MPS MPQ4431GLE-AEC1 36v, 1a, low quiescent current, synchronous, step-down converter aec-q100 qualified Datasheet

MPQ4431
36V, 1A, Low Quiescent Current,
Synchronous, Step-Down Converter
AEC-Q100 Qualified
DESCRIPTION
FEATURES
The MPQ4431 is a frequency-programmable
(350kHz to 2.5MHz), synchronous, step-down
switching regulator with integrated, internal,
high-side and low-side power MOSFETs. It
provides up to 1A of highly efficient output
current with current mode control for fast loop
response.





The wide 3.3V to 36V input range accommodates
a variety of step-down applications in automotive
input environments and is ideal for batterypowered applications due to its extremely low
quiescent current.
The
MPQ4431
employs
advanced
asynchronous mode (AAM), which helps
achieve high efficiency in light-load condition by
scaling down the switching frequency to reduce
switching and gate driving losses.










Wide 3.3V to 36V Operating Input Range
1A Continuous Output Current
1μA Low Shutdown Mode Current
10μA Sleep Mode Quiescent Current
Internal 90mΩ High-Side and 80mΩ LowSide MOSFETs
350kHz to 2.5MHz Programmable Switching
Frequency
Fixed Output Options: 3.3V, 3.8V, 5V
Synchronize to External Clock
Selectable In-Phase or 180° Out-of-Phase
Power Good (PG) Indicator
Programmable Soft-Start (SS) Time
80ns Minimum On Time
Selectable Forced CCM or AAM
Low Dropout Mode
Over-Current Protection (OCP) with ValleyCurrent Detection and Hiccup
Available in a QFN-16 (3mmx4mm)
Package
Available with Wettable Flank
AEC-Q100 Grade-1
Standard features include soft start (SS),
external clock synchronization, enable (EN)
control, and a power good (PG) indicator. Highduty cycle and low dropout mode are provided
for automotive cold-crank condition.

Over-current protection (OCP) with valleycurrent detection is employed to prevent the
inductor current from running away. Hiccup
mode reduces the average current in shortcircuit condition greatly. Thermal shutdown
provides reliable and fault-tolerant operation.
APPLICATIONS




Automotive Systems
Industrial Power Systems
All MPS parts are lead-free, halogen-free, and adhere to the RoHS
directive. For MPS green status, please visit the MPS website under
Quality Assurance. “MPS” and “The Future of Analog IC Technology” are
registered trademarks of Monolithic Power Systems, Inc.
The MPQ4431 is available in a QFN-16
(3mmx4mm) package.
TYPICAL APPLICATION
VIN
3.3 to 36V
VIN
BST
VOUT
SW
GND
FB
MPQ4431 Rev. 1.0
3/21/2017
EN
SYNC
MPQ4431 PHASE
FREQ
VCC
PG
BIAS
SS
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1
MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
ORDERING INFORMATION
Part Number*
MPQ4431GL**
MPQ4431GL-AEC1**
MPQ4431GLE-AEC1***
Package
QFN-16 (3mmx4mm)
QFN-16 (3mmx4mm)
QFN-16 (3mmx4mm)
Top Marking
See Below
See Below
See Below
* For Tape & Reel, add suffix –Z (e.g. MPQ4431GL–Z)
** Under qualification
*** Under qualification, wettable flank
TOP MARKING (MPQ4431GL & MPQ4431GL-AEC1)
MP: MPS prefix
Y: Year code
WW: Week code
4431: First four digits of the part number
LLL: Lot number
TOP MARKING (FOR MPQ4431GLE-AEC1)
MP: MPS prefix
Y: Year code
WW: Week code
4431: First four digits of the part number
LLL: Lot number
E: Wettable lead flank
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
PACKAGE REFERENCE
TOP VIEW
FREQ
16
FB
SS
AGND
15
14
13
PHASE
1
12
VCC
VIN
2
11
BST
SW
3
10
SW
PGND
4
9
5
EN
6
SYNC
7
PG
PGND
8
BIAS
QFN-16 (3mmx4mm)
ABSOLUTE MAXIMUM RATINGS (1)
Thermal Resistance (3)
Supply voltage (VIN) ...................... -0.3V to 40V
Switch voltage (VSW) ........... -0.3V to VIN + 0.3V
BST voltage (VBST) ............................VSW + 6.5V
EN voltage (VEN) ............................ -0.3V to 40V
BIAS voltage (VBIAS) ....................... -0.3V to 20V
All other pins .................................... -0.3V to 6V
Continuous power dissipation (TA = +25°C) (2)
QFN-16 (3mmx4mm) .................................2.6W
Operating junction temperature................ 150°C
Lead temperature .................................... 260°C
Storage temperature .................. -65°C to 150°C
NOTES:
1) Absolute maximum ratings are rated under room temperature
unless otherwise noted. Exceeding these ratings may
damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ(MAX), the junction-toambient thermal resistance θJA, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD(MAX)=(TJ(MAX)TA)/ θJA. Exceeding the maximum allowable power dissipation
produces an excessive die temperature, causing the regulator
to go into thermal shutdown. Internal thermal shutdown
circuitry protects the device from permanent damage.
