UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMBTA56L-AE3-R MMBTA56G-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-090,B MMBTA56 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4 V Collector Current - Continuous IC -500 mA 350 mW Total Device Dissipation(Note 1) PD 2.8 mW/℃ Derate Above 25℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. Device mounted on FR-4=1.6×1.6×0.06 in 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Junction to Ambient SYMBOL θJA MAX 357 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS DC Current Gain SYMBOL TEST CONDITIONS BVCEO IC=-1.0mA, IB=0 -80 BVEBO ICES ICBO IE=-100μA, Ic=0 VCE=-60V, IB=0 VCB=-80V, IE=0 -4 hFE IC=-10mA, VCE=-1V IC=-100mA, VCE=-1V IC=-100mA, IB=-10mA IC=-100mA, VCE=-1V Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter on Voltage VBE(ON) SMALL-SIGNAL CHARACTERISTICS IC=-10mA, VCE=-2V, Current Gain Bandwidth Product fT (Note2) f=100MHz Note 1: Pulse test: PW≤300μs, Duty Cycle≤2% 2: fT is defined as the frequency at which IhfeI extrapolates to unity. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V -0.1 -0.1 V μA μA -0.25 -1.2 V V 100 100 100 MHz 2 of 5 QW-R206-090,B MMBTA56 PNP SILICON TRANSISTOR SWITCHING TIME TEST CIRCUITS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R206-090,B MMBTA56 Capacitance, C (pF) Current-Gain Bandwidth Product, fT (MHz) TYPICAL CHARACTERISTICS 100 70 50 ts Active-Region Safe Operating Area -1.0K -700 -500 Collector Current, IC (mA) Time, t (ns) 300 200 Switching Time -300 -200 tf VCC=-40V 30 IC/IB=10 tr 20 IB1=IB2 TJ=25℃ td@VBE(off)=-0.5V 10 -5.0-7.0 -10 -20 -30 -50-70-100-200-300-500 Collector Current, IC (mA) 1.0ms TC=25℃ s 0µ 10 1.0K 700 500 1.0s -100 TA=25℃ -70 -50 MMBTA55 -30 -20 MMBTA56 Current Limit Thermal Limit Second Breakdown Limit -10 -1.0 -2.0-3.0-5.0 -7.0-10 -20-30 -50 -70-100 Collector-Emitter Voltage, VCE (V) Voltage, V DC Current Gain, hFE PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R206-090,B MMBTA56 Temperature Coefficient, RθVB (mV/℃) TYPICAL CHARACTERISTICS(Cont.) Collector-Emitter Voltage, VCE (V) PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R206-090,B