CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 1/14 N- AND P-Channel Enhancement Mode MOSFET MTC7540BDH8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit BVDSS ID@VGS=4.5V(-4.5V), TA=25°C ID@VGS=4.5V(-4.5V), TA=70°C ID@VGS=4.5V(-4.5V), TC=25°C ID@VGS=4.5V(-4.5V), TC=100°C RDSON(typ)@VGS=4.5V(-4.5V) RDSON(typ)@VGS=2.5V(-2.5V) N-CH 14V 10.6A 8.5A 25.8A 16.3A 15.7mΩ 24.4mΩ P-CH -14V -9.5A -7.6A -23.0A -14.6A 21.3mΩ 32.2mΩ Outline MTC7540BDH8 DFN5×6 Pin 1 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTC7540BDH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating & halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTC7540BDH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 2/14 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Gate-Source Voltage Limits N-channel P-channel 10s steady 10s steady 14 -14 VGS TA=25 °C, VGS=4.5V (-4.5V) IDSM Continuous Drain Current TA=70 °C, VGS=4.5V (-4.5V) TC=25 °C, VGS=4.5V (-4.5V) ID TC=100 °C, VGS=4.5V (-4.5V) Pulsed Drain Current (Note 1 & 2) IDM TA=25 °C steady state TC=25 °C 6.8 -9.5 -6.1 8.5 5.4 -7.6 -4.9 25.8 -23 16.3 -14.6 27 -24 Operating Junction and Storage Temperature Range V A 1.4 (Note 3) 0.8 (Note 3) 21 PD TC=100 °C ±8 10.6 PDSM TA=70 °C steady state Power Dissipation ±8 Unit W 8.4 Tj; Tstg °C -55~+150 Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC Value 6 35 85 Unit t≤10s °C/W RθJA Steady state Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad. (Note 3) N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. 14 0.5 - 15.7 24.4 10 1.2 ±100 1 25 25 37 - - 390 109 95 6.8 21 25.8 11.2 - Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf MTC7540BDH8 S VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±8V, VDS=0V VDS=14V, VGS=0V VDS=10V, VGS=0V , Tj=55°C ID=11.8A, VGS=4.5V ID=9.8A, VGS=2.5V VDS=5V, ID=5A pF VDS=10V, VGS=0V, f=1MHz ns VDS=6V, ID=1A, VGS=4.5V, RG=6Ω V nA μA mΩ CYStek Product Specification CYStech Electronics Corp. *Qg *Qgs *Qgd Body Diode *IS - 5 0.7 1.4 - - - 2.9 12 1.2 - *ISM - - *VSD - *trr *Qrr - 0.83 10.2 1.7 nC A Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 3/14 VDS=10V, ID=7.8A, VGS=4.5V t≤10s V VGS=0V, IS=2.9A ns nC IF=2.9A dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions -14 -0.5 - 21.3 32.2 8.9 -1.2 ±100 -1 -25 28 48.5 - Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *IS - 1085 224 192 13.6 25.2 97 64.6 11.6 2.1 2.4 - - - *ISM - - *VSD - V VGS=0V, IS=-2.9A *trr *Qrr - -0.82 11 3 -2.9 -12 -1.2 - ns nC IF=-2.9A dIF/dt=100A/μs Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±8V, VDS=0V VDS=-12V, VGS=0V VDS=-10V, VGS=0V, Tj=55°C ID=-8.9A, VGS=-4.5V ID=-6.9A, VGS=-2.5V VDS=-5V, ID=-5A pF VDS=-10V, VGS=0V, f=1MHz ns VDS=-6V, ID=-1A, VGS=-4.5V, RG=6Ω nC VDS=-10V, ID=-8.9A, VGS=-4.5V V nA μA mΩ Dynamic A t≤10s *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC7540BDH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 4/14 Recommended Soldering Footprint unit : mm MTC7540BDH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 5/14 Recommended Stencil Design Note : 1. Stencil thickness 5 mil (0.127mm) 2. May need to be adjusted to specific requirements. MTC7540BDH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 6/14 Typical Characteristics : Q1( N-channel ) Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 27 1.4 3V BVDSS, Normalized Drain-Source Breakdown Voltage 24 ID, Drain Current (A) 21 5V, 4V,3.5V 18 2.5V 15 12 2V 9 6 1.2 1 0.8 ID=250μA, VGS=0V VGS=1.5V 3 0.6 0 0 1 -75 -50 -25 5 2 3 4 VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 100 R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 VSD, Source-Drain Voltage(V) VGS=2.5V 10 VGS=4.5V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 1 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(on), Normalized Static DrainSource On-State Resistance 50 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=11.8A 40 30 20 10 2 VGS=4.5V, ID=11.8A 1.6 1.2 0.8 0.4 RDSON@Tj=25°C : 15.7mΩ typ 0 0 0 MTC7540BDH8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 7/14 Typical Characteristics(Cont.) : Q1( N-channel) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 1 2 3 4 5 6 7 8 VDS, Drain-Source Voltage(V) 9 -75 -50 -25 10 