3) Measured on JESD51-7, 4-layer PCB.
θJA
θJC
QFN-16 (3mmx4mm) ............ 48 ....... 11 ... °C/W
Recommended Operating Conditions
Supply voltage (VIN) ....................... 3.3V to 36V
Operating junction temp. (TJ) ... -40°C to +125°C
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
ELECTRICAL CHARACTERISTICS
VIN = 12V, VEN = 2V, TJ = -40°C to +125°C, unless otherwise noted. Typical values at TJ = +25°C.
Parameter
Symbol
VIN quiescent current
IQ
VIN shutdown current
ISHDN
VIN under-voltage lockout
threshold rising
VIN under-voltage lockout
threshold hysteresis
Condition
Min
VFB = 0.85V, no load, no
switching, TJ = +25°C
VFB = 0.85V, no load, no
switching,
VEN = 0V
INUVRISING
2.4
INUVHYS
Feedback reference voltage
VREF
Switching frequency
FSW
Minimum on time (4)
TON_MIN
SYNC input low voltage
VSYNC_LOW
SYNC input high voltage
VSYNC_HIGH
Typ
Max
Units
10
18
µA
25
µA
1
5
µA
2.8
3.2
V
150
TJ = 25°C
RFREQ = 180kΩ or from sync
clock
RFREQ = 82kΩ or from sync clock
RFREQ = 27kΩ or from sync clock
mV
784
800
816
mV
792
800
808
mV
400
475
550
kHz
850
2250
1000
2500
1150
2750
kHz
kHz
80
ns
0.4
1.8
V
V
Current limit
ILIMIT_HS
Duty cycle = 40%
2.1
2.5
2.9
A
Low-side valley current limit
ILIMIT_LS
VOUT = 3.3V, L = 4.7µH
1.1
1.35
1.6
A
ZCD current
IZCD
Reverse current limit
50
mA
ILIMIT_REVERSE
1.5
Switch leakage current
ISW_LKG
0.01
1
µA
HS switch on resistance
RON_HS
90
155
mΩ
LS switch on resistance
RON_LS
80
145
mΩ
5
10
15
µA
0.9
1.05
1.2
V
Soft-start current
ISS
EN rising threshold
VSS = 0.8V
VEN_RISING
EN threshold hysteresis
VEN_HYS
PG rising threshold (VFB/VREF)
PGRISING
PG falling threshold (VFB/VREF)
PGFALLING
PG deglitch timer
TPG_DEGLITCH
PG output voltage low
VPG_LOW
VCC regulator
120
mV
VFB rising
85
90
95
VFB falling
105
110
115
VFB falling
79
84
89
%
VFB rising
113.5
118.5
123.5
%
PG from low to high
30
PG from high to low
50
ISINK = 2mA
0.2
VCC
VCC load regulation
Thermal shutdown
VBST - VSW = 5V
A
µs
µs
0.4
5
ICC = 5mA
(4)
Thermal shutdown hysteresis
(4)
%
V
V
3
%
TSD
170
°C
TSD_HYS
20
°C
NOTE:
4) Not tested in production, guaranteed by design and characterization.
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL PERFORMANCE CHARACTERISTICS
VIN=12V, TA=-40°C to +125°C, unless otherwise noted
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN=12V, TA=-40°C to +125°C, unless otherwise noted
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN=12V, TA=-40°C to +125°C, unless otherwise noted
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN= 12V, VOUT= 3.3V, L= 10µH, FSW= 500kHz, AAM, TA=+25°C, unless otherwise noted
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN= 12V, VOUT= 3.3V, L= 10µH, FSW= 500kHz, AAM, TA=+25°C, unless otherwise noted
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN= 12V, VOUT= 3.3V, L= 10µH, FSW= 500kHz, AAM, TA=+25°C, unless otherwise noted
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN= 12V, VOUT= 3.3V, L= 10µH, FSW= 500kHz, AAM, TA=+25°C, unless otherwise noted
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN= 12V, VOUT= 3.3V, L= 10µH, FSW= 500kHz, AAM, TA=+25°C, unless otherwise noted
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
PIN FUNCTIONS
Pin #
Name
1
PHASE
2
VIN
3, 10
SW
4, 9
PGND
5
EN
6
SYNC
7
PG
8
BIAS
11
BST
12
VCC
13
AGND
Switch node. SW is the output of the internal power switch.
14
SS
15
FB
16
FREQ
MPQ4431 Rev. 1.0
3/21/2017
Description
Selectable in-phase or 180° out-of-phase of SYNC input. Drive PHASE high to be
in-phase. Drive PHASE low to be 180° out-of-phase.
Input supply. VIN supplies power to all of the internal control circuitries and the
power switch connected to SW. A decoupling capacitor to ground must be placed
close to VIN to minimize switching spikes.
Power ground. PGND is the reference ground of the power device and requires
careful consideration during PCB layout. For best results, connect PGND with copper
pours and vias.
Enable. Pull EN below the specified threshold to shut the chip down. Pull EN above
the specified threshold to enable the chip.
Synchronize. Apply a 350kHz to 2.5MHz clock signal to SYNC to synchronize the
internal oscillator frequency to the external clock. The external clock should be at
least 250kHz larger than the RFREQ set frequency. SYNC can also be used to select
forced continuous conduction mode (CCM) or advanced asynchronous mode (AAM).
