NTR4501N, NVR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS 20 V RDS(on) Typ ID Max (Note 1) 70 mW @ 4.5 V 3.6 A 88 mW @ 2.5 V 3.1 A N−Channel Applications • Load/Power Switch for Portables • Load/Power Switch for Computing • DC−DC Conversion D G MAXIMUM RATINGS (TJ= 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V ID 3.2 A 2.4 A Continuous Drain Current (Note 1) Steady State Steady State Power Dissipation (Note 1) Pulsed Drain Current TA = 25°C TA = 85°C Steady State tp = 10 ms PD 1.25 W 10.0 A TJ, Tstg −55 to 150 °C Continuous Source Current (Body Diode) IS 1.6 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C THERMAL RESISTANCE RATINGS Parameter 3 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1 IDM Operating Junction and Storage Temperature S Symbol Max Unit Junction−to−Ambient (Note 1) RqJA 100 °C/W Junction−to−Ambient (Note 2) RqJA 300 xR1 MG G 2 SOT−23 CASE 318 STYLE 21 1 Gate 2 Source TR1 = Device Code for NTR4501N VR1 = Device Code for NVR4501N M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. Device Package Shipping† NTR4501NT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NVR4501NT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 October, 2016 − Rev. 15 1 Publication Order Number: NTR4501N/D NTR4501N, NVR4501N Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 mA 20 24.5 V 22 mV/°C OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V(BR)DSS/TJ IDSS VGS = 0 V TJ = 25°C 1.5 mA VDS = 16 V TJ = 85°C 10 mA ±100 nA IGSS VDS = 0 V, VGS = ±12 V VGS(TH) VGS = VDS, ID = 250 mA ON CHARACTERISTICS Gate Threshold Voltage (Note 3) Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.65 1.2 −2.3 V mV/°C VGS = 4.5 V, ID = 3.6 A 70 80 VGS = 2.5 V, ID = 3.1 A 88 105 VDS = 5.0 V, ID = 3.6 A 9 mW S CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 200 VGS = 0 V, f = 1.0 MHz, VDS = 10 V 80 pF 50 QG(TOT) 2.4 VGS = 4.5 V, VDS = 10 V, ID = 3.6 A 6.0 Gate−to−Source Gate Charge QGS 0.5 Gate−to−Drain Charge QGD 0.6 td(on) 6.5 13 12 24 12 24 3 6 0.8 1.2 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 W tf ns SOURCE−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Discharge Time Reverse Recovery Charge ta tb VGS = 0 V, ISD = 1.6 A V 7.1 VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.6 A QRR 5 1.9 3.0 3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ns nC NTR4501N, NVR4501N 8 VGS = 2.0 V T = 25°C J VGS = 10 V VGS = 2.2 V 6.0 5.0 VGS = 3.0 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 7.0 VGS = 1.8 V 4.0 3.0 VGS = 1.6 V 2.0 VGS = 1.4 V 1.0 VDS ≥ 10 V 7 6 5 4 3 2 TJ = −55°C VGS = 1.2 V 0 0 0 1 2 3 4 5 6 7 8 9 0.5 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = 3.2 A TJ = 25°C 0.20 0.15 0.10 2 4 3 5 6 0.10 TJ = 25°C VGS = 2.5 V 0.09 0.08 VGS = 4.5 V 0.07 0.06 0.05 2 3 4 5 6 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 1000 VGS = 0 V ID = 3.2 A VGS = 4.5 V 1.2 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1.4 1.0 0.8 0.6 −50 2.0 Figure 2. Transfer Characteristics 0.25 1 1.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics 0.05 TJ = 25°C TJ = 125°C 1 −25 0 25 50 75 100 125 TJ = 150°C 100 10 TJ = 100°C 1.0 150 2 TJ, JUNCTION TEMPERATURE (°C) 4 6 8 10 12 14 16 18 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage www.onsemi.com 3 20 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 300 250 Ciss 200 150 100 Coss 50 Crss 0 0 2.5 5 7.5 10 12.5 15 20 17.5 5.0 15 QT 4.0 12 VDS VGS 9 3.0 QGD QGS 2.0 6 3 1.0 TJ = 25°C ID = 3.2 A 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 QG, TOTAL GATE CHARGE (nC) DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 100 IS, SOURCE CURRENT (AMPS) 4 VDS = 10 V ID = 3.2 A VGS = 4.5 V td(off) tr 10 t, TIME (ns) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 350 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTR4501N, NVR4501N td(on) tf 1 10 3 2 1 0 0.3 0.1 1 VGS = 0 V TJ = 25°C 100 0.6 1.2 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current TRANSIENT THERMAL RESISTANCE, RqJA (°C/W) 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 1 0.01 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME, tp (s) Figure 11. Thermal Response www.onsemi.com 4 1 10 100 1000 NTR4501N, NVR4501N PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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