IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 12.19 (0.48) 11.18 (0.44) 30.40 (1.197) 29.90 (1.177) VDSS ID(cont) RDS(on) 200V 18A 0.18W 4.09 (0.161) 3.84 (0.151) 2 Pls 2 11.18 (0.440) 10.67 (0.420) FEATURES 1 • HERMETICALLY SEALED TO3 METAL PACKAGE 16.97 (0.668) 16.87 (0.664) TO3 METAL PACKAGE Pin 1 = Source • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE Pin 2 Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C 18A ID Continuous Drain Current @ Tcase = 100°C 11A IDM Pulsed Drain Current 72A PD Power Dissipation @ Tcase = 25°C Linear Derating Factor 125W 1.0W/°C TJ , Tstg Operating and Storage Temperature Range –55 to 150°C RqJC Thermal Resistance Junction to Case 1.0°C/W max. RqJA Thermal Resistance Junction to Ambient 30°C/W max. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 6/00 IRF240 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. 200 Reference to 25°C V 0.29 ID = 1mA V / °C Static Drain – Source On–State VGS = 10V ID = 11A 0.18 Resistance VGS = 10V ID = 18A 0.21 VDS = VGS ID = 250mA 2 VDS ³ 15V IDS = 11A 6.1 VGS = 0 VGS(th) Gate Threshold Voltage V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1300 Coss Output Capacitance VDS = 25V 400 Crss Reverse Transfer Capacitance f = 1MHz 130 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 18 ISM Pulse Source Current 72 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 18A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance Semelab plc. ID = 18A nA pF nC 32 60 ID = 18A 2.2 10.6 VDS = 0.5BVDSS 14 38 VDS = 0.5BVDSS nC 20 VDD = 100V 152 ID = 18A 58 RG = 9.1W IS = 18A W 4 gfs VGS = 10V Unit ns 67 TJ = 25°C VGS = 0 TJ = 25°C (from 6mm down drain lead pad to centre of die) 5.0 (from 6mm down source lead to centre of source bond pad) 13 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk A 1.5 V 500 ns 5.3 mC nH Prelim. 6/00