Drive SYNC high before the chip starts up to choose forced CCM. Drive SYNC low or
leave SYNC floating to choose AAM.
Power good indicator. The output of PG is an open drain and goes high if the output
voltage is within ±10% of the nominal voltage.
External power supply for the internal regulator. Connect BIAS to an external
power supply (5V ≤ VBIAS ≤ 18V) to reduce power dissipation and increase efficiency.
Float BIAS or connect BIAS to ground if not used.
Bootstrap. BST is the positive power supply for the high-side MOSFET driver
connected to SW. Connect a bypass capacitor between BST and SW.
Internal bias supply. VCC supplies power to the internal control circuit and gate
drivers. A ≥1µF decoupling capacitor to ground is required close to VCC.
Analog ground. AGND is the reference ground of the logic circuit.
Soft-start input. Place an external capacitor from SS to AGND to set the soft-start
period. The MPQ4431 sources 10µA from SS to the soft-start capacitor during startup. As the SS voltage rises, the feedback threshold voltage increases to limit inrush
current during start-up.
Feedback input. Connect FB to the tap of an external resistor divider from the output
to AGND to set the output voltage. The feedback threshold voltage is 0.8V. Place the
resistor divider as close to FB as possible. Avoid placing vias on the FB traces.
Switching frequency program. Connect a resistor from FREQ to ground to set the
switching frequency.
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
BLOCK DIAGRAM
BIAS
VCC
VCC
VCC
Regulator
VIN
VCC
EN
Vref
Reference
FREQ
BST
Oscillator
PLL
SYNC
ISW
PHASE
PG
Logic
+
-
VFB
110%xVREF
+
-
90%xVREF
VFB
Error Amplifier
VREF
SS
FB
VFB
+
+
-
Control Logic,
OCP,
OTP,
BST Refresh
SW
VCC
VC
R1
460kΩ
C1
52pF
C2
0.2pF
Ireverse
PGND
AGND
Figure 1: Functional Block Diagram
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TIMING SEQUENCE
VIN
0
SW
0
EN
EN
Threshold
0
VCC
VCC
Threshol d
0
118.5% Vref
90% Vref
50% REF 84% Vref
Vo
110% Vref
SS
0
I L=I Li mit
IL
0
PG
30µs
50µs
30µs
50µs
30µs
0
Start-Up
N o r m al
N o r m al
OCP
OV
N o r m al
EN Shutdown
OC
Release
Figure 2: Time Sequence
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
OPERATION
The
MPQ4431
is
a
high-frequency,
synchronous, rectified, step-down, switch-mode
converter with integrated, internal, high-side
and low-side power MOSFETs. The MPQ4431
offers a very compact solution that achieves 1A
of continuous output current with excellent load
and line regulation over a wide 3.3V to 36V
input supply range.
The MPQ4431 features a switching frequency
programmable from 350kHz to 2.5MHz,
external soft start, power good indication, and
precision current limit. Its very low operational
quiescent current makes it suitable for batterypowered applications.
Pulse-Width Modulation (PWM) Control
At moderate to high output current, the
MPQ4431 operates in a fixed-frequency, peakcurrent-control mode to regulate the output
voltage. An internal clock initiates a pulse-width
modulation (PWM) cycle. At the rising edge of
the clock, the high-side power MOSFET (HSFET) is turned on, and the inductor current rises
linearly to provide energy to the load. The HSFET remains on until its current reaches the
value set by the COMP voltage (VCOMP), which
is the output of the internal error amplifier. If the
current in the HS-FET does not reach VCOMP in
one PWM period, the HS-FET remains on,
saving a turn-off operation.
When the HS-FET is off, it remains off until the
next clock cycle begins. The low-side MOSFET
(LS-FET) is turned on immediately while the
inductor current flows through it.
To prevent shoot-through, a dead time is
inserted to prevent the HS-FET and LS-FET
from being on at the same time. For each turnon and -off in a switching cycle, the HS-FET
turns on or off with a minimum on and off time
limit.
Forced CCM and AAM
The
MPQ4431
has
selectable
forced
continuous conduction mode (CCM) and
advanced asynchronous mode (AAM) (see
Figure 3). Driving SYNC higher than its
specified threshold before the chip starts up
forces the device into CCM with a fixed
frequency, regardless of the output load current.
MPQ4431 Rev. 1.0
3/21/2017
Connect SYNC to VCC if there is no additional
power supply available to pull SYNC high
before the chip starts up.
Once the device is in CCM, the pull-up at SYNC
can be removed, and SYNC can be used to
synchronize switching. The advantage of CCM
is the controllable frequency and smaller output
ripple, but it also has low efficiency at light load.
Driving SYNC below its specified threshold or
leaving SYNC floating before the chip starts up
enables AAM power-save mode. The MPQ4431
first enters non-synchronous operation for as
long as the inductor current approaches zero at
light load. If the load is further decreased or is
at no load, then VCOMP is below the internally set
AAM value (VAAM). The MPQ4431 then enters
sleep mode, which consumes very low
quiescent current to further improve light-load
efficiency.
