PROCESS CP147 Central Power Transistor TM Semiconductor Corp. NPN - Darlington Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 195 X 195 MILS Die Thickness 12 MILS Base Bonding Pad Area 29 X 29 MILS Emitter Bonding Pad Area 61 X 35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Ni/Au - Ni-6,000Å; Au-6,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 280 PRINCIPAL DEVICE TYPES MJ11012 2N6282 MJ11014 2N6283 MJ11016 2N6284 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1 -August 2002) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP147 Typical Electrical Characteristics R3 (1 -August 2002)