Infineon BAR64-03W Silicon pin diode Datasheet

BAR64...
Silicon PIN Diode
• High voltage current controlled RF resistor
for RF attenuator and switches
• Frequency range above 1 MHz up to 6 GHz
• Very low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.17 pF)
• Low forward resistance (typ. 2.1 Ω @ 10 mA)
• Very low signal distortion
• Pb-free (RoHS compliant) package
• Qualified according AEC Q1011)
BAR64-02EL
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
!
, !
, ,
Type
BAR64-02EL*
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
1*BAR64-02EL
BAR64-06
BAR64-06W
!
,
Package
TSLP-2-19
SC79
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
, ,
Configuration
single, leadless
single
single
series
series
common cathode
common cathode
common anode
common anode
LS(nH)
0.4
0.6
1.8
1.8
1.4
1.8
1.4
1.8
1.4
Marking
OE
O
blue 2
PPs
PPs
PRs
PRs
PSs
PSs
is not qualified according AEC Q101
1
2013-06-10
BAR64...
Maximum Ratings at T A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
150
V
Forward current
IF
100
mA
Total power dissipation
Ptot
Value
Unit
mW
BAR64-02EL, T S ≤ 135 °C
250
BAR64-02V, TS ≤ 125 °C
250
BAR64-03W, TS ≤ 25 °C
250
BAR64-04, -05, -06, TS ≤ 65 °C
250
BAR64-04W, -05W, -06W, TS ≤ 115 °C
250
150
Junction temperature
Tj
Operating temperature range
Top
-55 ... 125
Storage temperature
Tstg
-55 ... 150
°C
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
BAR64-02EL
≤ 60
BAR64-02V, -04W, -05W, -06W
≤ 140
BAR64-03W
≤ 370
BAR64-04, -05, -06
≤ 340
Unit
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
150
-
-
-
-
1.1
DC Characteristics
Breakdown voltage
V(BR)
V
I(BR) = 5 µA
Forward voltage
VF
IF = 50 mA
2
2013-06-10
BAR64...
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Diode capacitance
pF
CT
VR = 20 V, f = 1 MHz
-
0.23
0.35
VR = 0 V, f = 100 MHz
-
0.3
-
VR = 0 V, f = 1...1.8 GHz, BAR64-02EL
-
0.13
-
VR = 0 V, f = 1...1.8 GHz, all other
-
0.17
-
Reverse parallel resistance
kΩ
RP
VR = 0 V, f = 100 MHz
-
10
-
VR = 0 V, f = 1 GHz
-
4
-
VR = 0 V, f = 1.8 GHz
-
3
-
Forward resistance
Ω
rf
IF = 1 mA, f = 100 MHz
-
12.5
20
IF = 10 mA, f = 100 MHz
-
2.1
2.8
IF = 100 mA, f = 100 MHz
-
0.85
1.35
τ rr
-
1550
-
ns
I-region width
WI
-
50
-
µm
Insertion loss1)
IL
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
dB
IF = 3 mA, f = 1.8 GHz
-
0.32
-
IF = 5 mA, f = 1.8 GHz
-
0.23
-
IF = 10 mA, f = 1.8 GHz
-
0.16
-
VR = 0 V, f = 0.9 GHz
-
22
-
VR = 0 V, f = 1.8 GHz
-
17
-
VR = 0 V, f = 2.45 GHz
-
14.5
-
VR = 0 V, f = 5.6 GHz
-
8.5
-
Isolation1)
1BAR64-02EL
ISO
in series configuration, Z = 50 Ω
3
2013-06-10
BAR64...
Diode capacitance CT = ƒ (VR)
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
f = Parameter
10 4
0.7
KOhm
pF
0.5
Rp
CT
10 3
1 MHz
100 MHz
1 GHz
1.8 GHz
0.4
100 MHz
1 GHz
1.8 GHz
10 2
10 1
0.3
10 0
0.2
0.1
0
2
4
6
8
10
12
14
16
V
10 -1
0
20
5
10
15
20
25
V
30
VR
40
VR
Forward resistance rf = ƒ (IF)
Forward current IF = ƒ (VF)
f = 100MHz
TA = Parameter
10 3
10 0
A
Ohm
10 -1
10 2
IF
RF
10 -2
10 1
10 -3
-40 °C
25 °C
85 °C
125 °C
10 -4
10 0
10 -5
10 -1 -2
10
10
-1
10
0
10
1
mA 10
10 -6
0
2
IF
0.2
0.4
0.6
0.8
V
1.2
VF
4
2013-06-10
BAR64...