In sleep mode, the internal clock is blocked first,
so the MPQ4431 skips some pulses. Since the
FB voltage (VFB) is lower than the internal 0.8V
reference (VREF) at this time, VCOMP ramps up
until it crosses over VAAM. Then the internal
clock is reset and the crossover time is taken as
the benchmark of the next clock. This control
scheme helps achieve high efficiency by scaling
down the frequency to reduce the switching and
gate driver losses during light-load or no-load
conditions.
When the output current increases from lightload condition, VCOMP becomes larger, and the
switching frequency increases. If the DC value
of VCOMP exceeds VAAM, the operation mode
resumes discontinuous conduction mode (DCM)
or CCM, which have a constant switching
frequency.
Inductor
Current
Inductor
Current
Forced CCM
AAM
t
t
Load
Decreased
Load
t Decreased
t
t
t
Figure 3: Forced CCM and AAM
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
Error Amplifier (EA)
The error amplifier (EA) compares VFB with VREF
and outputs a current proportional to the
difference between the two. This output current
then charges or discharges the internal
compensation network to form VCOMP, which
controls the power MOSFET current. The
optimized internal compensation network
minimizes the external component count and
simplifies the control loop design.
Internal Regulator and BIAS
Most of the internal circuitry is powered on by
the 5V internal regulator. This regulator takes
the VIN input and operates in the full VIN range.
When VIN exceeds 5V, the output of the
regulator is in full regulation. When VIN falls
below 5V, the output decreases following VIN.
A decoupling ceramic capacitor ≥1µF is needed
close to VCC.
For better thermal performance, connect BIAS
to an external power supply between 5V and
18V. The BIAS supply overrides VIN to power
the internal regulator. Using the BIAS supply
allows VCC to be derived from a high-efficiency
external source, such as VOUT. Float BIAS or
connect BIAS to ground if it is not being used.
Under-Voltage Lockout (UVLO)
Under-voltage lockout (UVLO) protects the chip
from operating at an insufficient supply voltage.
The UVLO comparator monitors the output
voltage of the internal regulator (VCC). The
UVLO rising threshold is about 2.8V with a
150mV hysteresis.
Enable (EN) Control
EN is a digital control pin that turns the
regulator on and off. When EN is pulled below
its threshold voltage, the chip is put into the
lowest shutdown current mode. Pulling EN
above its threshold voltage turns on the part.
Do not float EN.
Power Good (PG) Indicator
The MPQ4431 has a power good (PG)
indicator. PG is the open drain of a MOSFET
and should be connected to VCC or another
voltage source through a resistor (e.g.: 100kΩ).
In the presence of an input voltage, the
MOSFET turns on so that PG is pulled low
before SS is ready. When the regulator output
MPQ4431 Rev. 1.0
3/21/2017
PRELIMINARY SPEC
is within ±10% of its nominal output, the PG
output is pulled high after a delay, typically
30μs. When the output voltage moves outside
of this range with a hysteresis, the PG output is
pulled low with a 50μs delay to indicate a failure
output status.
Programmable Frequency
The oscillating frequency of the MPQ4431 can
be programmed either by an external frequency
resistor (RFREQ) or by a logic level synchronous
clock. The frequency resistor should be located
between FREQ and ground as close as to the
device as possible.
The value of RFREQ can be estimated with
Equation (1):
RFREQ (kΩ) 
170000
fSW1.11(kHz)
(1)
The calculated resistance may need fine-tuning
during the bench test.
FREQ is not allowed to be floated, even if an
external SYNC clock is added.
SYNC and PHASE
The internal oscillator frequency can be
synchronized to an external clock ranging from
350kHz up to 2.5MHz through SYNC. The
external clock should be at least 250kHz larger
than the RFREQ set frequency. Ensure that the
high amplitude of the SYNC clock is higher than
1.8V, and the low amplitude is lower than 0.4V.
There is no pulse width requirement, but there
is always parasitic capacitance of the pad, so if
the pulse width is too short, a clear rising and
falling edge may not be seen due to the
parasitic capacitance. A pulse longer than
100ns is recommended in application.
PHASE is used when two or more MPQ4431
devices are in parallel with the same SYNC
clock. Pulling PHASE high forces the device to
operate in-phase of the SYNC clock. Pulling
PHASE low forces the device to be 180° out-ofphase of the SYNC clock. By setting different
voltages for PHASE, two devices can operate
180° out-of-phase to reduce the total input
current ripple so a smaller input bypass
capacitor can be used (see Figure 4). The
PHASE rising threshold is about 2.5V with a
400mV hysteresis.
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
SW1: Phase high
SW2: Phase low
SW1, 2 has a 180o phase shift
SYNC
CLK
SW1
SW2
t
Figure 4: In-Phase and 180° Out-of-Phase
Soft Start (SS)
Soft start (SS) is implemented to prevent the
converter output voltage from overshooting
during start-up. When the chip starts up, an
internal current source begins charging the
external soft-start capacitor. When the soft-start
voltage (VSS) is lower than the internal
reference (VREF), VSS overrides VREF, so the
error amplifier uses VSS as the reference. When
VSS is higher than VREF, the error amplifier uses
VREF as the reference.
