EFC6611R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2mΩ, 27A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. Features 2.5V drive 2kV ESD HBM Common-Drain Type ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance VSSS ELECTRICAL CONNECTION N-Channel 4, 6 Rg 5 Value 12 8 27 Unit V V A THERMAL RESISTANCE RATINGS Parameter Symbol 27A 6.3mΩ@ 2.5V Source Current (DC) Source Current (Pulse) A ISP 100 PW100s, duty cycle1% Total Dissipation PT Surface mounted on ceramic substrate 2.5 W 2 (5000mm 0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Junction to Ambient Surface mounted on ceramic substrate 2 (5000mm 0.8mm) 3.2mΩ@ 3.8V 4.4mΩ@ 3.1V SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Symbol VSSS VGSS IS IS Max 3.2mΩ@ 4.0V 12V Applications 1-Cell Lithium-ion Battery Charging and Discharging Switch Parameter Source to Source Voltage Gate to Source Voltage RSS(on) Max 3.2mΩ@ 4.5V Value RJA Unit 50 C/W Rg 2 Rg=200Ω 1, 3 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 CSP6, 1.77x3.54 / EFCP3517-6DGH-020 MARKING ML LOT No. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2016 March 2016 - Rev. 2 1 Publication Order Number : EFC6611R/D EFC6611R ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Parameter Source to Source Breakdown Voltage Zero-Gate Voltage Source Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Source to Source On-State Resistance Symbol Value Conditions min typ max V(BR)SSS ISSS IS=1mA, VGS=0V Test Circuit 1 VSS=10V, VGS=0V Test Circuit 1 IGSS VGS(th) gFS VGS=8V, VSS=0V VSS=6V, IS=1mA Test Circuit 3 VSS=6V, IS=3A Test Circuit 4 RSS(on)1 RSS(on)2 RSS(on)3 IS=5A, VGS=4.5V IS=5A, VGS=4.0V Test Circuit 5 Test Circuit 5 1.8 2.3 3.2 m 1.9 2.4 3.2 m IS=5A, VGS=3.8V Test Circuit 5 2.0 2.6 3.2 m RSS(on)4 RSS(on)5 IS=5A, VGS=3.1V Test Circuit 5 2.1 3.3 4.4 m IS=5A, VGS=2.5V Test Circuit 5 2.7 4.0 6.3 m Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg 12 Unit V Test Circuit 2 0.5 VSS=6V, VGS=4.5V, IS=27A Test Circuit 7 A 1 A 1.3 19 80 VSS=6V, VGS=4.5V, IS=3A Test Circuit 6 1 V S ns 570 ns 38,000 ns 17,700 ns 100 nC Forward Source to Source Voltage IS=3A, VGS=0V Test Circuit 8 0.75 1.2 V VF(S-S) Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 EFC6611R Test circuits are example of measuring FET1 side Test Circuit 2 IGSS Test Circuit 1 VSSS / ISSS S2 S2 G2 G2 A G1 VSS G1 A VGS S1 Test Circuit 3 VGS(th) S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. Test Circuit 4 gFS S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. G1 VGS G1 VSS VGS S1 VSS S1 Test Circuit 6 td(on), tr, td(off), tf Test Circuit 5 RSS(on) S2 S2 IS RL G2 G2 V V G1 G1 VGS When FET1 is measured, Gate and Source of FET2 are short-circuited. VSS S1 S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. PG Test Circuit 8 VF(S-S) Test Circuit 7 Qg S2 S2 IS A When FET1 is measured, Gate and Source of FET2 are short-circuited. G2 G2 G1 G1 V IG =1mA RL VGS=0V S1 S1 PG VSS When FET2 is measured, the position of FET1 and FET2 is switched. www.onsemi.com 3 When FET1 is measured,+4.5V is added to VGS of FET2. EFC6611R www.onsemi.com 4 EFC6611R www.onsemi.com 5 EFC6611R PACKAGE DIMENSIONS unit : mm CSP6, 1.77x3.54 / EFCP3517-6DGH-020 CASE 568AL ISSUE O E A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A b b1 D E e e2 L D PIN A1 REFERENCE 0.05 C 2X 0.05 C 2X TOP VIEW A 0.03 C RECOMMENDED SOLDERING FOOTPRINT* 0.03 C C SIDE VIEW e2 b 2X 1 e2 2 SEATING PLANE 2X 8X R0.125 4X 0.05 C A B PACKAGE OUTLINE 0.50 PITCH e 1 2.00 PITCH b1 5 6 DIMENSIONS: MILLIMETERS 4 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. L 1 : SOURCE1 1.25 0.25 e/2 3 0.03 C 4X MILLIMETERS MIN MAX 0.22 0.22 0.28 0.22 0.28 1.77 BSC 3.54 BSC 0.50 BSC 1.00 BSC 1.22 1.28 BOTTOM VIEW 2 : GATE1 3 : SOURCE 1 4 : SOURCE 2 5 : GATE2 6 : SOURCE 2 ORDERING INFORMATION Device EFC6611R-TF Marking ML Package CSP6, 1.77x3.54 / EFCP3517-6DGH-020 (Pb-Free / Halogen Free) Shipping (Qty / Packing) 5,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the EFC6611R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales for use except the designated application. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 6