PHOTO DIODE SILICON PIN LED LAMPS LPD6383 SERIES Package Dimension Description The LPD6383 series are silicon planar P/N photodiodes incorporated in plastic package that simultaneously serve as filter and are also Transparent for infrared emission their terminals are soldering tabs arranged in 2.54mm center to center spacing due to their design the diodes can vertically be assembled on pc boards arrays can be realized by multiple arrangement versatile photodetectors are suitable for diodes as well as voltaic cell operation the signal noise ratio is particularly favorable even at low illuminance the P/N photodiode are outstanding for low junction capacitance high cut-off frequency and fast switching times. They are particularly suitable for IR sound transmission and remote control the cathode of LPD6383 photodiode is marked by a stamping on the package edge 2.8 5.2 7.6 1.5MAX □0.5 TYP 16.0MIN 1 1.ANODE 2.CATHODE 2 2.54TYP NOTE:1.All dimension are In millimeters tolerance Is ±0.25 unless otherwise noted 2.Specifications are subject to change without notice •MAXIMUM RATINGS (TA=25℃) Symbol Rating nit Reverse Break Down Voltage VBR 30 V Power Dissipation PD 150 mW Operating Temperature Topr -30 ﹣ +60 ℃ Storage Temperature Tstg -40 ﹣ +60 ℃ Characteristic • ELECTRICAL CHARACTERISTICS AT (TA=℃) Characteristic Symbol Dark Current ID Short Circuit Current Isc Open Circuit Voltage Voc Total Capacitance CT Peak Wavelength of Max Sensitivity Rise Time,Fall Time DOC.NO:QW0905-LPD6383 Test Condition VR=10V Ee=0mW/c㎡ VR=5V λP=940nm Ee=0.5mW/c㎡ λP=940nm Typ Max Unit － 1.0 30 nA 1.5 2.0 － uA _ 350 － mV － 20 － pF － 940 － nm － 50 － ns Ee=0.5mW/c㎡ VR=3V f=1MHZ Ee=0mW/c㎡ λsmax tr,tf Min VR=10V RL=1KΩ REV:E Date:17 - Aug - 2005