The soft-start time (tSS) set by the external SS
capacitor can be calculated with Equation (2):
t SS (ms) 
CSS (nF)  VREF (V)
ISS (A)
(2)
Where CSS is the external SS capacitor, VREF is
0.8V, and ISS is the internal 10μA SS charge
current.
SS can be used for tracking and sequencing.
Pre-Bias Start-Up
At start-up, if VFB is higher than VSS, which
means the output has a pre-bias voltage,
neither the HS-FET nor the LS-FET are turned
on until VSS is higher than VFB.
Over-Current Protection (OCP) and Hiccup
The MPQ4431 has cycle-by-cycle peak currentlimit protection with valley-current detection and
hiccup mode.
The power MOSFET current is accurately
sensed via a current sense MOSFET. It is then
fed to the high-speed current comparator for
current-mode control purposes. During the HSFET on state, if the sensed current exceeds the
peak current limit value set by the COMP highclamp voltage, the HS-FET turns off
MPQ4431 Rev. 1.0
3/21/2017
PRELIMINARY SPEC
immediately. Then the LS-FET turns on to
discharge the energy, and the inductor current
decreases. The HS-FET remains off unless the
inductor valley current is lower than a certain
current threshold (valley current limit), even
though the internal clock pulses high. If the
inductor current does not drop below the valley
current limit when the internal clock pulses high,
the HS-FET misses the clock, and the switching
frequency decreases to half the nominal value.
Both the peak and valley current limits assist in
keeping the inductor current from running away
during an overload or short-circuit condition.
When the output is shorted to ground, causing
the output voltage to drop below 55% of its
nominal output, the peak current limit is kicked,
and the device considers this to be an output
dead short and triggers hiccup mode
immediately to restart the part periodically.
In hiccup mode, the MPQ4431 disables its
output power stage and discharges the softstart capacitor slowly. The MPQ4431 restarts
with a full soft start when the soft-start capacitor
is fully discharged. If the short-circuit condition
still remains after the soft start ends, the device
repeats this operation until the fault is removed
and output returns to the regulation level. This
protection mode reduces the average short
circuit current greatly to alleviate thermal issues
and protect the regulator.
Floating Driver and Bootstrap Charging
A 0.1μF to 1μF external, ceramic, bootstrap
capacitor powers the floating power MOSFET
driver. The floating driver has its own UVLO
protection with a rising threshold of 2.5V and
hysteresis of 200mV.
The bootstrap capacitor voltage is charged to
~5V from VCC through a PMOS pass transistor
when the LS-FET is on.
At a high duty cycle operation or sleep mode
condition, the time period available to the
bootstrap charging is less, so the bootstrap
capacitor may not be charged sufficiently. In
case the external circuit does not have
sufficient voltage or time to charge the
bootstrap capacitor, extra external circuitry can
be used to ensure that the bootstrap voltage is
in the normal operation region.
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18
MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
PRELIMINARY SPEC
BST Refresh
To improve dropout, the MPQ4431 is designed
to operate at close to 100% duty cycle for as
long as the BST to SW voltage is greater than
2.5V. When the voltage from BST to SW drops
below 2.5V, the HS-FET is turned off using a
UVLO circuit, which forces the LS-FET on to
refresh the charge on the BST capacitor.
Since the supply current sourced from the BST
capacitor is low, the HS-FET can remain on for
more switching cycles than are required to
refresh the capacitor, making the effective duty
cycle of the switching regulator high.
The effective duty cycle during the dropout of
the regulator is mainly influenced by the voltage
drops across the HS-FET, LS-FET, inductor
resistance, and printed circuit board resistance.
Thermal Shutdown
Thermal shutdown is implemented to prevent
the chip from running away thermally. When the
silicon die temperature exceeds its upper
threshold, the power MOSFETs shut down.
When the temperature drops below its lower
threshold, the chip is enabled again.
MPQ4431 Rev. 1.0
3/21/2017
Start-Up and Shutdown
If both VIN and EN exceed their appropriate
thresholds, the chip starts up. The reference
block starts first, generating a stable reference
voltage and current, and then the internal
regulator is enabled. The regulator provides a
stable supply for the rest of the circuitries.
While the internal supply rail is up, an internal
timer holds the power MOSFET off for about
50µs to blank start-up glitches. When the softstart block is enabled, it first holds its SS output
low to ensure that the rest of the circuitries are
ready and slowly ramps up.
Three events can shut down the chip: VIN low,
EN low, and thermal shutdown. During the
shutdown procedure, the signaling path is
blocked first to avoid any fault triggering. VCOMP
and the internal supply rail are then pulled down.
The floating driver is not subject to this
shutdown command, but its charging path is
disabled.
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19
MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
APPLICATION INFORMATION
Setting the Output Voltage
The external resistor divider connected to FB
sets the output voltage (see Figure 5).
Since CIN absorbs the input switching current, it
requires an adequate ripple current rating. The
RMS current in the input capacitor can be
estimated with Equation (4):
ICIN  ILOAD 
MPQ4431
RFB1
FB
ICIN 
Figure 5: Feedback Network
Choose RFB1 to be around 40kΩ. Then calculate
RFB2 with Equation (3):
R FB1
VOUT
1
0.8V
(3)
Table 1 lists the recommended feedback
resistor values for common output voltages.