Intermodulation intercept point
Forward current IF = ƒ (TS )
IP3 = ƒ (IF ); f = Parameter
BAR64-02EL
10 2
120
mA
100
f=900MHz
90
f=1800MHz
IF
IP3
80
dBm
70
60
50
40
30
20
10
10
1
10
-1
10
0
mA
10
0
0
1
30
60
90
120
IF
165
TS
Forward current IF = ƒ (TS )
Forward current IF = ƒ (TS )
BAR64-02V
BAR64-04, BAR64-05, BAR64-06
120
120
mA
mA
100
100
90
90
80
80
IF
IF
°C
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
TS
15
30
45
60
75
90 105 120 °C
150
TS
5
2013-06-10
BAR64...
Forward current IF = ƒ (TS )
BAR64-04W, BAR64-05W, BAR64-06W
120
mA
100
90
IF
80
70
60
50
40
30
20
10
0
0
15
30
45
60
90 105 120 °C
75
150
TS
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR64-02EL
IFmax / IFDC = ƒ (t p)
BAR64-02EL
10 2
10 2
IFmax/IFDC
RthJS
K/W
10 1
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
0
10 -1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
6
2013-06-10
BAR64...
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR64-02V
IFmax / IFDC = ƒ (t p)
BAR64-02V
10
3
10 2
IFmax / IFDC
K/W
RthJS
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
-
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
tp
s
10
1
10
0
tp
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR64-04, BAR64-05, BAR64-06
IFmax / IFDC = ƒ (t p)
BAR64-04, BAR64-05, BAR64-06
10 3
10 2
IFmax/IFDC
K/W
RthJS
10 2
10 1
10 -1 -6
10
10
-5
10
-4
10
-3
10
-2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
-
s
10
10 0 -6
10
0
tP
10
-5
10
-4
10
-3
10
-2
s
tP
7
2013-06-10
BAR64...
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR64-04W, BAR64-05W, BAR64-06W
IFmax / IFDC = ƒ (t p)
BAR64-04W, BAR64-05W, BAR64-06W
3
10
10 2
IFmax/IFDC
K/W
RthJS
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
-
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
tP
s
10
1
tP
Insertion loss IL = -|S21|2 = ƒ(f)
Isolation ISO = -|S21 |2 = ƒ(f)
IF = Parameter
VR = Parameter
BAR64-02EL in series configuration, Z = 50Ω
BAR64-02EL in series configuration, Z = 50Ω
0
0
dB
dB
100 mA
|S21|2
|S21|2
-0.1
10 mA
-0.15
-0.2
-10
-15
5 mA
-0.25
-20
3 mA
-0.3
-25
-0.35
-0.4
0
1
2
3
4
GHz
-30
0.5
6
f
0V
1V
10 V
1.5
2.5
3.5
4.5
GHz
6.5
f
8
2013-06-10
Package SC79
9
BAR64...
2013-06-10
BAR64...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC75 1) ) CES-Code
Month 2 0 03
2 0 04
2005
2006
2 0 07
2008
2009
2010
2011
2012
2 0 13
2014
01
a
p
A
P
a
p
A
P
a
p
A
P
02
b
q
B
Q
b
q
B
Q
b
q
B
Q
03
c
r
C
R
c
r
C
R
c
r
C
R
04
d
s
D
S
d
s
D
S
d
s
D
S
05
e
t
E
T
e
t
E
T
e
t
E
T
06
f
u
F
U
f
u
F
U
f
u
F
U
07
g
v
G
V
g
v
G
V
g
v
G
V
08
h
x
H
X
h
x
H
X
h
x
H
X
09
j
y
J
Y
j
y
J
Y
j
y
J
Y
10
k
z
K
Z
k
z
K
Z
k
z
K
Z
11
l
2
L
4
l
2
L
4
l
2
L
4
12
n
3
N
5
n
3
N
5
n
3
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
10
2013-06-10
Package SOD323
11
BAR64...
2013-06-10
Package SOT23
BAR64...
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
12
2013-06-10
Package SOT323
BAR64...
Package Outline
0.9 ±0.1
2 ±0.2
0.3 +0.1
-0.05
0.1 MAX.
3x
0.1
M
0.1
A
1
2
1.25 ±0.1
0.1 MIN.
2.1 ±0.1
3
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
0.8
1.6
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
13
2013-06-10
Package TSLP-2-19
14
BAR64...
2013-06-10
BAR64...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
15
2013-06-10
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