AP3N035N
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive
D
▼ Lower Gate Charge
▼ Fast Switching Performance
BVDSS
30V
RDS(ON)
35mΩ
ID
4.5A
S
▼ RoHS Compliant & Halogen-Free
SOT-23S
G
D
Description
AP3N035 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
G
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+8
V
4.5
A
3.5
A
20
A
1.25
W
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
100
℃/W
1
201603231
AP3N035N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=4.5A
-
-
35
mΩ
VGS=2.5V, ID=2.6A
-
-
50
mΩ
VGS=1.8V, ID=1A
-
-
80
mΩ
0.3
-
1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=5A
-
24
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
9
14.4
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
5
-
ns
tr
Rise Time
ID=1A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=5V
-
19
-
ns
Ciss
Input Capacitance
V =0V
-
800
1330
pF
Coss
Output Capacitance
.VGS=15V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Min.
Typ.
-
-
DS
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=1A, VGS=0V
Max. Units
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10sec ; 300℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3N035N
20
12
5.0V
4.5V
3.5V
2.5V
V G =1.8V
10
ID , Drain Current (A)
16
ID , Drain Current (A)
T A = 150 o C
5.0V
4.5V
3.5V
2.5V
V G =1.8V
T A = 25 o C
12
8
8
6
4
4
2
0
0
0
1
2
3
0
4
0.4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.6
2
Fig 2. Typical Output Characteristics
60
2
I D =4.5A
V G =10V
I D =1A
T A =25 o C
1.8
50
1.6
40
.
Normalized RDS(ON)
RDSON (mΩ)
0.8
V DS , Drain-to-Source Voltage (V)
1.4
1.2
1
0.8
30
0.6
0.4
20
0
1
2
3
4
5
-100
V GS , Gate-to-Source Voltage (V)
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2
I D =250uA
IS(A)
Normalized VGS(th)
6
4
T j =150 o C
T j =25 o C
2
1.5
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3N035N
f=1.0MHz
1600
I D = 5A
V DS = 15V
5
1200
4
C (pF)
VGS , Gate to Source Voltage (V)
6
3
C iss
800
2
400
1
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
9
13
17
21
25
29
33
37
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this
area limited by
RDS(ON)
ID (A)
10
1
.
100us
1ms
0.1
10ms
100ms
1s
DC
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 300℃/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
6
o
T j =25 C
5
ID , Drain Current (A)
RDS(ON) (mΩ)
120
V GS =1.8V
80
V GS =2.5V
V GS =4.5V
40
0
4
3
2
1
0
0
4
8
12
16
20
I D , Drain Current (A)
Fig 11. Typ. Drain-Source on State
Resistance
24
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient
Temperature
4
AP3N035N
MARKING INFORMATION
Part Number : A13
A13SS
Date Code : SS
SS:2004,2008,2012,2016,2020...
SS:2003,2007,2011,2015,2019...
SS:2002,2006,2010,2014,2018...
SS:2001,2005,2009,2013,2017...
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