Table 1: Resistor Selection for Common Output
Voltages
VOUT (V)
RFB1 (kΩ)
RFB2 (kΩ)
3.3
41.2 (1%)
13 (1%)
5
68.1 (1%)
13 (1%)
Selecting the Input Capacitor
The input current to the step-down converter is
discontinuous and therefore requires a
capacitor to supply AC current to the converter
while maintaining the DC input voltage. For the
best performance, use low ESR capacitors.
Ceramic capacitors with X5R or X7R dielectrics
are highly recommended because of their low
ESR and small temperature coefficients.
For most applications, use a 4.7µF to 10µF
capacitor. It is strongly recommended to use
another lower value capacitor (e.g.: 0.1µF) with
a small package size (0603) to absorb highfrequency switching noise. Place the smaller
capacitor as close to VIN and GND as possible.
MPQ4431 Rev. 1.0
3/21/2017
(4)
The worst-case condition occurs at VIN =
2VOUT, shown in Equation (5):
Vout
RFB2
R FB2 
VOUT
V
 (1  OUT )
VIN
VIN
ILOAD
2
(5)
For simplification, choose an input capacitor
with an RMS current rating greater than half of
the maximum load current.
The input capacitor can be electrolytic,
tantalum, or ceramic. When using electrolytic or
tantalum capacitors, add a small, high-quality
ceramic capacitor (e.g.: 0.1μF) as close to the
IC as possible. When using ceramic capacitors,
ensure that they have enough capacitance to
provide a sufficient charge to prevent excessive
voltage ripple at the input. The input voltage
ripple caused by the capacitance can be
estimated with Equation (6):
VIN 
ILOAD
V
V
 OUT  (1  OUT )
fSW  CIN VIN
VIN
(6)
Selecting the Output Capacitor
The output capacitor maintains the DC output
voltage. Use ceramic, tantalum, or low ESR
electrolytic capacitors. For best results, use low
ESR capacitors to keep the output voltage
ripple low. The output voltage ripple can be
estimated with Equation (7):
VOUT 
VOUT
V
1
 (1  OUT )  (RESR 
) (7)
fSW  L
VIN
8fSW  COUT
Where L is the inductor value, and RESR is the
equivalent series resistance (ESR) value of the
output capacitor.
For ceramic capacitors, the capacitance
dominates the impedance at the switching
frequency and causes the majority of the output
voltage ripple.
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
For simplification, the output voltage ripple can
be estimated with Equation (8):
VOUT 
VOUT
V
 (1  OUT ) (8)
8  fSW  L  COUT
VIN
2
PRELIMINARY SPEC
higher UVLO point, an external resistor divider
between VIN and EN can be used to achieve a
higher equivalent UVLO threshold (see Figure
6).
VIN
For tantalum or electrolytic capacitors, the ESR
dominates the impedance at the switching
frequency. For simplification, the output ripple
can be approximated with Equation (9):
VOUT 
VOUT
V
 (1  OUT )  RESR
fSW  L
VIN
(10)
Choose the inductor ripple current to be
approximately 30% of the maximum load
current. The maximum inductor peak current
can be calculated with Equation (11):
ILP
(11)
VIN UVLO Setting
The MPQ4431 has an internal, fixed, undervoltage lockout (UVLO) threshold. The rising
threshold is 2.8V, while the falling threshold is
about 2.65V. For applications that need a
MPQ4431 Rev. 1.0
3/21/2017
RDOWN
The UVLO threshold can be calculated with
Equation (12) and Equation (13):
INUVRISING  (1
RUP
)  VEN_RISING
RDOWN
(12)
INUVFALLING  (1 
RUP
)  VEN_FALLING
RDOWN
(13)
Where VEN_RISING is 1.05V, and VEN_FALLING is
0.93V.
External BST Diode and Resistor
An external BST diode can enhance the
efficiency of the regulator when the duty cycle is
high. A power supply between 2.5V and 5V can
be used to power the external bootstrap diode.
VCC or VOUT is recommended to be this power
supply in the circuit (see Figure 7).
VCC
RBST
Where ∆IL is the peak-to-peak inductor ripple
current.
VOUT
V
 ILOAD 
 (1  OUT )
2fSW  L
VIN
EN
Figure 6: Adjustable UVLO Using EN Divider
Selecting the Inductor
A 1µH to 10µH inductor with a DC current rating
at least 25% higher than the maximum load
current is recommended for most applications.
For higher efficiency, choose an inductor with a
lower DC resistance. A larger-value inductor
results in less ripple current and a lower output
ripple voltage, but also has a larger physical
size, higher series resistance, and lower
saturation current. A good rule for determining
the inductor value is to allow the inductor ripple
current to be approximately 30% of the
maximum load current. The inductance value
can then be calculated with Equation (10):
VOUT
V
 (1  OUT )
fSW  IL
VIN
R UP
(9)
The characteristics of the output capacitor also
affect the stability of the regulation system. The
MPQ4431 can be optimized for a wide range of
capacitance and ESR values.
