.5 1 1.5 2 VGS - Volts 2.5 3 3.5 4 4.5 5 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 12 16 VDS = 500V 14 I D = 2A 10 I G = 10mA 12 VGS - Volts IS - Amperes 8 6 4 10 8 6 TJ = 125ºC 4 TJ = 25ºC 2 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 5 10 VSD - Volts 15 20 25 30 35 40 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 10 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 100 1 0.1 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_4N100P(45-744)11-22-10-A