Data Sheet Zener diode EDZV series Applications Constant voltage control Dimensions (Unit : mm) Land size figure (Unit : mm) 0.12±0.05 0.8±0.05 0.6 0.8 1.6±0.1 1.2±0.05 1.7 Features 1) Compact,2-pin mini-mold type for high-density mounting.(EMD2) 2) High reliability. 3) Can be mounted automatically, using chip mounter. EMD2 Structure 0.3±0.05 Construction Silicon epitaxial planar 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) EX. EDZV3.6B Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation P Junction temperature Tj Storage temperature Tstg Operating temperature Topr www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Limits 150 150 55 to 150 55 to 150 1/5 Unit mW °C °C °C 2011.10 - Rev.A Data Sheet EDZV series Electical characteristics (Ta=25°C) Symbol TYP. Zener voltage ：Vz(V) Operating resistance ：Zz(Ω) Rising operataing resistance ：Zz(Ω) Reverse current ： IR(A) MIN. MAX. Iz(mA) MAX. Iz(mA) MAX. Iz(mA) MAX. VR(V) EDZV 3.6B 3.600 3.845 5.0 100 5.0 1000 1.0 10.0 1.0 EDZV 3.9B 3.890 4.160 5.0 100 5.0 1000 1.0 5.0 1.0 EDZV 4.3B 4.170 4.430 5.0 100 5.0 1000 1.0 5.0 1.0 EDZV 4.7B 4.550 4.750 5.0 100 5.0 800 0.5 2.0 1.0 EDZV 5.1B 4.980 5.200 5.0 80 5.0 500 0.5 2.0 1.5 2.5 EDZV 5.6B 5.490 5.730 5.0 60 5.0 200 0.5 1.0 EDZV 6.2B 6.060 6.330 5.0 60 5.0 100 0.5 1.0 3.0 EDZV 6.8B 6.650 6.930 5.0 40 5.0 60 0.5 0.5 3.5 EDZV 7.5B 7.280 7.600 5.0 30 5.0 60 0.5 0.5 4.0 EDZV 8.2B 8.020 8.360 5.0 30 5.0 60 0.5 0.5 5.0 6.0 7.0 EDZV 9.1B 8.850 9.230 5.0 30 5.0 60 0.5 0.5 EDZV 10B 9.770 10.210 5.0 30 5.0 60 0.5 0.1 EDZV 11B 10.760 11.220 5.0 30 5.0 60 0.5 0.1 8.0 EDZV 12B 11.740 12.240 5.0 30 5.0 80 0.5 0.1 9.0 EDZV 13B 12.910 13.490 5.0 37 5.0 80 0.5 0.1 10.0 80 0.5 0.1 11.0 80 0.5 0.1 12.0 EDZV 15B 14.340 14.980 5.0 42 5.0 EDZV 16B 15.850 16.510 5.0 50 5.0 65 85 5.0 80 0.5 0.1 13.0 5.0 100 0.5 0.1 15.0 100 0.5 0.1 17.0 19.0 21.0 EDZV 18B 17.560 18.350 5.0 EDZV 20B 19.520 20.390 5.0 EDZV 22B 21.540 22.470 5.0 100 5.0 120 5.0 120 0.5 0.1 150 2.0 150 0.5 0.1 EDZV 24B 23.720 24.780 5.0 EDZV 27B 26.190 27.530 2.0 EDZV 30B 29.190 30.690 2.0 200 2.0 200 0.5 0.1 23.0 EDZV 33B 32.150 35.070 33.790 36.870 2.0 250 2.0 300 2.0 0.5 0.5 0.1 2.0 250 300 25.0 27.0 EDZV 36B 0.1 (1) The zener voltage(Vz) is measured 40ms after power is supplied. (2) The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current on the regulated current(Iz) MARKING (Type No.) TYPE TYPE NO. TYPE TYPE NO. EDZV 3.6B 6 2 EDZV 12B 2 5 EDZV 3.9B 7 2 EDZV 13B 3 5 EDZV 4.3B 8 2 EDZV 15B 4 5 EDZV 4.7B 9 2 EDZV 16B 5 5 EDZV 5.1B A2 EDZV 18B 6 5 EDZV 5.6B C2 EDZV 20B 7 5 EDZV 6.2B E2 EDZV 22B 8 5 EDZV 6.8B F 2 EDZV 24B 9 5 EDZV 7.5B H2 EDZV 27B A5 EDZV 8.2B J 2 EDZV 30B C5 EDZV 9.1B L 2 EDZV 33B E5 EDZV 10B 0 5 EDZV 36B F 5 EDZV 11B 1 5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Data Sheet EDZV series 10 ZENER CURRENT:Iz(mA) 1 0.1 4.7 7.5 5.1 5.6 4.3 0.01 6.8 8.2 3.9 9.1 10 6.2 11 3.6 12 15 13 16 18 24 22 20 33 30 27 36 0.001 0 5 10 15 20 25 30 35 40 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 1000 Input waveform REVERSE SURGE MAXIMUM POWER:PRSM(W) POWER DISSIPATION:Pd(mW) 200 150 100 50 t 1pulse 10 1 0.1 0 0 25 50 75 100 125 0.001 150 0.1 40 30 0.04 25 0.02 20 mV/°C 15 -0.02 10 -0.04 5 -0.06 0 -5 -0.08 20 30 10 100 Rth(j-a) Rth(j-c) 100 10 40 0.001 ZENER VOLTAGE：Vz(V) γz-Vz CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) 0.06 10 1 Mounted on epoxy board TEMP.COEFFICIENCE:γz(mV/°C) 35 0 0.1 1000 %/°C 0.08 0 0.01 TIME:t(ms) PRSM-TIME CHARACTERISTICS AMBIENT TEMPERATURE:Ta(°C) Pd-Ta CHARACTERISTICS TEMP.COEFFICIENCE:γz(%/°C) PRSM 100 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 3/5 2011.10 - Rev.A Data Sheet EDZV3.6B 10 10000 1 1000 REVERSE CURRENT:IR (nA) ZENER CURRENT:Iz(mA) Ta=125°C Ta=25°C Ta=75°C Ta=-25°C 0.1 0.01 100 10 Ta=125°C 1 0.1 Ta=75°C 0.01 0.001 Ta=25°C 0.001 0 1 2 3 4 5 0 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 0.5 1 4.0 100 f=1MHz Ta=25°C IZ=5mA n=30pcs ZENER VOLTAGE:Vz(Ｖ) 3.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1.5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 3.8 AVE:3.661V 3.7 3.6 1 3.5 0 0.2 0.4 0.6 0.8 1 Vz DISRESION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 65 REVERSE CURRENT:IR(nA) 190 Ta=25°C VR=1.0V n=30pcs 180 170 160 150 140 130 AVE:142.3nA 120 110 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 200 100 Ta=25°C f=1MHz VR=0V n=10pcs 64 63 62 61 60 59 AVE:61.36pF 58 57 56 55 IR DISRESION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ct DISRESION MAP 4/5 2011.10 - Rev.A Data Sheet EDZV3.6B 30 10000 No break at 30kV No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD [kV] DYNAMIC IMPEDANCE:Zz(Ω) 25 1000 100 20 AVE：15.5kV 15 10 5 0 10 0.1 1 10 C=200pF R=0Ω ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A