L
VIN
External BST diode
IN4148
BST
VCC / VOUT
CBST
L
VOUT
SW
COUT
Figure 7: External Bootstrap Diode and Resistor
The recommended external BST diode is
IN4148, and the recommended BST capacitor
value is 0.1µF to 1μF. A resistor in series with
the BST capacitor (RBST) can reduce the SW
rising rate and voltage spikes. This helps
enhance EMI performance and reduce voltage
stress at a high VIN. A higher resistance is
better for SW spike reduction but compromises
efficiency. To make a tradeoff between EMI and
efficiency, a ≤20Ω RBST is recommended.
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21
MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
PCB Layout Guidelines (6)
Efficient PCB layout, especially for the input
capacitor placement, is critical for stable
operation. A four-layer layout is strongly
recommended to achieve better thermal
performance. For best results, refer to Figure 8
and follow the guidelines below.
1.
Use a large ground plane to connect to
PGND directly.
2.
Add vias near PGND if the bottom layer is a
ground plane.
3.
Ensure that the high-current paths at GND
and VIN have short, direct, and wide traces.
4.
Place the ceramic input capacitor, especially
the small package size (0603) input bypass
capacitor, as close to VIN and PGND as
possible to minimize high-frequency noise.
5.
Keep the connection of the input capacitor
and VIN as short and wide as possible.
6.
Place the VCC capacitor as close to VCC
and GND as possible.
7.
Route SW and BST away from sensitive
analog areas, such as FB.
8.
Place the feedback resistors close to the
chip to ensure that the trace which connects
to FB is as short as possible.
9.
Use multiple vias to connect the power
planes to the internal layers.
NOTE:
6) The recommended PCB layout is based on Figure 9 through
Figure 16.
Top Layer
Inner Layer 1
Inner Layer 2
Bottom Layer
Figure 8: Recommended PCB Layout
MPQ4431 Rev. 1.0
3/21/2017
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22
MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL APPLICATION CIRCUITS
U1
3.3V-36V
VIN
2
C1A
10μF
R1
100kΩ
GND
C1B
10μF
C1C C1D
0.1μF 0.1μF
5
EN
VIN
BST
11
C5
0.1μF
L1
MPQ4431
EN
SW
3, 10
3.3V/1A
10μH
R3
1MΩ
12
R5
100kΩ
VCC
FB
C4
1μF
GND
15
PG
SS
14
C3
4.7nF
6
SYNC
VOUT
R4
316kΩ
7
PG
C6
5pF
C2A C2B
22μF 22μF
SYNC
FREQ
R6
NS
16
R2
169kΩ
BIAS
PGND
AGND
13
PHASE
4, 9
1
PHASE
8
C7
NS
Figure 9: VOUT = 3.3V, IOUT = 1A, FSW = 500kHz
U1
VIN
3.3V-36V
GND
2
C1A
10μF
R1
100kΩ
C1B
10μF
C1C C1D
0.1μF 0.1μF
5
EN
VIN
BST
11
C5
0.1μF
L1
MPQ4431
EN
SW
3, 10
R3
41.2kΩ
12
R5
100kΩ
PG
VCC
FB
C4
1μF
C6
10pF
C2A C2B
22μF 22μF
VOUT
GND
15
R4
13kΩ
7
PG
SS
14
C3
4.7nF
SYNC
3.3V/1A
10μH
6
SYNC
FREQ
R6
NS
16
R2
169kΩ
PHASE
BIAS
PGND
AGND
13
1
4, 9
PHASE
8
C7
NS
Figure 10: VOUT = 3.3V, FSW = 500kHz for <100kΩ FB Divider Application
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL APPLICATION CIRCUITS (continued)
U1
VIN
3.3V-36V
2
C1B
10μF
C1A
10μF
R1
100kΩ
GND
C1C C1D
0.1μF 0.1μF
5
EN
VIN
11
BST
C5
0.1μF
L1
MPQ4431
EN
3, 10
SW
5V/1A
10μH
R3
1MΩ
12
VCC
PG
14
SS
C3
4.7nF
6
SYNC
GND
R4
191kΩ
7
PG
VOUT
15
FB
C4
1μF
R5
100kΩ
C6
5pF
C2A C2B
22μF 22μF
SYNC
R6
10Ω
16
FREQ
R2
169kΩ
8
BIAS
PGND
AGND
13
PHASE
4, 9
1
PHASE
C7
0.1µF
Figure 11: VOUT = 5V, FSW = 500kHz
U1
VIN
3.3V-36V
GND
2
C1A
10μF
R1
100kΩ
C1B
10μF
C1C C1D
0.1μF 0.1μF
