COMCHIP Low V F SMD Sch ottky Bar rier Rect ifier s SMD Diodes Specialist CDBM220L-G Thru. CDBM240L-G Reverse Voltage: 20 to 40 Volts Forward Current: 2.0 Amp RoHS Device Features Mini SMA -Ideal for surface mount applications. 0.154(3.9) 0.138(3.5) -Easy pick and place. 0.012(0.3) Typ. -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.071(1.8) 0.055(1.4) -Exceeds environmental standard MIL-S19500/228. -Low leakage current. 0.126(3.2) 0.110(2.8) Mechanical data -Case: Mini SMA/SOD-123, molded plastic. 0.067(1.7) 0.051(1.3) -Terminals: solderable per MIL-STD-750, method 2026. 0.035(0.9) Typ. 0.035(0.9) Typ. -Polarity: Color band denotes cathode end. Dimensions in inches and (millimeter) -Approx. weight: 0.04 grams Maximum Ratings and Electrical Characteristics Parameter Symbol CDBM220L-G CDBM240L-G Units V RRM 20 40 V VR 20 40 V Max. RMS voltage V RMS 14 28 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) I FSM 50 A Max. average forward current IO 2.0 A Max. instantaneous forward voltage at 2.0A VF Max. DC reverse current at T A =25 OC V RRM T A =100 OC IR 1.0 10 RθJA 70 CJ 160 T STG -55 to +150 O C TJ -55 to +125 O C Max. repetitive peak reverse voltage Continuous reverse voltage Max. thermal resistance, junction to ambient Diode junction capacitance Storage temperature Operating temperature 0.38 0.40 V mA O C/W pF REV:A Page 1 QW-BL008 Comchip Technology CO., LTD. COMCHIP Low V F SMD Sch ottky Bar rier Rect ifier s SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBM220L-G thru CDBM240L-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 10 10 F o r w a rd C u rren t (A) 100 R e v e r s e C u r rent (mA) 100 1 O T J =75 C C D BM 22 0L -G C D BM 24 0L -G 1 0.1 0.1 T J =25 OC, Pulse width=300μs O T J =25 C 0.01 0 20 40 60 80 100 120 0.01 0.1 140 0.3 Percent of Rated Peak Reverse Voltage (%) Fig.3 Junction Capacitance 0.7 0.9 1.1 1.3 1.5 Fig.4 Current Derating Curve 350 2.8 Average Forward Current (A) T J =25 OC f=1MHz and applied 4VDC reverse voltage 300 J u n c ti o n C apaci t ance (p F ) 0.5 Forward Voltage (V) 250 200 150 100 2.4 2.0 1.6 1.2 0.8 0.4 50 0 0.01 0 0.1 1 10 100 0 25 50 75 100 125 150 175 Ambient Temperature ( OC) Reverse Voltage (V) Fig.5 Non-repetitive Forward Surge Current 60 P e a k F o r w a r d S u r g e Cur r e n t (A ) O T J =25 C 8.3ms single half sine wave, JEDEC method 50 40 30 20 10 0 1 10 100 Number of Cycles at 60Hz REV:A Page 2 QW-BL008 Comchip Technology CO., LTD.