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 5 1 0.1 VDS=5V Pulsed Ta=25°C 0.01 0.001 4 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Gate Charge Characteristics 10 3 2 VDS=10V 1 ID=7.8A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 3 4 Qg, Total Gate Charge(nC) 5 6 8 100 ID, Maximum Drain Current(A) 100μs RDSON Limited 1ms 10 10ms 100ms 1 0.1 1 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 1s 10s TA=25°C, Tj=150°C VGS=4.5V, RθJA=85°C/W Single Pulse DC 0.01 0.01 MTC7540BDH8 7 6 5 4 3 TA=25°C VGS=4.5V RθJA=85 ° C/W 2 1 0 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 8/14 Typical Characteristics(Cont.) : Q1( N-channel) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 1000 Typical Transfer Characteristics 27 VDS=5V 24 TJ(MAX) =150°C TA=25°C RθJA=85°C/W ID, Drain Current(A) Power (W) 100 21 10 18 15 12 9 6 3 1 0.0001 0.001 0 0.01 0.1 1 Pulse Width(s) 10 100 1000 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=85°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTC7540BDH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 9/14 Typical Characteristics : Q2( P-channel) Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 24 5V,4V,3.5V -I D, Drain Current (A) -BVDSS, Normalized Drain-Source Breakdown Voltage 3V 21 18 15 2.5V 12 9 2V 6 3 -VGS=1.5V 1.2 1 0.8 -ID=250μA, VGS=0V 0.6 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 100 -VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 -VGS=2.5V -VGS=4.5V VGS=0V Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 0.2 10 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 2 4 6 8 -IDR, Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2 90 R DS(on), Normalized Static DrainSource On-State Resistance 100 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID=8.9A 80 70 60 50 40 30 1.8 1.6 1.4 1.2 1 0.8 20 0.6 10 0.4 0 MTC7540BDH8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -VGS=4.5V, -ID=8.9A RDSON@Tj=25°C : 21.3mΩ typ -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 10/14 Typical Characteristics(Cont.) : Q2(P-channel) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss Crss 1 2 3 4 5 6 7 8 -VDS, Drain-Source Voltage(V) 1.2 ID=-1mA 1 0.8 0.6 -ID=250μA 0.4 0.2 100 0 1.4 9 -75 -50 -25 10 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 5 -VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 10 1 0.1 -VDS=5V Pulsed Ta=25°C 4 3 2 VDS=-10V 1 ID=-8.9A 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 0 10 4 6 8 10 Qg, Total Gate Charge(nC) 12 14 8 100 100μs 1ms -I D, Maximum Drain Current(A) RDSON Limited 10 10ms 100ms 1 1s 10s 0.1 2 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area -I D, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, Tj=150°C VGS=-4.5V, RθJA=85°C/W Single Pulse DC MTC7540BDH8 6 5 4 3 TA=25°C -VGS=4.5V RθJA=85°C/W 2 1 0 0.01 0.01 7 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 11/14 Typical Characteristics(Cont.) : Q2(P-channel) Typical Transfer Characteristics Single Pulse Power Rating, Junction to Ambient (Note on page 2) 1000 24 VDS=-5V 21 TJ(MAX) =150°C TA=25°C RθJA=85°C/W - ID, Drain Current(A) 18 Power (W) 100 10 15 12 9 6 3 1 0.0001 0.001 0 0.01 0.1 1 Pulse Width(s) 10 100 1000 0 1 2 3 4 - VGS , Gate-Source Voltage(V) 5 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=85°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTC7540BDH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 12/14 Reel Dimension Carrier Tape Dimension Pin #1 MTC7540BDH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 13/14 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTC7540BDH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C088H8 Issued Date : 2016.09.09 Revised Date : 2016.11.07 Page No. : 14/14 DFN5×6 Dimension Marking: Device Name 7540B Date Code 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.80 1.00 0.00 0.05 0.35 0.49 0.254 REF 4.90 5.10 1.60 REF DIM A A1 b c D F Inches Min. Max. 0.031 0.039 0.000 0.002 0.014 0.019 0.010 REF 0.193 0.201 0.063 REF DIM E e H L1 G K Millimeters Min. Max. 5.70 5.90 1.27 BSC 5.95 6.20 0.10 0.18 0.60 REF 1.60 REF Inches Min. Max. 0.224 0.232 0.050 BSC 0.234 0.244 0.004 0.007 0.024 REF 0.063 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC7540BDH8 CYStek Product Specification