GeneSiC GBL04 High case dielectric strength Datasheet

GBL005 thru GBL04
Single Phase Glass Passivated
Silicon Bridge Rectifier
VRRM = 50 V - 400 V
IO = 4 A
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• This series is UL listed under the Recognized
• Glass passivated chip junction
GBL Package
• High case dielectric strength
• Typical IR less than 0,1 A
• High surge current capability
• Ideal for printed circuit boards
• Not ESD Sensitive
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads, solderable per MIL-STD-750 Method 2026.
Weight: 0.071 oz, 2.0 g
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
GBL005
GBL01
GBL02
GBL04
Unit
50
100
200
400
V
280
V
Repetitive peak reverse voltage
VRRM
RMS reverse voltage
VRMS
35
70
140
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
50
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
400
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Conditions
GBL005
GBL01
GBL02
GBL04
Unit
IO
Tc = 50 °C (Note 1)
Tc = 40 °C (Note 2)
4.0
3.0
4.0
3.0
4.0
3.0
4.0
3.0
A
Peak forward surge current
IFSM
tp = 8.3 ms, half sine
135
135
135
135
A
Maximum instantaneous forward
voltage drop per leg
VF
IF = 4 A
1.1
1.1
1.1
1.1
V
Maximum DC reverse current at
rated DC blocking voltage per leg
IR
Ta = 25 °C
5
5
5
5
500
75
500
75
500
75
500
75
A sec
95
95
95
95
pF
Parameter
Maximum average forward rectified
current
Symbol
2
Rating for fusing
It
Typical junction capacitance per
leg (Note 3)
Cj
Typical thermal resistance per leg
Ta = 125 °C
t < 8.3 ms
RΘJA
(Note 1)
22
22
22
22
RΘJL
(Note 2)
3.5
3.5
3.5
3.5
1
- Unit mounted on 3.0" x 3.0" x 0.11" (75 mm x 75 mm x 3 mm) Al plate
2
- Unit mounted on P.C.B. At 0.375" (9.5 mm) lead length and 0.5" x 0.5" (12 mm x
3
- Measured at 1.0 MHz and applied reverse bias of 4.0 V
www.genesicsemi.com/silicon-products/bridge-rectifiers/
1
μA
2
°C/W
GBL005 thru GBL04
www.genesicsemi.com/silicon-products/bridge-rectifiers/
2
GBL005 thru GBL04
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
Di
Dimensions
i
iin iinches
h and
d ((millimeters)
illi t )
www.genesicsemi.com/silicon-products/bridge-rectifiers/
3
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