5
EN
VIN
BST
11
C5
0.1μF
L1
MPQ4431
EN
SW
3, 10
R3
68.1kΩ
12
R5
100kΩ
PG
VCC
FB
C4
1μF
C6
10pF
C2A C2B
22μF 22μF
VOUT
GND
15
R4
13kΩ
7
PG
SS
14
C3
4.7nF
SYNC
5V/1A
10μH
6
SYNC
FREQ
R6
10Ω
16
R2
169kΩ
PHASE
BIAS
PGND
AGND
13
1
4, 9
PHASE
8
C7
0.1µF
Figure 12: VOUT = 5V, FSW = 500kHz for <100kΩ FB Divider Application
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL APPLICATION CIRCUITS (continued)
U1
VIN
3.3V-36V
2
C1A
10μF
R1
100kΩ
GND
C1B
10μF
VIN
C1C C1D
0.1μF 0.1μF
C5
0.1μF
L1
MPQ4431
5
EN
11
BST
EN
3, 10
SW
3.3V/1A
2.2μH
R3
1MΩ
12
R5
100kΩ
VCC
FB
C4
1μF
GND
15
PG
14
SS
C3
4.7nF
6
SYNC
C6
10pF
VOUT
R4
316kΩ
7
PG
C2A C2B
22μF 22μF
SYNC
FREQ
R6
NS
16
R2
33kΩ
1
8
BIAS
PGND
AGND
13
PHASE
4, 9
PHASE
C7
NS
Figure 13: VOUT = 3.3V, FSW = 2.2MHz
U1
VIN
3.3V-36V
GND
2
C1A
10μF
R1
100kΩ
C1B
10μF
C1C C1D
0.1μF 0.1μF
5
EN
VIN
BST
11
C5
0.1μF
L1
MPQ4431
EN
SW
3, 10
R3
41.2kΩ
12
R5
100kΩ
PG
VCC
FB
C4
1μF
C6
10pF
C2A C2B
22μF 22μF
VOUT
GND
15
R4
13kΩ
7
PG
SS
14
C3
4.7nF
SYNC
3.3V/1A
2.2μH
6
SYNC
FREQ
R6
NS
16
R2
33kΩ
PHASE
BIAS
PGND
AGND
13
1
4, 9
PHASE
8
C7
NS
Figure 14: VOUT = 3.3V, FSW = 2.2MHz for <100kΩ FB Divider Application
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
TYPICAL APPLICATION CIRCUITS (continued)
U1
VIN
3.3V-36V
2
C1A
10μF
R1
100kΩ
GND
C1B
10μF
VIN
C1C C1D
0.1μF 0.1μF
C5
0.1μF
L1
MPQ4431
5
EN
11
BST
EN
3, 10
SW
5V/1A
2.2μH
R3
1MΩ
12
R5
100kΩ
VCC
FB
C4
1μF
GND
15
PG
14
SS
C3
4.7nF
6
SYNC
C6
10pF
VOUT
R4
191kΩ
7
PG
C2A C2B
22μF 22μF
SYNC
FREQ
R6
10Ω
16
R2
33kΩ
1
8
BIAS
PGND
AGND
13
PHASE
4, 9
PHASE
C7
0.1µF
Figure 15: VOUT = 5V, FSW = 2.2MHz
U1
VIN
3.3V-36V
GND
2
C1A
10μF
R1
100kΩ
C1B
10μF
C1C C1D
0.1μF 0.1μF
5
EN
VIN
BST
11
C5
0.1μF
L1
MPQ4431
EN
SW
3, 10
R3
68.1kΩ
12
R5
100kΩ
PG
VCC
FB
C4
1μF
C6
10pF
C2A C2B
22μF 22μF
VOUT
GND
15
R4
13kΩ
7
PG
SS
14
C3
4.7nF
SYNC
5V/1A
2.2μH
6
SYNC
FREQ
R6
10Ω
16
R2
33kΩ
PHASE
BIAS
PGND
AGND
13
1
4, 9
PHASE
8
C7
0.1µF
Figure 16: VOUT = 5V, FSW = 2.2MHz for <100kΩ FB Divider Application
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
PRELIMINARY SPEC
PACKAGE INFORMATION
QFN-16 (3mmx4mm)
Non-Wettable Flank
PIN 1 ID
MARKING
PIN 1 ID
0.15x45°TYP.
PIN 1 ID
INDEX AREA
BOTTOM VIEW
TOP VIEW
SIDE VIEW
NOTE:
1) ALL DIMENSIONS ARE IN MILLIMETERS.
2) LEAD COPLANARITY SHALL BE 0.10
MILLIMETERS MAX.
3) JEDEC REFERENCE IS MO-220.
4) DRAWING IS NOT TO SCALE.
0.15x45°
RECOMMENDED LAND PATTERN
MPQ4431 Rev. 1.0
3/21/2017
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MPQ4431 – 36V, 1A, LOW IQ, SYNC, STEP-DOWN CONVERTER, AEC-Q100
PACKAGE INFORMATION (continued)
QFN-16 (3mmx4mm)
Wettable Flank
PIN 1 ID
MARKING
PIN 1 ID
0.15x45°TYP.
PIN 1 ID
INDEX AREA
TOP VIEW
BOTTOM VIEW
SIDE VIEW
SECTION A-A
NOTE:
1) THE LEAD SIDE IS WETTABLE.
2) ALL DIMENSIONS ARE IN MILLIMETERS.
3) LEAD COPLANARITY SHALL BE 0.08
MILLIMETERS MAX.
4) JEDEC REFERENCE IS MO-220.
5) DRAWING IS NOT TO SCALE.
0.15x45°
RECOMMENDED LAND PATTERN
NOTICE: The information in this document is subject to change without notice. Users should warrant and guarantee that third
party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not
assume any legal responsibility for any said applications.
MPQ4431 Rev. 1.0
3/21/2017
www.MonolithicPower.com
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
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