MCC MPSA42 Npn silicon high voltage transistor 625mw Datasheet

MCC
MPSA42
THRU
omponents
20736 Marilla Street Chatsworth
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$ % !"#
TM
Micro Commercial Components
Features
MPSA43
NPN Silicon High
Through Hole Package
150oC Junction Temperature
Voltage Transistor
x
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
•
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
625mW
TO-92
A
Mechanical Data
E
Case: TO-92, Molded Plastic
Marking:
B
MPSA42 ----A42
MPSA43 ----MPSA43
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Symbol
Collector-Emitter Voltage MPSA42
VCEO
MPSA43
Collector-Base Voltage MPSA42
VCBO
MPSA43
MPSA42
Emitter-Base Voltage
VEBO
MPSA43
Collector Current(DC)
IC
Power Dissipation@T A=25oC
Pd
Power Dissipation@T C=25oC
Pd
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Case
Operating & Storage Temperature
R JA
R JC
Value
300
200
300
200
Unit
5.0
V
300
625
5.0
1.5
12
mA
mW
mW/oC
W
mW/oC
200
o
83.3
Tj, TSTG -55~150
C
V
V
D
C
C/W
o
C
E
G
DIMENSIONS
C/W
o
B
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.010
MAX
.190
.190
.590
.020
.160
.104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
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1 of 4
2008/02/01
MCC
MPSA42 thru MPSA43
TM
Micro Commercial Components
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
300
200
—
—
300
200
—
—
5.0
—
—
—
0.25
0.1
—
—
0.25
0.1
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
MPSA42
MPSA43
Collector – Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CBO
Vdc
MPSA42
MPSA43
Emitter – Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MPSA42
MPSA43
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MPSA42
MPSA43
Vdc
µAdc
ICBO
µAdc
IEBO
ON CHARACTERISTICS(1)
hFE
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
25
80
25
—
—
—
0.5
0.4
VBE(sat)
—
0.9
Vdc
fT
50
—
MHz
—
—
3.0
4.0
250
—
VCE(sat)
MPSA42
MPSA43
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5 Vdc, f = 30MHz)
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
300 s, Duty Cycle
Ccb
MPSA42
MPSA43
pF
2.0%.
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Revision: 7
2 of 4
2008/02/01
MCC
MPSA42 thru MPSA43
TM
Micro Commercial Components
120
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
100
80
25°C
60
40
–55°C
20
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
f T, CURRENT–GAIN — BANDWIDTH (MHz)
80
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
70
60
50
40
30
20
10
1.0
1000
Figure 2. Capacitance
TJ = 25°C
VCE = 20 V
f = 20 MHz
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 3. Current–Gain – Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ –55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ –55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ –55°C, VCE = 10 V
0.6
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. ”ON” Voltages
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Revision: 7
3 of 4
2008/02/01
MCC
TM
Micro Commercial Components
Ordering Information
Device
Packing
(Part Number)-AP
Tape&Reel;2Kpcs/Box
(Part Number)-BP
Bulk;1Kpcs/Bag
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Revision: 7
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2008/02/01
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